Quantum confinement is recognized to be an inherent property in low-dimensional structures.Traditionally,it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels.However...Quantum confinement is recognized to be an inherent property in low-dimensional structures.Traditionally,it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels.However,our previous research has revealed efficient carrier escape in low-dimensional structures,contradicting this conventional understanding.In this study,we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone.By accounting for all wave vectors,we obtain a certain distribution of carrier energy at each quantized energy level,giving rise to the energy subbands.These results enable carriers to escape from the well under the influence of an electric field.Additionally,we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport.Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands,discovering new physical phenomena,and designing novel devices with superior performance.展开更多
To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and ...To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum wells.The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra.The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed.Our study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.展开更多
Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures...Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.展开更多
Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS reco...Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.展开更多
Class III tight oil reservoirs have low porosity and permeability,which are often responsible for low production rates and limited recovery.Extensive repeated fracturing is a well-known technique to fix some of these ...Class III tight oil reservoirs have low porosity and permeability,which are often responsible for low production rates and limited recovery.Extensive repeated fracturing is a well-known technique to fix some of these issues.With such methods,existing fractures are refractured,and/or new fractures are created to facilitate communication with natural fractures.This study explored how different refracturing methods affect horizontal well fracture networks,with a special focus on morphology and related fluid flow changes.In particular,the study relied on the unconventional fracture model(UFM).The evolution of fracture morphology and flow field after the initial fracturing were analyzed accordingly.The simulation results indicated that increased formation energy and reduced reservoir stress differences can promote fracture expansion.It was shown that the length of the fracture network,the width of the fracture network,and the complexity of the fracture can be improved,the oil drainage area can be increased,the distance of oil and gas seepage can be reduced,and the production of a single well can be significantly increased.展开更多
Kinds of complex-structure wells can effectively improve production,which are widely used.However,in the process of drilling and completion,complex-structure wells with long drilling cycle and large exposed area of re...Kinds of complex-structure wells can effectively improve production,which are widely used.However,in the process of drilling and completion,complex-structure wells with long drilling cycle and large exposed area of reservoir can lead to the fact that reservoir near wellbore is more vulnerable to the working fluid invasion,resulting in more serious formation damage.In order to quantitatively describe the reservoir formation damage in the construction of complex-structure well,taking the inclined well section as the research object,the coordinate transformation method and conformal transformation method are given according to the flow characteristics of reservoir near wellbore in anisotropic reservoir.Then the local skin factor in orthogonal plane of wellbore is deduced.Considering the un-even distribution of local skin factor along the wellbore,the oscillation decreasing model and empirical equation model of damage zone radius distribution along the wellbore direction are established and then the total skin factor model of the whole well is superimposed to realize the reservoir damage evaluation of complex-structure wells.Combining the skin factor model with the production model,the production of complex-structure wells can be predicted more accurately.The two field application cases show that the accuracy of the model can be more than 90%,which can also fully reflect the invasion characteristics of drilling and completion fluid in any well section of complex-structure wells in anisotropic reservoir,so as to further provide guidance for the scientific establish-ment of reservoir production system.展开更多
Accurate diagnosis of fracture geometry and conductivity is of great challenge due to the complex morphology of volumetric fracture network. In this study, a DNN (deep neural network) model was proposed to predict fra...Accurate diagnosis of fracture geometry and conductivity is of great challenge due to the complex morphology of volumetric fracture network. In this study, a DNN (deep neural network) model was proposed to predict fracture parameters for the evaluation of the fracturing effects. Field experience and the law of fracture volume conservation were incorporated as physical constraints to improve the prediction accuracy due to small amount of data. A combined neural network was adopted to input both static geological and dynamic fracturing data. The structure of the DNN was optimized and the model was validated through k-fold cross-validation. Results indicate that this DNN model is capable of predicting the fracture parameters accurately with a low relative error of under 10% and good generalization ability. The adoptions of the combined neural network, physical constraints, and k-fold cross-validation improve the model performance. Specifically, the root-mean-square error (RMSE) of the model decreases by 71.9% and 56% respectively with the combined neural network as the input model and the consideration of physical constraints. The mean square error (MRE) of fracture parameters reduces by 75% because the k-fold cross-validation improves the rationality of data set dividing. The model based on the DNN with physical constraints proposed in this study provides foundations for the optimization of fracturing design and improves the efficiency of fracture diagnosis in tight oil and gas reservoirs.展开更多
Multiple fractured horizontal wells (MFHWs) currently are the only possible means of commercial production from the low and ultra-low permeability unconventional gas reservoirs. In early production time, flowback flui...Multiple fractured horizontal wells (MFHWs) currently are the only possible means of commercial production from the low and ultra-low permeability unconventional gas reservoirs. In early production time, flowback fluid, which constitutes of hydraulic water and gas flow within fractures, is collected and analyzed. Flowback analysis has been shown to be a useful tool to estimate key properties of the hydraulic fracture such as conductivity and pore volume. Until date, most tools of flowback analysis rely on empirical and approximate methods. This study presents an improved Green-function-based semi-analytical solution for performance analysis of horizontal gas wells during flowback and early production periods. The proposed solution is derived based on coupling the solutions of two domains: a rigorously derived Green’s function-based integral solution for single-phase gas flow in matrix, and a finite-difference, multiphase solution for gas–water two-phase flow in the fracture. The validity of proposed semi-analytical solution is verified by finely gridded numerical models built in a commercial simulator for a series of synthetic cases considering a variety of fluid and reservoir property combinations, as well as various different production constraints. Comparisons against available empirical and approximate methods are also provided for these cases.展开更多
The achievement of universal quantum computing critically relies on scalability.However,ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable...The achievement of universal quantum computing critically relies on scalability.However,ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy(E_(VS))across quantum dot arrays,which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin information.These E_(VS)fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells.In this study,employing atomistic pseudopotential calculations,we unveil a significant spectrum of E_(VS)even in the absence of such concentration fluctuations.This spectrum represents the lower limit of the wide range of E_(VS)observed in numerous Si/SiGe quantum devices.By constructing simplified interface atomic step models,we analytically demonstrate that the lower bound of the E_(VS)spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers——an inherent characteristic that has been previously overlooked.Additionally,we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E_(VS)by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface.Our findings provide valuable insights into the critical role of in-plane randomness in determining E_(VS)in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.展开更多
基金the National Natural Science Foundation of China(Grant Nos.61991441 and 62004218)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB01000000)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2021005).
文摘Quantum confinement is recognized to be an inherent property in low-dimensional structures.Traditionally,it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels.However,our previous research has revealed efficient carrier escape in low-dimensional structures,contradicting this conventional understanding.In this study,we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone.By accounting for all wave vectors,we obtain a certain distribution of carrier energy at each quantized energy level,giving rise to the energy subbands.These results enable carriers to escape from the well under the influence of an electric field.Additionally,we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport.Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands,discovering new physical phenomena,and designing novel devices with superior performance.
基金Project supported by the National Key R&D Program of China (Grant No. 2019YFA0708202)the National Natural Science Foundation of China (Grant Nos. 11974023, 52021006, 61974139, 12074369, and 12104017)+1 种基金the “2011 Program” from the Peking–Tsinghua–IOP Collaborative Innovation Center of Quantum Matterthe Youth Supporting Program of Institute of Semiconductors
文摘To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum wells.The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra.The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed.Our study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218)the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000)Youth Innovation Promotion Association Chinese Academy of Sciences (Grant No. 2021005)。
文摘Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region(corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.
基金conducted within the state assignment of the Ministry of Science and Higher Education for universities(Project No.FZRR-2023-0009).
文摘Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.
基金the China Research and Pilot Test on Key Technology of Efficient Production of Changqing Tight Oil(Grant No.2021DJ2202).
文摘Class III tight oil reservoirs have low porosity and permeability,which are often responsible for low production rates and limited recovery.Extensive repeated fracturing is a well-known technique to fix some of these issues.With such methods,existing fractures are refractured,and/or new fractures are created to facilitate communication with natural fractures.This study explored how different refracturing methods affect horizontal well fracture networks,with a special focus on morphology and related fluid flow changes.In particular,the study relied on the unconventional fracture model(UFM).The evolution of fracture morphology and flow field after the initial fracturing were analyzed accordingly.The simulation results indicated that increased formation energy and reduced reservoir stress differences can promote fracture expansion.It was shown that the length of the fracture network,the width of the fracture network,and the complexity of the fracture can be improved,the oil drainage area can be increased,the distance of oil and gas seepage can be reduced,and the production of a single well can be significantly increased.
基金supported by National Natural Science Foundation of China(Grant No.52004297 and Grant No.51991361)China Postdoctoral Science Foundation(Grant No.BX20200384)。
文摘Kinds of complex-structure wells can effectively improve production,which are widely used.However,in the process of drilling and completion,complex-structure wells with long drilling cycle and large exposed area of reservoir can lead to the fact that reservoir near wellbore is more vulnerable to the working fluid invasion,resulting in more serious formation damage.In order to quantitatively describe the reservoir formation damage in the construction of complex-structure well,taking the inclined well section as the research object,the coordinate transformation method and conformal transformation method are given according to the flow characteristics of reservoir near wellbore in anisotropic reservoir.Then the local skin factor in orthogonal plane of wellbore is deduced.Considering the un-even distribution of local skin factor along the wellbore,the oscillation decreasing model and empirical equation model of damage zone radius distribution along the wellbore direction are established and then the total skin factor model of the whole well is superimposed to realize the reservoir damage evaluation of complex-structure wells.Combining the skin factor model with the production model,the production of complex-structure wells can be predicted more accurately.The two field application cases show that the accuracy of the model can be more than 90%,which can also fully reflect the invasion characteristics of drilling and completion fluid in any well section of complex-structure wells in anisotropic reservoir,so as to further provide guidance for the scientific establish-ment of reservoir production system.
基金supported by the National Natural Science Foundation of China(Grant No.52174044,52004302)Science Foundation of China University of Petroleum,Beijing(No.ZX20200134,2462021YXZZ012)the Strategic Cooperation Technology Projects of CNPC and CUPB(ZLZX 2020-01-07).
文摘Accurate diagnosis of fracture geometry and conductivity is of great challenge due to the complex morphology of volumetric fracture network. In this study, a DNN (deep neural network) model was proposed to predict fracture parameters for the evaluation of the fracturing effects. Field experience and the law of fracture volume conservation were incorporated as physical constraints to improve the prediction accuracy due to small amount of data. A combined neural network was adopted to input both static geological and dynamic fracturing data. The structure of the DNN was optimized and the model was validated through k-fold cross-validation. Results indicate that this DNN model is capable of predicting the fracture parameters accurately with a low relative error of under 10% and good generalization ability. The adoptions of the combined neural network, physical constraints, and k-fold cross-validation improve the model performance. Specifically, the root-mean-square error (RMSE) of the model decreases by 71.9% and 56% respectively with the combined neural network as the input model and the consideration of physical constraints. The mean square error (MRE) of fracture parameters reduces by 75% because the k-fold cross-validation improves the rationality of data set dividing. The model based on the DNN with physical constraints proposed in this study provides foundations for the optimization of fracturing design and improves the efficiency of fracture diagnosis in tight oil and gas reservoirs.
基金support from National Natural Science Foundation of China(No.52174042)China University of Petroleum Beijing(No.2462021YXZZ011,No.PRP/indep-4-2113)for the completion of this study.
文摘Multiple fractured horizontal wells (MFHWs) currently are the only possible means of commercial production from the low and ultra-low permeability unconventional gas reservoirs. In early production time, flowback fluid, which constitutes of hydraulic water and gas flow within fractures, is collected and analyzed. Flowback analysis has been shown to be a useful tool to estimate key properties of the hydraulic fracture such as conductivity and pore volume. Until date, most tools of flowback analysis rely on empirical and approximate methods. This study presents an improved Green-function-based semi-analytical solution for performance analysis of horizontal gas wells during flowback and early production periods. The proposed solution is derived based on coupling the solutions of two domains: a rigorously derived Green’s function-based integral solution for single-phase gas flow in matrix, and a finite-difference, multiphase solution for gas–water two-phase flow in the fracture. The validity of proposed semi-analytical solution is verified by finely gridded numerical models built in a commercial simulator for a series of synthetic cases considering a variety of fluid and reservoir property combinations, as well as various different production constraints. Comparisons against available empirical and approximate methods are also provided for these cases.
基金Project supported by the National Science Fund for Distinguished Young Scholars(Grant No.11925407)the Basic Science Center Program of the National Natural Science Foundation of China(Grant No.61888102)+1 种基金the Key Research Program of Frontier Sciences of CAS(Grant No.ZDBS-LYJSC019)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-026)。
文摘The achievement of universal quantum computing critically relies on scalability.However,ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy(E_(VS))across quantum dot arrays,which impede the initialization of qubit systems comprising multiple spins and give rise to spin–valley entanglement resulting in the loss of spin information.These E_(VS)fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells.In this study,employing atomistic pseudopotential calculations,we unveil a significant spectrum of E_(VS)even in the absence of such concentration fluctuations.This spectrum represents the lower limit of the wide range of E_(VS)observed in numerous Si/SiGe quantum devices.By constructing simplified interface atomic step models,we analytically demonstrate that the lower bound of the E_(VS)spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers——an inherent characteristic that has been previously overlooked.Additionally,we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in E_(VS)by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface.Our findings provide valuable insights into the critical role of in-plane randomness in determining E_(VS)in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.
