Enhancement of Frster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices

Fluorescence/phosphorescence hybrid white organic light-emitting devices（WOLEDs） based on double emitting layers（EMLs） with high color stability are fabricated.The simplified EMLs consist of a non-doped blue thermally activated delayed fluorescence（TADF） layer using 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone（DMAC-DPS） and an ultrathin non-doped yellow phosphorescence layer employing bis[2-（4-tertbutylphenyl）benzothiazolato-N,C2＇]iridium（acetylacetonate）（（tbt）_2Ir（acac））.Two kinds of materials of 4,7-diphenyl-1,10-phenanthroline（Bphen） and 1,3,5-tris（2-Nphenylbenzimidazolyl） benzene（TPBi） are selected as the electron transporting layer（ETL）,and the thickness of yellow EML is adjusted to optimize device performance.The device based on a 0.3-nm-thick yellow EML and Bphen exhibits high color stability with a slight Commission International de l＇Eclairage（CIE） coordinates variation of（0.017,0.009） at a luminance ranging from 52 cd/m^2 to 6998 cd/m^2.The TPBi-based device yields a high efficiency with a maximum external quantum efficiency（EQE）,current efficiency,and power efficiency of 10%,21.1 cd/A,and 21.3 lm/W,respectively.The ultrathin yellow EML suppresses hole trapping and short-radius Dexter energy transfer,so that Forster energy transfer（FRET）from DMAC-DPS to（tbt）_2Ir（acac） is dominant,which is beneficial to keep the color stable.The employment of TPBi with higher triplet excited state effectively alleviates the triplet exciton quenching by ETL to improve device efficiency.

Bright White Organic Light-emitting Device Based on 1,2,3,4,5,6-Hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene

Organic light-emitting devices（OLEDs） with the structure of indium-tin-oxide（ITO）/N,N＇-bis-（1-naphthyl）-N,N＇-diphenyl-（1,1＇-biphenyl）-4,4＇-diamine（NPB）/2,9-dimenthyl-4,7-diphenyl-1,10-phenanthroline（BCP）/tris（8-hydroxyquinoline）aluminum（Alq3）/Mg：Ag or that of ITO/NPB/1,2,3,4,5,6-hexakis（9,9-diethyl-9H-fluoren-2-yl）benzene（HKEthFLYPh）/Alq3/Mg：Ag were studied.White light emission was achieved with the two devices when the thicknesses of BCP and HKEthFLYPh were 1.5 nm（device B） and 5 nm（device Ⅱ）,respectively.The obvious difference was that the EL spectrum of device Ⅱ was not sensitive to the thickness of HKEthFLYPh compared to that of BCP layer.Moreover,the maximum luminance of device Ⅱ was about 1000 cd/m^2 higher than that of device B at a forward bias of 15 V,and it exhibited a maximum power efficiency of 1.0 lm/W at 5.5 V,which is nearly twice that of device B.The performance of device Ⅱ using a novel star-shaped hexafluorenylbenzene organic material was improved compared with that of BCP.

Trifluoromethyl enable high-performance single-emitter white organic light-emitting devices based on quinazoline acceptor

Single-emitter white organic light-emitting diode(WOLED) based on small organic molecule exhibits great potential in simplifying fabrication process of WOLEDs. However, the design and synthesis of molecule for highly efficient single-emitter WOLED still remains a challenge. Herein, two asymmetric donor-acceptor-acceptor'(D-A-A') type molecule(PTZ-PQ-F and PTZ-PQ-CF3) are developed by employing trifluoromethyl(CF_(3)) or fluorine atom as secondary acceptor, which can exhibit white lighting with dual emission bands consisting of blue traditional fluorescence from quasi-axial(ax) conformer and orange thermally activated delayed fluorescence(TADF) from quasi-equatorial(eq) conformer. The introduction of CF_(3) into PTZ-PQ-CF3 greatly enhanced the photoluminescence quantum yield(PLQY) by suppressing the nonradiative deactivation. Owing to electron-inductive-effect of CF3, the “eq” conformer of PTZ-PQCF3 exhibits a much smaller ΔESTof 0.01 e V to realize more efficient reverse intersystem crossing(RISC)process, and then enhance the exciton utilization(nearly 100%) of the whole dual emission system. Consequently, single-emitter WOLEDs based on PTZ-PQ-CF3 show nearly standard white emission with EQE of 13.0% and CIE of(0.35, 0.36) in m CP host and show warm white emission with high EQE of 25.5%and CIE of(0.40, 0.47) in 35 Dcz PPy host, which are the best performance among reported single-emitter WOLEDs.

White organic light-emitting devices fabricated by spin-coating molecular materials

White organic light-emitting device (WOLEDs) employing molecular mixed host (MH) is demonstrated by spin-coating.The spin-coated film functions as light-emitting layer and hole transporting layer,with the former formed by spin-coating solution containing MH of NPB (N.N'-Bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine) and MADN (2-methyl-9,10-di(2-naphthyl) anthracene),blue dye (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and yellow dye (5,6,11,12-tetraphenylnaphacene).The performances of the devices made with different mixed ratio of MH are investigated.It is found that the device performances depends on the MH ratio,and under the optimal NPB:MADN ratio (60:40),the WOLEDs show a maximum luminance of 24 671 cd/m2 and a current efficiency of 5.8 cd/A for the practical luminance of 1000 cd/m2.The effect of MH ratio on device performances can be attributed to the difference of hole mobility between the NPB and MADN.

Highly Efficient White Organic Light-emitting Devices with Optimized Electron Transporting Layers

We fabricated three phosphorescent blue organic light-emitting devices based on blue phosphor of iri-dium（Ⅲ） bis[（4,6-difluorophenyl）-pyridinato-N,C2＇]（Firpic） with different electron transporting layer（ETL） materialsBy analyzing efficiency curves and spectral characteristics, the significant effect of ETL on many aspects of deviceperformance was demonstrated. With optimized ETL, the characteristics of devices, such as voltage and efficiencywere significantly improved. Combined with a yellow phosphor of iridium（Ⅲ） bis（4-phenylthieno[3,2-c]pyridinato-N,C2＇） acetylacetonate（PO-01）, phosphorescent white organic light-emitting devices（PhWOLEDs） were obtained.Then, with an aim to promote the performance of the PhWOLEDs~ a thin layer of 4,4＇,4＂-tri（N-carbazolyl）-triphenylamine（TCTA） was introduced between two light emission layers, and the diffusion of excitons was confined.The outperformance device fabricated with 4,7-diphenyl-l,10-phenanthroline（Bphen） as the electron transportinglayer exhibited a peak current efficiency of 36.6 cd/A, a peak power efficiency of 19.2 lm/W, and the InternationalCommission on Illumination coordinates（0.37, 0.46）.

Air-Stable Ultrabright Inverted Organic Light-Emitting Devices with Metal Ion-Chelated Polymer Injection Layer

Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.

Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

The efficiency of organic light-emitting devices （OLEDs） based on N,N＇-bis（1-naphthyl）-N,N＇-diphenyl-N,1＇- biphenyl-4,4＇-diamine （NPB） （the hole transport layer） and tris（8-hydroxyquinoline） aluminum （Alq3） （both emission and electron transport layers） is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device （without a LiF interlayer, 3.2 cd/A）. An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.

Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

Numerical model of multilayer organic light-emitting devices

A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc （20 nm）/NPD （40 nm）/Alq3 （60 nm）/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I-V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.

Negative capacitance in doped bi-layer organic light-emitting devices

This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance （NC） appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

Luminescent Enhancement of Heterostructure Organic Light-Emitting Devices Based on Aluminum Quinolines

High performance organic light-emitting devices （OLEDs） have been investigated by using fluorescent bis （2-methyl-8-quinolinolato）（para-phenylphenolato）aluminum（BAlq） as an emissive layer on the performance of multicolor devices consisting of N, N＇-bis-（1-naphthyl）-N,N＇diphenyl- 1,1＇-biphenyl-4,4＇- diamine （NPB） as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum （Alq3） as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.

High-contrast top-emitting organic light-emitting devices

In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni（30 nm）/MgF 2（62 nm）/ZnS（16 nm）/Ni（20 nm） and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A（at 62.3 mA/cm 2） together with a very stable chromaticity.The contrast ratio reaches 561：1 at an on-state brightness of 1000 cd/m^2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.

High-Efficiency Green Phosphorescent Organic Light-Emitting Diode Based on Simplified Device Structures

A high-efficiency green phosphorescent organic light emitting diode with a simplified structure is achieved that is free of a hole transport layer. The design of this kind of device structure not only saves the consumption of organic materials but also greatly reduces the structural heterogeneities and effectively facilitates the charge injection into the emissive layer. The resulting green phosphorescent organic light-emitting diodes （PHOLEDs） exhibit higher electroluminescent efficiency. The maximum external quantum efficiency and current efficiency reach 23.7% and 88 cd/A, respectively. Moreover the device demonstrates satisfactory stability, keeping 23.7% and 88cd/A, 22% and 82cd/A, respectively, at a luminance of 100 and 1000cd/m2. The working mechanism for achieving high efficiency based on such a simple device structure is discussed correspondingly. The improved charge carrier injection and transport balance are proved to prominently contribute to achieve the high efficiency and great stability at high luminance in the green PHOLEDs.

Green Light-Emitting Organic Electroluminescent Device with a New Fluorescent Dye Dispersed in Poly(N-vinylcarbazole) Emitter Layer

Double-layer organic electroluminescent devices have been constructed. A new fluorescent dye, 9,10-bis(phenylethynyl)anthracence, was chosen as the dopant which was molecularly dispersed in the polymer film, and green light was observed from the device with luminance of 130cd/m(2) at 17V.

Improvement of electron injection of organic light-emitting devices by inserting a thin aluminum layer into cesium carbonate injection layer

We investigate the electron injection effect of inserting a thin aluminum（Al） layer into cesium carbonate（Cs2CO3）injection layer. Two groups of organic light-emitting devices（OLEDs） are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device＇s maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.

Recombination Efficiency and Width in Bilayer Organic Light-emitting Devices

A bilayer model with ohmic anode contact and injection limited cathode contact has been proposed to calculate the recombination efficiency and recombination zone width of the device. The effects of the thickness of hole transport layer and the barriers of organic/organic interface on the combination efficiency and recombination width have been discussed. It is found that： （1） When the electrons are blocked fully and the holes are not blocked significantly at the organic/organic interface, for a given Lh/L, the recombination efficiency increases with increasing the applied voltage, but at a higher applied voltage, the recombination efficiency decreases with increasing Lh/L; （2） The recombination efficiency increases with increasing applied voltage and Hh＇, and when applied voltage and Hh＇ exceed some value, the recombination efficiency appears as a plateau; （3） The recombination width decreases with increasing the applied voltage and Lh/L. This model might explain the relative experiment phenomena.

Study on Microcavity Organic Light-emitting Devices Containing Negative Refractive Index Dielectric Layer

A new structure containing negative refractive index dielectric layer（NRlDL） is introduced into microcavity. The properties of the new mierocavity organic light-emitting devices（MOLEDs） are investigated. In the experiment, the transfer matrix method is adopted. The dependence of reflectance and transmittance on the refractive index and thickness of NRIDL are analyzed in detail. Compared with the electroluminescence spectra of non-NRIDL diodes, the line widths of the spectra of the MOLEDs are narrower and all the peaks enhance. The results show that the new structure is beneficial to improve the performance and reduce the thickness of microcavity devices.

Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene

We chose pentacene as a hole injection layer（HIL） to fabricate the high performance blue fluorescent organic lightemitting devices（OLEDs）. We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer（ETL） presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.

White Organic Light Emitting Devices Based on Multiple Emissive Nanolayers

In this paper,a white organic light-emitting device(WOLEDs) with multiple-emissive-layer structure has been fabricated.The device has a simple structure of indium tin oxide(ITO)/NPB(20 nm)//DPVBi(20 nm)/CDBP:x Ir(btp)2acac(10 nm)/Alq3(25 nm)/BCP(5 nm)/Cs F(1 nm)/Al(150 nm)(x= 0.15,2.5 and 3.0 wt%),where NPB and BCP are used as the hole-injecting layer,electron transporting and hole blocking layer,respectively.White light emission was realized in an OLED with 2.5% Ir(btp)2acac doping concentration.The device exhibits peak efficiency of 1.93 cd/A at 9 V and maximum brightness of 7005 cd/m^2 at 14 V.The Commission International de I'Eclairage(CIE)(1931) coordinates of white emission are well within the white zone,which moves from(0.35,0.33) to(0.26,0.30) when the applied voltage is varied from 5 V to 14 V.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.