An Adaptive-Bandwidth CMOS PLL with Low Jitter and a Wide Tuning Range

This paper presents a novel adaptive-bandwidth charge pump PLL with low jitter and a wide tuning range. With an adaptive bandwidth,the proposed PLL can scale its loop dynamics proportional to the output frequency and maintain optimal performance over its entire output range. In order to improve the jitter performance of the PLL,a matching tech- nique is employed in the charge pump,and a voltage-to-voltage converter is used to achieve a low gain VCO. The experimental chip was fabricated in a 0. 35μm CMOS process. The measured results show that the PLL has perfect jitter performance within its operating range from 200MHz to 1.1GHz.

A Fast Acquisition PLL with Wide Tuning Range

We present a design for an adaptive gain phase-locked loop （PLL） that features fast acquisition,low jitter,and wide tuning range. A dual-edge-triggered phase frequency detector （PFD） and a self-regulated voltage controlled oscillator （VCO） are employed in this design to realize the aforementioned properties. Measured results show that the experimental chip, implemented in a standard 0.5μm 5V CMOS logic process, has an acquisition time of about 150ns at 37% frequency variation and an output RMS jitter of 39ps at 640MHz.（dual-edge-triggered phase frequency detector）

A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

A fully integrated Ku-band voltage controlled oscillator （VCO） is presented in an InGaP/GaAs hetero- junction bipolar transistor （HBT） technology. To achieve the wide tuning range （TR）, the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.

Wideband tunable REC-DFB laser array using thin-film heaters on the submount

A wideband wavelength-tunable 4×5 distributed feedback(DFB)semiconductor laser array based on the reconstructionequivalent-chirp(REC)technique using a simple tuning scheme is demonstrated.It consists of 20 DFB lasers with 4×5matrix interleaving distributions,two-level cascaded Y-branch optical combiners,and one active semiconductor opticalamplifier(SOA),all in-series integrated on one chip.Unlike the traditional thermal-electric cooler(TEC)-based wavelength-tuning scheme,the tunable 4×5 REC-DFB laser array achieves a faster and broader continuous wavelength-tuningrange using TaN thin-film heaters integrated on the AlN submount.By changing the injection current of the TaN resistorfrom 0 to 190 mA,the proposed tunable laser achieves a wavelength-tuning range of∼2.5 nm per channel and a total tuningof over 50 nm.This study opens up new avenues for realizing cost-effective and wide-tuning-range semiconductor lasers.

Very long wave infrared quantum cascade detector based on modular band structure

The optoelectronic performance of quantum cascade detectors(QCDs)is highly sensitive to the design of the energy level structure,leading to the inability of a single structure to achieve broad wavelength tuning.To address this issue,we propose and demonstrate a modular concept for very long wave infrared(VLWIR)QCDs based on a miniband diagonal transition scheme.The modular design makes the wavelength tuning only need to be adjusted for the absorption quantum well module rather than for the whole active region.Theoretical simulation shows that the wavelength tuning range is 39.6 meV(~14–30μm).To prove the feasibility of the scheme,three samples with different absorption well widths were fabricated and characterized.At 10 K,the response wavelengths of the three QCDs are 14,16,and 18μm,respectively,corresponding to responsivities and detectivities exceeding 2 mA/W and 1×10^(10)Jones.