期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Design of small-area and high-efficiency DC-DC converter for 1 T SRAM
1
作者 LEE Jae-hyung 金丽妍 +4 位作者 余忆宁 JANG Ji-hye KIM Kwang-il HA Pan-bong KIM Young-hee 《Journal of Central South University》 SCIE EI CAS 2012年第2期417-423,共7页
The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display driver integrated circuits (ICs), which consists of positive word-line voltage (VpwL),... The direct current-direct current (DC-DC) converter is designed for 1 T static random access memory (SRAM) used in display driver integrated circuits (ICs), which consists of positive word-line voltage (VpwL), negative word-line voltage (VinyL) and half-VDD voltage (VHDo) generator. To generate a process voltage temperature (PVT)-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage (VCI) from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results. 展开更多
关键词 1 T-static random access memory direct current-direct current converter positive word-line voltage negative word-line voltage half- VDb generator
下载PDF
40/28纳米存储器IP技术综述
2
作者 陈宏铭 张昭勇 《中国集成电路》 2018年第4期31-36,共6页
本文介绍了28nm/40nm存储器I P的设计挑战及智原科技提供的相应解决方案。硅验证的结果也证明了有效性。这些技术包括:ROM设计裕度改进、SRAM读写辅助方案、在低VCC电压自适跟踪的检测裕度控制方案和在双端口SRAM中同时访问双端口时单... 本文介绍了28nm/40nm存储器I P的设计挑战及智原科技提供的相应解决方案。硅验证的结果也证明了有效性。这些技术包括:ROM设计裕度改进、SRAM读写辅助方案、在低VCC电压自适跟踪的检测裕度控制方案和在双端口SRAM中同时访问双端口时单元电流增强。所提出的方法都是对工艺参数波动容忍,适合编译器的有效解决方案并减少面积开销。 展开更多
关键词 静态随机存取存储器 负位线 半选择干扰 字线下驱动 升压字线
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部