The working frequency selection of the ZK30525 vibrating screen was studied using ANSYS. Integrating the dynamic performance simulation analysis of the vibrating screen structure, the variation laws of beams＇ vibrati...The working frequency selection of the ZK30525 vibrating screen was studied using ANSYS. Integrating the dynamic performance simulation analysis of the vibrating screen structure, the variation laws of beams＇ vibration displacements changing with different exciting frequencies were researched. These beams include six beams, with one discharging beam and one in-material beam. Results indicate that vibration displacements in the middle of these beams increase with the augmenta- tion of exciting frequency. When exciting frequency exceeds a certain value, there exists a flat change region for vibration displacement. According to vibrator characteristics, the vibrating screen＇s working frequency should be selected in the flat change region, and be far away from modal frequencies. The study provides theoretical guidance for the reasonable working frequency selection of the large-scale vibrating screen.展开更多
We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave...We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate（TM） GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.展开更多
文摘The working frequency selection of the ZK30525 vibrating screen was studied using ANSYS. Integrating the dynamic performance simulation analysis of the vibrating screen structure, the variation laws of beams＇ vibration displacements changing with different exciting frequencies were researched. These beams include six beams, with one discharging beam and one in-material beam. Results indicate that vibration displacements in the middle of these beams increase with the augmenta- tion of exciting frequency. When exciting frequency exceeds a certain value, there exists a flat change region for vibration displacement. According to vibrator characteristics, the vibrating screen＇s working frequency should be selected in the flat change region, and be far away from modal frequencies. The study provides theoretical guidance for the reasonable working frequency selection of the large-scale vibrating screen.
文摘We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I–V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate（TM） GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.
