基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一...基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构,降低匹配网络的Q值,通过带通匹配网络拓扑,实现了宽带匹配。测试结果表明,在28V的工作电压下,8～18GHz的频率内驱动放大器实现了输出功率大于30dBm,功率附加效率大于21%,功率增益大于15dB。芯片尺寸为:2.20mm×1.45mm。该芯片电路具有频带宽、效率高、尺寸小的特点,主要用于毫米波收发组件、无线通讯等领域,具有广泛的应用前景。展开更多
A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,bi...A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.展开更多
Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation o...Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.展开更多
文摘基于SiC衬底的0.25μm GaN HEMT工艺,设计了一款X～Ku波段宽带1W驱动放大器单片微波集成电路。设计使用了一种有源器件的大信号输出阻抗的等效RC模型验证了GaN HEMT工艺模型的准确性,并获得了不同尺寸的GaN HEMT的大信号输出阻抗。第一级管芯采用负反馈结构,降低匹配网络的Q值,通过带通匹配网络拓扑,实现了宽带匹配。测试结果表明,在28V的工作电压下,8～18GHz的频率内驱动放大器实现了输出功率大于30dBm,功率附加效率大于21%,功率增益大于15dB。芯片尺寸为:2.20mm×1.45mm。该芯片电路具有频带宽、效率高、尺寸小的特点,主要用于毫米波收发组件、无线通讯等领域,具有广泛的应用前景。
文摘A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor（PHEMT）.The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6～18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications.
文摘Monolithic GaAs pin diode single pole double throw （SPDT） switches based on the fabrication technology of IMECAS are designed,fabricated,and tested. These SPDT switches achieve an insertion loss of 1.5dB,isolation of 32dB, and input and output return losses over 10dB from 8 to 20GHz. The switch design uses 2.5μm thick I-region GaAs pin diodes and a series-shunt-shunt switch topology in each arm. These performance characteristics are measured at a normal bias setting of 1.3V,which corresponds to 7mA of series diode bias current.
