High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmos...High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.展开更多
Fresnel zone plates are the key optical elements for nanoscale focusing of X-ray beams with high spatial resolution. Conventional zone plates manufactured by planar nanotechnology processes are limited by the achievab...Fresnel zone plates are the key optical elements for nanoscale focusing of X-ray beams with high spatial resolution. Conventional zone plates manufactured by planar nanotechnology processes are limited by the achievable aspect ratios of their zone structures. Additionally, ultra-high resolution X-ray optics with high efficiency requires three-dimensional （3-D） shaped tilted zones. The combination of high spatial resolution and high diffraction efficiency is a fundamental problem in X-ray optics. Based on electrodynamical simulations, we find that the optimized zone plate profile for volume diffraction is given by zone structures with radially increasing tilt angles and decreasing zone heights. On-chip stacking permits the realization of such advanced 3-D profiles without significant loss of the maximum theoretical efficiency. We developed triple layer on-chip stacked zone plates with an overlay accuracy of sub-2 nm which fulfills the nanofabrication requirements. Efficiency measurements of on-chip stacked zone plates show significantly increased values compared to conventional zone plates.展开更多
Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of th...Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.展开更多
In December 2020, Chang’E-5(CE-5), China’s first lunar sample return mission, successfully collected samples totaling 1731 g from the northern Oceanus Procellarum. The landing site was located in a young mare plain,...In December 2020, Chang’E-5(CE-5), China’s first lunar sample return mission, successfully collected samples totaling 1731 g from the northern Oceanus Procellarum. The landing site was located in a young mare plain, a great distance from those of Apollo and Luna missions. These young mare basalts bear critical scientific significance as they could shed light on the nature of the lunar interior(composition and structure) as well as the recent volcanism on the Moon. In this article, we investigated a CE-5 basalt sample(CE5 C0000 YJYX065) using a combination of state-of-art techniques, including high resolution X-ray tomographic microscopy(HR-XTM), energy dispersive X-ray spectroscopy(EDS)-based scanning electron microscope(SEM), and electron probe microanalysis(EPMA) to reveal its 3 D petrology and minerology.Our results show that this sample has a fine-to medium-grained subophitic texture, with sparse olivine phenocrysts setting in the groundmass of pyroxene, plagioclase, ilmenite and trace amounts of other phases. It has an extremely high ilmenite modal abundance(17.8 vol%) and contains a significant amount(0.5 vol%) of Ca-phosphate grains. The mineral chemistry is in excellent agreement with that of Apollo and Luna high-Ti basalts. The major phase pyroxenes also display strong chemical zoning with compositions following the trends observed in Apollo high-Ti basalts. Based on current data, we came to the conclusion that CE5 C0000 YJYX065 is a high-Ti mare basalt with a rare earth element(REE) enriched signature. This provides a rigid ground-truth for the geological context at the CE-5 landing site and clarifies the ambiguity inferred from remote sensing surveys.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.U1732104)China Postdoctoral Science Foundation(Grant No.2017M611443)Shanghai STCSM2019-11-20 Grant,China(Grant No.19142202700)。
文摘High resolution Fresnel zone plates for nanoscale three-dimensional imaging of materials by both soft and hard x-rays are increasingly needed by the broad applications in nanoscience and nanotechnology.When the outmost zone-width is shrinking down to 50 nm or even below,patterning the zone plates with high aspect ratio by electron beam lithography still remains a challenge because of the proximity effect.The uneven charge distribution in the exposed resist is still frequently observed even after standard proximity effect correction(PEC),because of the large variety in the line width.This work develops a new strategy,nicknamed as local proximity effect correction(LPEC),efficiently modifying the deposited energy over the whole zone plate on the top of proximity effect correction.By this way,50 nm zone plates with the aspect ratio from 4:1 up to 15:1 and the duty cycle close to 0.5 have been fabricated.Their imaging capability in soft(1.3 keV)and hard(9 keV)x-ray,respectively,has been demonstrated in Shanghai Synchrotron Radiation Facility(SSRF)with the resolution of 50 nm.The local proximity effect correction developed in this work should also be generally significant for the generation of zone plates with high resolutions beyond 50 nm.
文摘Fresnel zone plates are the key optical elements for nanoscale focusing of X-ray beams with high spatial resolution. Conventional zone plates manufactured by planar nanotechnology processes are limited by the achievable aspect ratios of their zone structures. Additionally, ultra-high resolution X-ray optics with high efficiency requires three-dimensional （3-D） shaped tilted zones. The combination of high spatial resolution and high diffraction efficiency is a fundamental problem in X-ray optics. Based on electrodynamical simulations, we find that the optimized zone plate profile for volume diffraction is given by zone structures with radially increasing tilt angles and decreasing zone heights. On-chip stacking permits the realization of such advanced 3-D profiles without significant loss of the maximum theoretical efficiency. We developed triple layer on-chip stacked zone plates with an overlay accuracy of sub-2 nm which fulfills the nanofabrication requirements. Efficiency measurements of on-chip stacked zone plates show significantly increased values compared to conventional zone plates.
基金Project supported by the Fundamental Research Funds for the Central Universities(Grant Nos.FRF-BR-16-018A,FRF-TP-17-022A1,and FRF-TP-17-069A1)the National Natural Science Foundation of China(Grant Nos.61274134 and 51402064)+4 种基金USTB Start-up Program(Grant No.06105033)China Postdoctoral Science Foundation(Grant No.2018M631333)Beijing Natural Science Foundation(Grant Nos.2184112 and 4173077)Beijing Innovation and Research Base Fund(Grant No.Z161100005016095)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2015387)
文摘Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.
基金supported by the Strategic Priority Research Program of Chinese Academy of Sciences (XDB 41000000)the Civil Aerospace Pre-research Projects (D020202 and D020302)+2 种基金the National Natural Science Foundation of China (41773059, 41873076, 41803051, 41973060, 42073060, and 42173044)the National Key Research and Development Program of China (2021YFA0716100)the Minor Planet Foundation of China
文摘In December 2020, Chang’E-5(CE-5), China’s first lunar sample return mission, successfully collected samples totaling 1731 g from the northern Oceanus Procellarum. The landing site was located in a young mare plain, a great distance from those of Apollo and Luna missions. These young mare basalts bear critical scientific significance as they could shed light on the nature of the lunar interior(composition and structure) as well as the recent volcanism on the Moon. In this article, we investigated a CE-5 basalt sample(CE5 C0000 YJYX065) using a combination of state-of-art techniques, including high resolution X-ray tomographic microscopy(HR-XTM), energy dispersive X-ray spectroscopy(EDS)-based scanning electron microscope(SEM), and electron probe microanalysis(EPMA) to reveal its 3 D petrology and minerology.Our results show that this sample has a fine-to medium-grained subophitic texture, with sparse olivine phenocrysts setting in the groundmass of pyroxene, plagioclase, ilmenite and trace amounts of other phases. It has an extremely high ilmenite modal abundance(17.8 vol%) and contains a significant amount(0.5 vol%) of Ca-phosphate grains. The mineral chemistry is in excellent agreement with that of Apollo and Luna high-Ti basalts. The major phase pyroxenes also display strong chemical zoning with compositions following the trends observed in Apollo high-Ti basalts. Based on current data, we came to the conclusion that CE5 C0000 YJYX065 is a high-Ti mare basalt with a rare earth element(REE) enriched signature. This provides a rigid ground-truth for the geological context at the CE-5 landing site and clarifies the ambiguity inferred from remote sensing surveys.
