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STUDY OF THE INJURY OF THE Ar^+ INJECTION Si LAYER BY THE USE OF XRD AND ELLIPSOMETER 被引量:1
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作者 G.Q.Wang,F.F.Jiang and X.N.Wang Basic Lessons Department, Shengyang University, Shengyang 110044, China 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1999年第5期1033-1037,共5页
The Ar+ injection layer into silicon can be described as inhomogeneous absorption medium wafer. The distribution of the stress, strain, strain energy in the injury layer has been studied utilizing XRD. And the average... The Ar+ injection layer into silicon can be described as inhomogeneous absorption medium wafer. The distribution of the stress, strain, strain energy in the injury layer has been studied utilizing XRD. And the average ellipsometer is used here to investigate the optical constant and degree of injury of the ion injection injury wafer. 展开更多
关键词 xrd elliptic polarization injection injury layer
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