ZnO films with <110> orientation were grown on R-Al 2O 3 substrates by LP-MOCVD, and the growth temperature was optimized. The quality of crystal, surface morphology and optical characteristic of the samples wer...ZnO films with <110> orientation were grown on R-Al 2O 3 substrates by LP-MOCVD, and the growth temperature was optimized. The quality of crystal, surface morphology and optical characteristic of the samples were investigated by XRD, AFM and PL method. The experimental results show that the FWHM of the optimized sample is only 0.50°. Compared with that of the sample grown on C-Al 2O 3 material under the same conditions, the surface morphology of the first sample is denser and smooth, while the PL spectra indicate that the exciton emitting intensity of <110> oriented ZnO film in the ultraviolet range is lower. However, the deep-level emission related to the intrinsic defects disappears in the spectrum. All above indicate that the <110> oriented ZnO film is more suitable for fabrication of the film SAWF with a low loss and a high frequency than for fabrication of the emitting device in ultraviolet range.展开更多
CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle ...CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed.CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm^-1, and the band gap Eg is in the range of 1.30-1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 10^16 cm^-3.展开更多
文摘ZnO films with <110> orientation were grown on R-Al 2O 3 substrates by LP-MOCVD, and the growth temperature was optimized. The quality of crystal, surface morphology and optical characteristic of the samples were investigated by XRD, AFM and PL method. The experimental results show that the FWHM of the optimized sample is only 0.50°. Compared with that of the sample grown on C-Al 2O 3 material under the same conditions, the surface morphology of the first sample is denser and smooth, while the PL spectra indicate that the exciton emitting intensity of <110> oriented ZnO film in the ultraviolet range is lower. However, the deep-level emission related to the intrinsic defects disappears in the spectrum. All above indicate that the <110> oriented ZnO film is more suitable for fabrication of the film SAWF with a low loss and a high frequency than for fabrication of the emitting device in ultraviolet range.
文摘CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuC1and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed.CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm^-1, and the band gap Eg is in the range of 1.30-1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 10^16 cm^-3.
