Persistent Spectral Hole Burning of Eu^3＋ Doped Y2SiO5 Crystal at 579.62 nm

By using an Ar^＋ ion laser, a tunable Rh6G dye laser（linewidth： 0.5 cm^-1） pumped by the second harmonic of a YAG：Nd laser and an 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, the spectra and spectral hole burning of Eu^3＋：Y2SiO5 crystal were researched in this paper.Photoluminescence excitation spectrum and site selective fluorescence spectrum were detected at room temperature and 77 K. Hole burning experiments were reached at 16 K. A spectral hole with hole width of about 80 MHz were detected and it could be kept for 10 h.

Transverse Optical Properties of the Eu3+:Y2SiO5 Crystal in Electromagnetically Induced Transparency

According to density matrix equations of the interaction between light and matter, the expression for the suscep- tibility of the Eu^3＋ ：Y2SiO5 crystal is obtained. When the control field is a Gaussian beam, we investigate and analyze the influence of probe detuning, the Rabi frequency of the control field and the laser line width on the transverse optical properties. We also analyze the influence of the dope-ion concentration on electromagnetieally induced transparency （EIT）. The analysis result indicates that the transmission is not a monotonic function of the dope-ion concentration. Based on the influences of various parameters on the transverse optical properties, we choose the appropriate parameters to realize the desired EIT and gradient refractive index, which has applications in focusing and imaging.

Fluorescence Properties of Eu^(3+) :Y_2SiO_5 Single Crystal

Fluorescence properties of Eu 3+ :Y 2SiO 5 have been investigated. Transitions between 5D and 7Fwere were studied with transmission spectra, fluorescence spectra, photoluminescence excitation ( or absorption ) spectra and site selective fluorescence spectra. The X ray powder diffraction pattern of Eu 3+ :Y 2SiO 5 shows that the crystal belong to monoclinic, and lattice's constants a, b, c and β are obtained by a simulation with the measured diffraction angles.

579.62nm波长处Y_2SiO_5∶Eu^(3+)晶体永久性光谱烧孔

分别利用氩离子激光,二倍频YAG∶Nd激光泵浦的诺明6G可调谐窄线宽(0.5 cm-1)染料激光和899-21可调谐染料激光作为光源,以单色仪-锁相放大器-光电倍增管-计算机数据采集系统记录光谱,对Y2SiO5∶Eu3+晶体进行了光谱和光谱烧孔研究。在常温和液氮温度下测量了晶体的激发光谱、荧光光谱等。在16 K温度下对晶体进行了光谱烧孔研究,得到了孔宽约80 MHz并能保存10 h的永久性光谱孔。

第一性原理研究硅酸钇晶体的电子结构和物理性质

基于第一性原理利用CASTEP软件系统地模拟计算了理想的单斜硅酸钇晶体的电子结构、光学、力学和热力学等物理性质。光学性质的计算结果表现出了与硅酸钇结构一致的各向异性,比较得到的力学性质与实验结果基本吻合,表明硅酸钇是一种良好的韧性与耐磨性材料。运用线性响应的方法确定了声子态密度,得出其热力学性质,如等容比热、熵和德拜温度,得到的热容值与实验值符合较好。

Pr^(3+)∶Y_2SiO_5晶体中橙—蓝频率上转换过程

测量了Pr3+∶Y2SiO5晶体的吸收谱,标定了室温下Pr3+在Y2SiO5晶体4f2组态内的能级.利用579 nm激光激发Pr3+∶Y2SiO5晶体,观察到480~515 nm上转换荧光带.运用时间分辨激光光谱技术测量了3P0能级的上转换荧光衰减曲线.通过研究上转换荧光的衰减曲线、吸收谱、激发谱和上转换荧光强度与泵浦激光单脉冲能量的关系,确定了以1D2为中间态的能量转移上转换主要是上转换机制.

Eu^(3+):Y_2SiO_5晶体中射频场耦合四能级系统的电磁感应吸收和透明

在Eu3+:Y2SiO5晶体中,以射频场耦合自旋子能级的方式,得到一个四能级系统。运用密度矩阵方程,研究了该射频场耦合四能级系统的吸收特性。结果表明,由于光学耦合场和射频场的共同作用,探测吸收谱可分别呈现出电磁感应透明(EIT)和电磁感应吸收(EIA)这两种相反的量子效应。当射频场共振作用时,在射频场导致的Autler-Townes分裂的双峰区域内出现EIT效应;非共振时,又会出现EIA效应。EIT和EIA窗口位置决定于光学耦合场的频率失谐量。改变射频场和光学耦合场的拉比频率、失谐量等参数,可以实现EIT和EIA窗口位置、线宽,以及这两种效应之间的转换控制。