水平定向结晶法生长浓度渐变Yb∶YAG激光晶体及光谱性能研究

本文采用水平定向结晶(HDC)法成功生长出180 mm×81 mm×16 mm的浓度渐变Yb∶YAG激光晶体,从放肩部位和尾部分别获取了尺寸为40 mm×40 mm×7 mm、70 mm×70 mm×7 mm的Yb∶YAG激光晶体板条各两件。采用632 nm激光、偏光应力仪对晶体板条的光学性质进行检测,实验结果发现靠近晶坯自由表面的板条内部通透,无散射光路,应力较小且分布均匀,表明该晶体板条具有优异的光学质量。进一步测试分析了晶体板条不同位置处的吸收光谱,根据935 nm波长处的吸收系数计算出Yb^(3+)的掺杂浓度,发现40 mm×40 mm×7 mm的激光晶体板条中Yb^(3+)掺杂浓度沿晶体生长方向逐步增加,浓度梯度约为0.42%/cm;而70 mm×70 mm×7 mm的激光晶体板条中Yb^(3+)掺杂浓度几乎保持不变,约为4.50%。

宽温区Yb∶YAG板条激光模块热畸变仿真研究

本文对不同冷却温度下的Yb:YAG晶体板条激光模块高功率运转时的温度场、应力场及对应的热畸变进行了仿真分析研究。结果显示,随着冷却温度从300 K降低至77K,板条的温度梯度热应力与应变都明显降低。当冷却温度为77 K时,最大主应力为4.14 MPa,仅为常温时的15.6%,最大主应变为3.82×10^(-5),仅为常温时的6%。为了分析Yb:YAG晶体板条激光模块不同冷却温度下输出激光的光束质量,以确定其最佳运转温度,我们采用光线追迹的方法,对单程通过板条的1030 nm探测光进行仿真。可以看到,当冷却温度为77 K时,远场光斑能量更为集中,且探测光光程差的PV值为0.7941μm,仅为300 K时的59.6%。模拟结果表明低温运转有利于Yb:YAG晶体板条激光模块产生高功率高光束质量激光输出,这为高功率高光束质量Yb:YAG晶体板条激光的设计工作奠定了基础。

激光二极管端泵Yb:YAG晶体的温度场及应力场

为了解决激光二极管端面泵浦Yb:YAG晶体引起的热效应问题,通过对晶体工作特点的分析,建立了周边冷却恒温、端面与空气存在热交换的有限元热模型。利用泊松方程,对Yb:YAG晶体的温度场、热应力场、热形变场和热透镜焦距进行了数值计算,并定量分析了激光二极管泵浦光的高斯阶次、光斑半径和泵浦功率对激光晶体温度场的影响。研究结果表明:若激光二极管泵浦功率为50 W,耦合到泵浦面的光斑半径为400μm时,晶体尺寸为3 mm×3 mm×4 mm、掺杂浓度为5.0 at.%的Yb:YAG晶体端面的最高温升为59.2 K,最大热形变量为0.64567μm,晶体内稳定时最大应力为2.380×108 N/m^(2),热透镜焦距为19.99 mm,该条件下激光器可正常运行。研究结果为全固态Yb:YAG激光器的设计提供了理论依据。

基于零声子线泵浦的高效率Yb∶YAG薄片激光器

高功率激光器在工业应用领域的需求不断增长,提高光-光转化效率是降低其生产制造成本的关键途径。针对提高激光器光-光转化效率所面临的增益介质的热负荷问题,利用锁定波长的969 nm“零声子线”泵浦、自主研制的高性能Yb∶YAG薄片晶体和48冲程泵浦系统等,搭建了高效的连续Yb∶YAG薄片激光器系统,实现了最高输出功率373 W,光-光转化效率可达73.37%。其优异性能为后续开展千瓦级超快Yb∶YAG薄片激光器研究奠定了基础。

放电等离子烧结Ce、Yb共掺钇铝石榴石稀土荧光粉及其在光伏电池中的应用

通过多场耦合实现快速低温烧结的放电等离子技术具有快速、节能和环保等显著优势,在诸多工业领域中得到广泛应用。利用该技术合成Ce^(3+)、Yb^(3+)共掺钇铝石榴石稀土荧光粉,通过物相结构、形态和光谱特性对稀土荧光粉进行综合分析。结果表明,放电等离子烧结工艺有利于Ce^(3+)和Yb^(3+)嵌入钇铝石榴石的晶格中,晶格常数为1.2005 nm。经研磨后的稀土荧光粉颗粒粒径为1~2μm,YAG:Ce^(3+),Yb^(3+)稀土荧光粉的发射光谱峰值为552 nm和720 nm。具有光转换功能的光伏电池的测试结果表明,光伏电池相对外量子响应在500~1000 nm波长范围内有明显改善,同时短路电流密度高达35.95 mA/cm^(2),增益达0.51 mA/cm^(2),光电转换效率相对提高1.91%。

Lu^(3+)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体的增强红色上转换发光与光学温度传感性能

采用密封的坩埚下降法技术生长了一系列Lu^(3+)(摩尔分数0、0.6%、1.2%、1.8%)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体。在980 nm LD激发下,观察到单晶体的绿光543 nm(^(5)S_(2)/^(5)F_(4)→^(5)I_(8))、红光656 nm(^(5)F_(5)→^(5)I_(8))以及近红外750 nm(^(5)S_(2)/^(5)F4→^(5)I_(7))上转换发光。从上转换发光强度随激发光强度的变化情况,确定了543 nm、656 nm与750 nm的发光为双光子跃迁过程。研究了Lu^(3+)离子掺杂浓度对其发光强度与荧光寿命的影响情况,随着Lu^(3+)掺杂浓度从0增加到1.8%,单晶体中的656 nm红光逐步增强,543 nm绿光与750 nm近红外光随之减弱,红绿光强度比从0.01增加到了1.55,而543 nm荧光寿命从1.29 ms降低至0.99 ms。Lu^(3+)离子的掺入取代Y^(3+)晶格位,改变了单晶体的局域场环境,导致上转换发光强度的变化。基于随温度变化的上转换红光656 nm(^(5)F5→^(5)I8)与绿光543 nm(^(5)S_(2)/^(5)F4→^(5)I8)的发光强度变化,研究了1.8%Lu^(3+)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体在298~448 K范围内的绝对灵敏度和相对灵敏度最大值分别为0.242%·K^(-1)和0.217%·K^(-1)。

低强度脉冲伽马辐射测量中LaCl_3、YAG∶Yb和CeF_3闪烁探测器优选

为了在低强度脉冲伽马辐射测量中获得更精密可靠的测试数据,对La Cl3(50 mm×30 mm)、YAG∶Yb(50mm×50 mm)两种新型闪烁探测器和常用Ce F3(45 mm×20 mm)闪烁探测器的灵敏度、伽马/中子甑别能力、时间响应特性、统计涨落等主要参量进行了实验测量和对比。实验测量结果表明:La Cl3闪烁探测器灵敏度最高;伽马/中子甑别能力比另两种闪烁探测器高1倍以上;时间响应与Ce F3闪烁探测器相当;统计涨落最小(测点注量率相当的情况下)。进行中子、伽马混合脉冲辐射场中的低强度脉冲伽马辐射测量时,三种闪烁探测器中,La Cl3闪烁探测器是一种更佳的实用候选闪烁探测器。

YAG∶Ce,Yb近红外下转换荧光粉中的离子簇集

通过457 nm和915 nm连续激光器对固相反应法和溶胶-凝胶法制备的YAG:Ce,Yb荧光粉中的Yb^(3+)近红外发光和可见上转换发光能量转移机制进行了研究。两种激发下,溶胶-凝胶法样品的近红外发光猝灭浓度均在5%左右,发光强度变化曲线趋势相近;固相反应法产物,915 nm直接激发猝灭浓度为5%左右,457 nm间接激发猝灭浓度为10%左右,说明固相反应法掺杂离子分布更不均匀。样品中存在来自Yb^(3+)到杂质离子间能量传递和Yb^(3+)-Yb^(3+)离子对的两种上转换发光;固相反应法产物Yb^(3+)-Yb^(3+)离子对协同发光强于溶胶-凝胶法产物,说明Yb^(3+)离子簇集现象较为明显,可能降低此类材料的实际近红外转换效率。

Yb∶YAG晶体荧光性能的调控研究

为了对Yb∶YAG晶体荧光性能进行调控以使其更好地应用于高能脉冲型激光器,结合密度泛函理论和晶体场理论,对掺杂调控后的Yb∶YAG晶体的电子结构、光谱学性质进行了理论计算,分析了不同粒子掺杂和占据格位情况下Yb∶YAG晶体的荧光性能,并在此基础上计算配方完成晶体生长实验、制备样品进行荧光性能测试验证。结果表明,通过以上过程掌握了Yb∶YAG晶体荧光寿命等参数的调控方法,共掺Cr后的Yb∶YAG荧光寿命可以从1.18 ms降低至0.94 ms。该研究为Yb∶YAG晶体实现高能脉冲激光应用奠定了理论和实验基础。

提拉法下Yb:YAG单晶缺陷的正电子湮没研究

为满足固体激光器的应用需求,研究人员不断改进YAG激光晶体生长技术,其中控制YAG中的缺陷结构对于晶体的生长尤为重要。本工作对提拉法两种工艺制备的晶体样品进行了缺陷研究,特别是晶体散射点的起源。正电子湮没技术是一种对材料微观结构十分灵敏且有效的核物理技术分析表征手段,对空位缺陷、微孔等极为敏感。根据正电子湮没寿命谱与多普勒展宽谱的分析结果,无论工艺、有无散射点,样品的正电子寿命及多普勒展宽线性参数均存在差异。这说明晶体主要缺陷是YAG结构中的本征缺陷,散射点可能是空位团聚引起的纳米微孔,研究表明该技术可以灵敏地表征YAG晶体散射点。正电子湮没实验反映的晶体单晶质量差异与X射线衍射、单晶摇摆曲线、光透过率以及位错密度结果吻合。在研究晶体的物理性能和缺陷与材料微结构的关系上正电子湮没技术具有独特的技术优势,同时正电子湮没技术可以在微观尺度上有效反映晶体质量。

溶胶-凝胶法制备YAG∶Ce,Yb纳米荧光粉及其发光性质研究

使用溶胶-凝胶法在不同煅烧温度下制备了不同掺杂的YAG∶Ce,Yb荧光粉。使用扫描电镜、X射线衍射仪对其形貌、结构进行了表征;采用光致发光、荧光寿命等技术,对其发光性质进行了研究。结果表明:粉体粒径随煅烧温度上升而增大,在1 000℃下,得到平均尺寸~84 nm的纳米荧光粉。溶胶-凝胶法产物与高温固态法产物相比,Yb^(3+)离子发光的猝灭浓度由10%下降至5%。这可能是由于溶胶-凝胶反应产物体系中掺杂离子分布更加均匀所致。

Comparative spectroscopic investigation of Yb-doped YAG,YSAG and YLaO_3 transparent ceramics

Transparent Yb doped YAG, YSAG and YaLaO3 ceramics are fabricated by using the co-precipitation method. The spectral properties and thermal parameters of these Yb doped cubic phase transparent ceramics are compared, and their different and potential applications are also analysed. The absorption cross-section and the emission cross-section of these ceramics are measured and calculated. The essential properties of these materials especially for the rep-rated pulsed high-energy diode-pumped solid-state lasers are investigated. The results show that Yb doped YAG, YSAG and YaLaO3 are all suitable materials used for diode-pumped solid-state lasers.

Novel Phenomenon on Valence Unvariation of Doping Ion in Yb:YAG Transparent Ceramics Using MgO Additives

Yb：YAG nanopowders were synthesized by the alcohol-water co-precipitatlon method adding MgO as sintering additives. Appropriate amount of MgO adding can restrict the agglomeration and reduce the particle size of Yb：YAG powders. When the MgO content was 0.04wt%, well-dispersed Yb：YAG powders with ellipsoidal particles of less than 100 nm diameter were obtained. The experimental results showed the valence variation of doping ion Yb〉 would not appear when adding MgO as sintering additives, so ceramics showed colorless transparent instead of green due to Yb^2＋ color center using traditional SiO2 as additives. The transmission of the sintered Yb：YAG ceramics can reach 80.6% even without annealing. Ceramic morphology showed that the grains had uniform-distribution with the size of 10 iam or so, and no impurity and pore existed in the grain boundary and crystalline while using optimal sintering conditions.

Diode-pumped Kerr-lens mode-locked femtosecond Yb:YAG ceramic laser

We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb：YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb：YAG ceramic laser with sub-100 fs pulse duration.%@ 1674-1056

Yb∶YAG晶体的晶胞参量及Yb^(3+)分凝系数的研究

应用提拉法生长出不同Yb3+ 浓度的Yb3xY3( 1-x) Al5O12 晶体 Yb3+ 离子的分凝系数 1是 1 .0 8±0 .0 1 ,与Yb3+ 离子掺杂浓度无关 研究了Yb3xY3( 1-x) Al5O12 晶体的晶胞参量 ,推导出联系晶胞参量、密度与Yb3+

Yb:YAG及Cr,Yb:YAG晶体的发光特性

研究了室温下Yb:YAG的上转换荧光光谱,此荧光归因于Yb3+ 离子的“合作”发光和Yb3+ 离子到稀土杂质离子的能量转移。测试了Yb:YAG晶体的X射线荧光,发光峰对应于电荷迁移态到Yb3+ 离子的基态、激光态间的跃迁。研究了Cr,Yb:YAG晶体的荧光光谱,讨论了Cr4+激光输出的可能性。

Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce^(3+)-Yb^(3+)

Ce3＋-Yb3＋ doped Y3Al5O12 （YAG） is a luminescent down-conversion material which could convert visible pho- tons to near infrared photons. In this work, YAG：Ce3＋-Yb3＋ is applied on the front surface of mass-produced mono crystalline Si solar cells. For the coated cells, the external quantum efficiencv from the visible to the near infrared is improved, and the energy conversion efficiency enhances from 11.70% to 12.2% under AMI.SG. Furthermore, the phosphor down-conversion effect on the solar cell is characterized by the microwave detected photoconductivity technique on the n-type silicon wafer under the 977nm excitation. The down-conversion materials improve the average excess carrier lifetime from 22.5μs to 24.2#s and the average surface recombi- nation velocity reduces from 424.Scm/s to 371.6cm/s, which reveal the significant reduction in excess carrier recombination by the phosphors.

Structural and Optical Properties of Ce^(3+), Yb^(3+) Co-doped YAG Films by Pulsed Laser Deposition

Ce3＋, Yb3＋ co-doped Y3Al5O12 films were prepared by pulse laser deposition. X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence spectra were used to characterize their structural and luminescent properties. Near-infrared quantum cutting from the films was observed via a cooperative energy transfer from Ce3＋ to Yb3＋ ions. The high quantum efficiency of the films implies that Ce3＋,Yb3＋ co-doped Y3A15O12 films have potential application by tuning the solar spectrum to enhance the efficiency of silicon solar cells.

Temperature-related performance of Yb^3＋：YAG disc lasers and optimum design for diamond cooling

In this paper the temperature-related performances of the Yb^3＋：YAG disc laser has been investigated based on quasi-three level rate equation model. A compact diamond window cooling scheme also has been demonstrated. In this cooling scheme, laser disc is placed between two thin discs of single crystal synthetic diamond, the heat transfer from Yb^3＋：YAG to the diamond, in the direction of the optical axis, and then rapidly conducted radically outward through the diamond to the cooling water at the circumference of the diamond/Yb^3＋ ：YAG assembly. Simulation results show that increasing the thickness of the diamond and the overlap-length （between diamond and water） decreases the disc temperature. Therefore a 0.3-0.5 mm thick diamond window with the overlap-length of 1.5 2.0 mm will provide acceptable cost effective cooling, e.g., with a pump intensity of 15 kW/cm^2 and repetitive rate of 10 Hz, to keep the maximum temperature of the lasing disc below a reasonable value （310K）, the heat exchange coefficient of water should be about 3000 W/m^2K.

提拉法生长直径10英寸优质Yb∶YAG激光晶体

设计制作了直径10英寸Yb∶YAG激光晶体生长热场,改进了单晶炉称重与旋转系统结构,采用感应加热熔体提拉法结合上称重自动控径技术,成功生长出了直径252 mm、等径长近260 mm的完整Yb∶YAG晶体,晶坯外观完整,无开裂。在5 mW绿光激光和20 mW He-Ne激光照射下检测,晶坯整体无散射。经检测性抛光后,晶坯选材扇区内光学均匀性较好,应力分布均匀。选择口径为152 mm×11.5 mm、长为260 mm的板条区域进行测试,透过波前畸变为0.29λ/inch@633 nm,表明晶坯具有良好的光学质量,可以选切加工宽度达到150 mm的大尺寸晶体板条元件。