放电等离子烧结Ce、Yb共掺钇铝石榴石稀土荧光粉及其在光伏电池中的应用

通过多场耦合实现快速低温烧结的放电等离子技术具有快速、节能和环保等显著优势,在诸多工业领域中得到广泛应用。利用该技术合成Ce^(3+)、Yb^(3+)共掺钇铝石榴石稀土荧光粉,通过物相结构、形态和光谱特性对稀土荧光粉进行综合分析。结果表明,放电等离子烧结工艺有利于Ce^(3+)和Yb^(3+)嵌入钇铝石榴石的晶格中,晶格常数为1.2005 nm。经研磨后的稀土荧光粉颗粒粒径为1~2μm,YAG:Ce^(3+),Yb^(3+)稀土荧光粉的发射光谱峰值为552 nm和720 nm。具有光转换功能的光伏电池的测试结果表明,光伏电池相对外量子响应在500~1000 nm波长范围内有明显改善,同时短路电流密度高达35.95 mA/cm^(2),增益达0.51 mA/cm^(2),光电转换效率相对提高1.91%。

激光照明用YAG∶Ce-CaF_(2)荧光陶瓷的冷烧结制备

荧光陶瓷是激光照明的关键材料。为探究低温制备荧光陶瓷的可行性,采用冷烧结工艺在425℃成功制备了致密度高、晶粒尺寸均匀、相界分明的YAG∶Ce-CaF_(2)复合荧光陶瓷。结果表明:发光相与基体之间没有可检测到的界面反应;制备的荧光陶瓷具有较高的量子效率(74.3%)、较好的热导率(室温可达9.4 W·m^(-1)·K^(-1))、优异的热稳定性(在400 K时发光强度仅损失4.3%);在蓝光激光(451 nm)激发下,复合荧光陶瓷表现出良好的黄光发射,并展现出光通量为910.7 lm和流明效率为91.07 lm·W^(-1)的高亮度白色激光照明,其荧光寿命无衰减(66 ns),相关色温为4483~8247 K,显色指数为73.4~83.6。冷烧结工艺是低温条件下制备性能优良荧光陶瓷的新方法。

YAG∶Ce,Yb近红外下转换荧光粉中的离子簇集

通过457 nm和915 nm连续激光器对固相反应法和溶胶-凝胶法制备的YAG:Ce,Yb荧光粉中的Yb^(3+)近红外发光和可见上转换发光能量转移机制进行了研究。两种激发下,溶胶-凝胶法样品的近红外发光猝灭浓度均在5%左右,发光强度变化曲线趋势相近;固相反应法产物,915 nm直接激发猝灭浓度为5%左右,457 nm间接激发猝灭浓度为10%左右,说明固相反应法掺杂离子分布更不均匀。样品中存在来自Yb^(3+)到杂质离子间能量传递和Yb^(3+)-Yb^(3+)离子对的两种上转换发光;固相反应法产物Yb^(3+)-Yb^(3+)离子对协同发光强于溶胶-凝胶法产物,说明Yb^(3+)离子簇集现象较为明显,可能降低此类材料的实际近红外转换效率。

溶胶-凝胶法制备YAG∶Ce,Yb纳米荧光粉及其发光性质研究

使用溶胶-凝胶法在不同煅烧温度下制备了不同掺杂的YAG∶Ce,Yb荧光粉。使用扫描电镜、X射线衍射仪对其形貌、结构进行了表征;采用光致发光、荧光寿命等技术,对其发光性质进行了研究。结果表明:粉体粒径随煅烧温度上升而增大,在1 000℃下,得到平均尺寸~84 nm的纳米荧光粉。溶胶-凝胶法产物与高温固态法产物相比,Yb^(3+)离子发光的猝灭浓度由10%下降至5%。这可能是由于溶胶-凝胶反应产物体系中掺杂离子分布更加均匀所致。

YAG∶Ce Phosphors for WLED via Nano-Pesudoboehmite Sol-Gel Route

The sub-micron sized YAG ： Ce phosphors were synthesized via a modified sol-gel method by peptizing nano-pesudoboehmite particulate. It is found that YAG phase from the dried gel powders appears at 1000 ℃ then the pure YAG phase exists at a relatively lower sintering temperature of 1400 ℃. The smaller sizes of phosphors in the ranges of 1 - 3 μm are obtained due to the contribution of seeding effects of nano-sized alumina particles to strengthen each step of the processes. Both the excitation and emission spectra of photoluminescence of the phosphor obtained at 1400 ℃ meet well with the spectroscopic requirements of the WLED phosphors.

Synthesis of Ce:YAG Phosphor via Homogeneous Precipitation under Microwave Irradiation

Ultra-fine Ce:YAG phosphors were prepared by homogeneous precipitation under microwave irradiation method . The formation of Ce: YAG was investigated by means of XRD and DTA/TG. The purified YAG crystallized phase was obtained at a lower temperature (1100℃). Basically spherical Ce:YAG powders were indicated from TEM images, and the size of the particles is about 80 nm. Two peaks of 436 and 473 nm can be seen from the excitation spectrum in the range of 402 -510 nm. A broad emission band located at 480 ~ 630 nm shows the phosphors prepared by this method have good emission properties.

A novel method for the synthesis of YAG:Ce phosphor

YAG:Ce phosphor was synthesized by a novel simple method,wherein the admixture of three raw materials(Y2O3,α-Al2O3 and CeO2) were first acidified by diluted nitric acid to prepare a precursor,followed by a high temperature heating treatment of the obtained precursor under reductive atmosphere.Through XRD measurement and SEM observation,it was found that Y2O3,one of the raw material,was firstly dissolved into the diluted nitric acid,and then recrystallized on the surface of both α-Al2O3 and CeO2 to form a no...

Spectral Property and Thermal Quenching Behavior of Tb^(3+)-Doped YAG:Ce Phosphor

A series of YAG：Ce,Tb phosphors were synthesized by vacuum sintering method.Moreover,their spectral properties,thermal quenching behaviors and color rendering properties were investigated systematically.The photoluminescence emission spectra of YAG：Ce,Tb show a great red shift compared with that of YAG：Ce.Direct energy transfer from Tb^（3＋） to Ce^（3＋） ions is verified based on the analysis of different photoluminescence spectra.The quenching temperature for Tb^（3＋）-doped YAG：Ce phosphors is about 490 K.The thermal activation energy is estimated to be 0.18 and 0.291 eV for Tb^（3＋）-doped YAG：Ce and YAG：Ce phosphors,respectively.The smaller activation energy for Tb^（3＋）-doped YAG：Ce means a more rapid nonradiative transition from 5d to 4f state,thus resulting in the lower quenching temperature.In addition,white LEDs with improved color rendering properties are achieved by using modified YAG：Ce,Tb phosphors.

Synthesis of YAG∶Ce^(3+) Phosphor by Polyacrylamide Gel Method and Promoting Action of α-Al_2O_3 Seed Crystal on Phase Formation

YAG： Ce^3 ＋ phosphor particles were prepared using polyacrylamide gel method. The structure evolution of powders during annealing process was followed by X-ray diffraction determination. It is found that some intermediate phases, including θ-Al2O3, YAM and YAP, are formed when calcining polyacrylamide gel, however, the pure YAG phase can be formed directly when calcining polyacrylamide gel with α-Al2O3 as seed crystal. These facts show that the existence of α- Al2O3 seed crystal can block the formation of θ-Al2O3, YAM and YAP, and accelerate its reaction with Y2O3 to form YAG phase directly at lower temperature. The emission peak of prepared YAG ： Ce^3 ＋ phosphor is wide with maximum at 550 nm and the exitation band has two peaks, the major one is around at 460 nm, which matches the blue emission of GaN LED and is suitable for the assemble of white LED. Some fluxes can enhance the photoluminescence intensity of phosphor particles, that can be attributed both to the improvement of crystallization processes of YAG and to the stabilization of trivalence cerium ion in YAG：Ce^3 ＋.

Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce^(3+)-Yb^(3+)

Ce3＋-Yb3＋ doped Y3Al5O12 （YAG） is a luminescent down-conversion material which could convert visible pho- tons to near infrared photons. In this work, YAG：Ce3＋-Yb3＋ is applied on the front surface of mass-produced mono crystalline Si solar cells. For the coated cells, the external quantum efficiencv from the visible to the near infrared is improved, and the energy conversion efficiency enhances from 11.70% to 12.2% under AMI.SG. Furthermore, the phosphor down-conversion effect on the solar cell is characterized by the microwave detected photoconductivity technique on the n-type silicon wafer under the 977nm excitation. The down-conversion materials improve the average excess carrier lifetime from 22.5μs to 24.2#s and the average surface recombi- nation velocity reduces from 424.Scm/s to 371.6cm/s, which reveal the significant reduction in excess carrier recombination by the phosphors.

Structural and Optical Properties of Ce^(3+), Yb^(3+) Co-doped YAG Films by Pulsed Laser Deposition

Ce3＋, Yb3＋ co-doped Y3Al5O12 films were prepared by pulse laser deposition. X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence spectra were used to characterize their structural and luminescent properties. Near-infrared quantum cutting from the films was observed via a cooperative energy transfer from Ce3＋ to Yb3＋ ions. The high quantum efficiency of the films implies that Ce3＋,Yb3＋ co-doped Y3A15O12 films have potential application by tuning the solar spectrum to enhance the efficiency of silicon solar cells.

Semi-Quantitative Estimation of Ce³⁺/Ce⁴⁺Ratio in YAG:Ce³⁺Phosphor under Different Sintering Atmosphere

In order to confirm the relationship between the luminescence and the ratio of Ce3+/Ce4+ more clearly, a series of YAG:Ce3+ (Yttrium Aluminum Garnet, Y2.94Al5O12:0.06Ce3+) phosphors were pre- pared under different sintering atmosphere. A semi-quantitative analysis based on X-ray photoe-lectron spectroscopy (XPS) was introduced to study the mole ratio of Ce3+/Ce4+ in the as-synthesized YAG:Ce3+ phosphors. The results indicated that the percentage of Ce3+/(Ce3+ + Ce4+) reached 88.46% under the reduction atmosphere. The emission intensity of YAG:Ce3+ phosphors was in-creased significantly with the increasing of Ce3+ concentration.

YAG∶Ce发光材料合成的助熔剂研究

采用高温固相法合成YAG：Ce荧光粉时，传统的以硼酸为助熔剂的产物硬度很大，处理过程中容易破坏晶体形貌，影响发光性能。采用氟化物助熔剂（MgF2、CaF2、SrF2、BaF2、AlF3）及它们与H3BO3混合助熔剂来制备YAG：Ce，研究了助熔剂种类及其浓度对制得的粉体发光性能的影响，比较了它们的晶体形貌与物相组成。结果表明，采用不同助熔剂合成的YAG：Ce的激发光谱及发射光谱基本相同，而BaF2、AlF3、SrF2及它们与H3BO3的混合助熔剂系列，可在一定程度上降低产品硬度、提高产品发光亮度；其中H3BO3-SrF2系列、H3BO3～BaF2系列的晶化程度与粒度分布均有改善；H3BO3～BaF2系列的物相组成比较纯，除Y3Al5O12：主相外基本无杂相。

白光LED用YAG：Ce^3＋荧光粉的温度猝灭性质

荧光粉的温度猝灭性质是影响白光LED的光效、光色参数和可靠性的关键因素之一。研究了不同激活剂浓度,不同元素掺杂的Y3-xCexAl5O12(YAG∶Ce3+)荧光粉在460nm光激发下的变温亮度和发射光谱。结果表明温度显著影响YAG∶Ce3+荧光粉的发光性能,随着温度的升高,发光强度下降,同时发射光谱红移。Ce含量为0.07(原子数分数)的YAG∶Ce3+荧光粉,150℃下亮度值约为室温时的89%,200℃时的发射光谱相对室温的红移了约10nm。Ce含量的改变对YAG∶Ce3+荧光粉的热猝灭性质影响较小。Lu的掺杂使YAG∶Ce3+荧光粉的发射波长蓝移,同时会显著改善荧光粉的热猝灭性能。Gd的掺杂使荧光粉的发射波长红移,同时也会导致热猝灭性能的劣化。

白光LED用新型Ce,Pr掺杂的YAG单晶荧光材料的光谱性能研究

为了改善白光LED用荧光材料效率低、均匀性差、光衰大、寿命短及物化性能差等不足,本文采用单晶荧光材料取代荧光粉来制备白光LED,并对白光LED用新型YAG单晶荧光材料的制备和光谱性能进行了研究.采用提拉法生长了白光LED用Ce∶YAG及Pr,Ce∶YAG晶体,并通过吸收光谱,激发、发射光谱对晶体材料的光谱特性进行表征.研究表明,Ce∶YAG单晶荧光材料可以被发射波长460 nm左右的蓝光芯片有效激发,产生一个范围为480~650 nm宽峰发射.通过Pr3＋,Ce3＋离子共掺杂可以有效补偿Ce3＋离子单掺杂YAG荧光材料发光中的红色发光成分.

白光LED用YAG∶Ce^(3+)荧光粉的研究进展

白光LED技术对于合理利用能源、缓解能源危机和绿色照明具有重要意义。文章综述了近年来用于高效蓝光LED激发形成白光的YAG∶Ce3+荧光粉合成工艺研究的新进展及国内外发展现状,对高温固相反应法、溶胶-凝胶法、喷雾热解法、共沉淀法等方法优缺点进行了综合比较,并探讨了YAG∶Ce3+荧光粉在应用方面有待于提高的地方。对影响荧光粉的发光效率和转换效率的后处理工艺、粒度分布、发光性能各种因素进行了分析,并对今后的发展研究趋势进行了展望。

YAG∶Ce荧光粉的柠檬酸-凝胶法合成与表征

采用柠檬酸-凝胶法合成技术制备YAG∶Ce荧光粉,研究了Ce3+掺杂量、煅烧温度对荧光粉的光谱强度的影响。结果表明:当Ce3+掺杂量x≤0.07时,光谱强度随x增大而增强;当x>0.07时,光谱强度随x增大而减弱。随着煅烧温度的提高,粉体的结晶度不断提高,YAG∶Ce荧光粉的光谱相对强度逐渐增强。光谱的峰形和峰值不受温度和x的影响,主激发峰位于469nm,发射峰位于529nm。

喷雾热解制备YAG∶Ce荧光粉及其发光性质表征

采用喷雾干燥热解二步法制备Y3Al5O12∶Ce荧光粉.利用X射线衍射、分子荧光光度法等研究柠檬酸和NaF等助剂添加对荧光粉结构与发光性能影响规律.结果表明,热解温度为1 100℃时,荧光粉中已不含YAP等过渡相;NaF能够增加荧光粉的光致发光强度,浓度为0.30 g.L-1时其发光强度最大;加入柠檬酸能够改善荧光粉成型性能,且以与金属离子等摩尔加入时最佳;制备的荧光粉在467 nm处获得最大激发,相应的发射光谱为峰值波长530 nm处的宽带发射.

高能球磨与反应烧结合成YAG∶Ce^(3+)荧光粉的研究

采用高能球磨和反应烧结相结合的方法在1300℃、碳还原气氛下合成了YAG∶Ce3+荧光粉,通过X射线衍射分析(XRD)、场发射扫描电子显微镜图谱(FESEM)、荧光光谱(Ex,Em)研究了反应时间、Ce3+的掺杂量对荧光粉性能的影响。研究结果表明,当反应时间为6h时获得的产物为单一的YAG相,颗粒分布均匀且接近球形;当掺杂Ce3+的摩尔分数x=0.06时,荧光粉的相对发射强度最大。

光学基质粉体YAG及荧光粉体Ce:YAG的制备与表征

采用共沉淀法制备出尺寸分布均匀、分散性良好的立方相钇铝石榴石(YAG)与Ce:YAG纳米粉体。考察了煅烧温度和时间对粉体物相和颗粒大小的影响及Ce3+的掺杂量对Ce:YAG粉体的荧光光谱的影响。借助IR、XRD、BET、SEM和荧光分析仪等测试手段对前驱体、YAG及Ce:YAG纳米粉体进行了表征与分析。结果表明:共沉淀前驱体经900℃煅烧2h后可得到纯立方相的YAG(Ce:YAG)纳米粉体;所得Ce:YAG粉体具有较好的荧光特性且Ce3+的掺杂量增加会造成其荧光光谱红移。