Excellcnt epitaxial, highly coriented YBa_2Cua_3O_7 thin films were deposited successfully by dc sputteringon (1120) sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO_2(YSZ), which was grownby ...Excellcnt epitaxial, highly coriented YBa_2Cua_3O_7 thin films were deposited successfully by dc sputteringon (1120) sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO_2(YSZ), which was grownby rf magnetron sputtering. The YBa_2Cu_3O_7 films exhibited the zero resistance temperature T_(co)= 92 K andcritical current density J_c= 1 .6 × 10￣6A / cm￣2 at 77 K in zcro ficld. The morphology and structure of the bufferlayers and YBa_2Cu_3O_7 / YSZ / sapphire interfaces were determined by using transmission electron microscopytechnique and Auger electron spectroscopy. The results of these studies show that a buffer layer is necessary forobtaining better YBa_2Cu_3O_7 films in preventing reaction between the YBa_2Cu_3O_7 film and the sapphiresubstrate and improving the lattice matching. The superconducting properties of YBa_2Cu_3O_7 films grown onYSZ / sapphire substrates are close to those on standard single crystal YSZ substrates and the sapphire is apromising substrate for passive microwave device application.展开更多
Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that t...Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that the resulting YSZ films exhibited pure c-axis texturing. YBCO films deposited by using demaguetron sputtering on Hastelloy tape with YSZ buffer layer were c-axis oriented with △ω(FWHM of apeak in the rocking curve) = 5. 9° . T_c_o of 91 K and J_c of 2. 0 × 10￣3 A/cm￣2(77 K, OT) were obtained.展开更多
Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering paramet...Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O2 composition of 1：1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.展开更多
文摘Excellcnt epitaxial, highly coriented YBa_2Cua_3O_7 thin films were deposited successfully by dc sputteringon (1120) sapphire substrates with an intermediate buffer layer of Y-stabilized ZrO_2(YSZ), which was grownby rf magnetron sputtering. The YBa_2Cu_3O_7 films exhibited the zero resistance temperature T_(co)= 92 K andcritical current density J_c= 1 .6 × 10￣6A / cm￣2 at 77 K in zcro ficld. The morphology and structure of the bufferlayers and YBa_2Cu_3O_7 / YSZ / sapphire interfaces were determined by using transmission electron microscopytechnique and Auger electron spectroscopy. The results of these studies show that a buffer layer is necessary forobtaining better YBa_2Cu_3O_7 films in preventing reaction between the YBa_2Cu_3O_7 film and the sapphiresubstrate and improving the lattice matching. The superconducting properties of YBa_2Cu_3O_7 films grown onYSZ / sapphire substrates are close to those on standard single crystal YSZ substrates and the sapphire is apromising substrate for passive microwave device application.
文摘Yttria-stabilized zirconia (YSZ) thin films with the c-axis texturing were successfully deposited onpolycrystalline metallic tape (Hastelloy-C) by a dc bias rf magnetron sputtering. X-ray measurements re-vealed that the resulting YSZ films exhibited pure c-axis texturing. YBCO films deposited by using demaguetron sputtering on Hastelloy tape with YSZ buffer layer were c-axis oriented with △ω(FWHM of apeak in the rocking curve) = 5. 9° . T_c_o of 91 K and J_c of 2. 0 × 10￣3 A/cm￣2(77 K, OT) were obtained.
基金National Natural Science Foundation of China (Nos.60577040,60877017)Program for Changjiang Scholars,Innovative Research Team in University of China (No.IRT0739)+1 种基金Innovation Program of Shanghai Municipal Education Commission of China (08YZ04)Shanghai Leading Academic Disciplines of China (S30107)
文摘Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O2 composition of 1：1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.
