Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing...Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing temperature and time were 200 ℃ and 2-6 h, respectively. The structure of the thin films was identified by X-ray diffraction (XRD), the surface morphology and thickness of the thin films were observed by scanning electron microscopy (SEM), and the electrical performance of the thin films was measured by four-point probes. It was shown that the films with an average particle size of 27.53 nm had a preferential orientation along (002), Al3+ had replaced the position of Zn2+ in the lattice without forming the Al2O3 phase and its thickness was 20-25 μm. With the increased annealing time, the intensity of diffraction peaks was decreased, the film exhibited irregular surface morphology gradually, and the resistivity of ZAO films was increased. The lowest resistivity obtained in this study was 3.45×10-5Ω·cm.展开更多
The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. ...The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.展开更多
Owing to both of its high carrier concentration and large band gap, ZnO:Al (ZAO) films which is an n-type degenerate semiconductor, exhibits low resistance and high transmittance in the visible range. This work studie...Owing to both of its high carrier concentration and large band gap, ZnO:Al (ZAO) films which is an n-type degenerate semiconductor, exhibits low resistance and high transmittance in the visible range. This work studies the crystal structure, optical and electrical properties and preparation methods of ZAO films, and discusses the existing problems and application prospective of ZAO films.展开更多
文摘Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing temperature and time were 200 ℃ and 2-6 h, respectively. The structure of the thin films was identified by X-ray diffraction (XRD), the surface morphology and thickness of the thin films were observed by scanning electron microscopy (SEM), and the electrical performance of the thin films was measured by four-point probes. It was shown that the films with an average particle size of 27.53 nm had a preferential orientation along (002), Al3+ had replaced the position of Zn2+ in the lattice without forming the Al2O3 phase and its thickness was 20-25 μm. With the increased annealing time, the intensity of diffraction peaks was decreased, the film exhibited irregular surface morphology gradually, and the resistivity of ZAO films was increased. The lowest resistivity obtained in this study was 3.45×10-5Ω·cm.
文摘The ZAO (ZnO:Al) thin films were prepared by DC reactive magnetron sputtering technique. The relationship between the process parameters and the organizational structure,optical and electrical properties was studied. Through optimizing the process parameters,an optimal preparation parameter can be obtained. Using the optimal parameters to prepare the ZAO thin films,the resistivity of the ZAO film is as low as 4.5×10-4 Ω·cm and the average transmissivity in the visible region is around 80%,the optical and electrical properties meet the application requirements.
基金Funded by the foundation for key projects in 2000 of the Science and Technology Committee of Chongqing China (No.2000-6214).
文摘Owing to both of its high carrier concentration and large band gap, ZnO:Al (ZAO) films which is an n-type degenerate semiconductor, exhibits low resistance and high transmittance in the visible range. This work studies the crystal structure, optical and electrical properties and preparation methods of ZAO films, and discusses the existing problems and application prospective of ZAO films.
