In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on out...In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.展开更多
提出一种新颖的采用π型无源辅助网络的零电压开关(zero voltage switching,ZVS)全桥变换器,它是在传统全桥拓扑上加入由电感和电容组成的无源辅助网络,从而可在宽电压输入和全负载范围内实现原边开关管的ZVS。详细分析该变换器的工作...提出一种新颖的采用π型无源辅助网络的零电压开关(zero voltage switching,ZVS)全桥变换器,它是在传统全桥拓扑上加入由电感和电容组成的无源辅助网络,从而可在宽电压输入和全负载范围内实现原边开关管的ZVS。详细分析该变换器的工作原理及特性,并对电路关键参数进行设计。在此基础上,设计完成一台1kW(54V/20A),开关频率为100kHz的原理样机,实验结果验证了该拓扑的优点。展开更多
设计制作了一款ZVS移相全桥变换器的低压大电流开关电源,详细阐述了部分电路的设计过程和参数计算,并通过抑制桥式变换器中超前/滞后桥臂功率管的高频谐振,降低主电路中上下桥臂的直通风险。最后设计制作的3 k W(15 V/200 A)低压大电流...设计制作了一款ZVS移相全桥变换器的低压大电流开关电源,详细阐述了部分电路的设计过程和参数计算,并通过抑制桥式变换器中超前/滞后桥臂功率管的高频谐振,降低主电路中上下桥臂的直通风险。最后设计制作的3 k W(15 V/200 A)低压大电流电源验证了设计的可行性,给出了详细的实验结果,整机效率达90%以上,对电源开发者有一定的借鉴作用。展开更多
双有源全桥(dual active bridge,DAB)直流变换器有多种调制方式,采用三重移相(triplephaseshift,TPS)调制方式时,有3个控制量,更加灵活。该文分析TPS调制方式下DAB变换器的开关模式及工作波形,推导出在不同工作模式下实现各器件软开关Al...双有源全桥(dual active bridge,DAB)直流变换器有多种调制方式,采用三重移相(triplephaseshift,TPS)调制方式时,有3个控制量,更加灵活。该文分析TPS调制方式下DAB变换器的开关模式及工作波形,推导出在不同工作模式下实现各器件软开关All-ZVS(zero voltage switching)的控制变量约束条件,得到实现All-ZVS的可行域。在此基础上与已有的电感电流有效值最优化控制算法结合,提出一种电流有效值准最优化的All-ZVS控制策略。该策略在全功率范围和双向功率传输下改善了器件的工作条件,在减小导通损耗的前提下进一步消除了开关损耗,大大提高了效率,在低功率段的效率提升尤为明显,有利于进一步提升变换器的开关频率和功率密度。最后搭建实验平台进行验证,实验结果验证了理论分析的有效性。展开更多
移相全桥零电压开通ZVS(zero voltage switching)直流变换器具有工作频率恒定、拓扑结构简单、功率密度高且能利用器件自身的寄生参数谐振实现ZVS等特点,在中高功率应用场合中备受青睐。然而,传统移相全桥ZVS变换器软开关范围有限,存在...移相全桥零电压开通ZVS(zero voltage switching)直流变换器具有工作频率恒定、拓扑结构简单、功率密度高且能利用器件自身的寄生参数谐振实现ZVS等特点,在中高功率应用场合中备受青睐。然而,传统移相全桥ZVS变换器软开关范围有限,存在环流损耗、副边占空比丢失以及整流桥寄生振荡等缺陷。针对移相全桥ZVS变换器存在的问题进行了分析,对典型的拓扑结构和调制策略进行分类,比较了各方案的优势与不足,并提出了一种基于互补占空比的改进方案,建立模型并进行了仿真验证。展开更多
文摘In this paper, the zero voltage switching (ZVS) region of a dual active bridge (DAB) converter with wide band-gap (WBG) power semiconductor device is analyzed. The ZVS region of a DAB converter varies depending on output power and voltage ratio. The DAB converters operate with hard switching at light loads, it is difficult to achieve high efficiency. Fortunately, WBG power semiconductor devices have excellent hard switching characteristics and can increase efficiency compared to silicon (Si) devices. In particular, WBG devices can achieve ZVS at low load currents due to their low parasitic output capacitance (C<sub>o,tr</sub>) characteristics. Therefore, in this paper, the ZVS operating resion is analyzed based on the characteristics of Si, silicon carbide (SiC) and gallium nitride (GaN). Power semiconductor devices. WBG devices with low C<sub>o,tr</sub> operate at ZVS at lower load currents compared to Si devices. To verify this, experiments are conducted and the results are analyzed using a 3 kW DAB converter. For Si devices, ZVS is achieved above 1.4 kW. For WBG devices, ZVS is achieved at 700 W. Due to the ZVS conditions depending on the switching device, the DAB converter using Si devices achieves a power conversion efficiency of 91% at 1.1 kW output. On the other hand, in the case of WBG devices, power conversion efficiency of more than 98% is achieved under 11 kW conditions. In conclusion, it is confirmed that the WBG device operates in ZVS at a lower load compared to the Si device, which is advantageous in increasing light load efficiency.
文摘提出一种新颖的采用π型无源辅助网络的零电压开关(zero voltage switching,ZVS)全桥变换器,它是在传统全桥拓扑上加入由电感和电容组成的无源辅助网络,从而可在宽电压输入和全负载范围内实现原边开关管的ZVS。详细分析该变换器的工作原理及特性,并对电路关键参数进行设计。在此基础上,设计完成一台1kW(54V/20A),开关频率为100kHz的原理样机,实验结果验证了该拓扑的优点。
文摘提出一种新型的倍流整流(current double rectifier,CDR)方式全桥零电压开关(full bridge zero-voltage-switching,FBZVS)变换器,其在传统的CDR FBZVS变换器的原边加入了以耦合电感和电容组成的辅助网络。保留了传统CDR变换器无占空比丢失、输出整流二极管不存在电压尖峰的优点,可实现全负载范围下所有开关管的软开关,同时降低了对输出滤波电感的脉动电流要求,提高了变换器的综合性能。深入分析该变换器在连续电流模式(continuous current mode,CCM)和断续电流模式(discontinuous current mode,DCM)两种模式下的工作原理,讨论其参数设计原则,并完成了一台1.4kW(28V/50A)、开关频率为100kHz的原理样机,实验结果验证了该变换器的优点。
文摘设计制作了一款ZVS移相全桥变换器的低压大电流开关电源,详细阐述了部分电路的设计过程和参数计算,并通过抑制桥式变换器中超前/滞后桥臂功率管的高频谐振,降低主电路中上下桥臂的直通风险。最后设计制作的3 k W(15 V/200 A)低压大电流电源验证了设计的可行性,给出了详细的实验结果,整机效率达90%以上,对电源开发者有一定的借鉴作用。
文摘双有源全桥(dual active bridge,DAB)直流变换器有多种调制方式,采用三重移相(triplephaseshift,TPS)调制方式时,有3个控制量,更加灵活。该文分析TPS调制方式下DAB变换器的开关模式及工作波形,推导出在不同工作模式下实现各器件软开关All-ZVS(zero voltage switching)的控制变量约束条件,得到实现All-ZVS的可行域。在此基础上与已有的电感电流有效值最优化控制算法结合,提出一种电流有效值准最优化的All-ZVS控制策略。该策略在全功率范围和双向功率传输下改善了器件的工作条件,在减小导通损耗的前提下进一步消除了开关损耗,大大提高了效率,在低功率段的效率提升尤为明显,有利于进一步提升变换器的开关频率和功率密度。最后搭建实验平台进行验证,实验结果验证了理论分析的有效性。
文摘移相全桥零电压开通ZVS(zero voltage switching)直流变换器具有工作频率恒定、拓扑结构简单、功率密度高且能利用器件自身的寄生参数谐振实现ZVS等特点,在中高功率应用场合中备受青睐。然而,传统移相全桥ZVS变换器软开关范围有限,存在环流损耗、副边占空比丢失以及整流桥寄生振荡等缺陷。针对移相全桥ZVS变换器存在的问题进行了分析,对典型的拓扑结构和调制策略进行分类,比较了各方案的优势与不足,并提出了一种基于互补占空比的改进方案,建立模型并进行了仿真验证。
