Effect of Landau Zener tunneling by the varying sweeping rate of external field

We study the effect of Landau-Zener （LZ） tunneling caused by the varying sweeping rate of the external field, and solve the problem about the LZ tunneling rate among many levels. The LZ tunneling rate is essentially changed by the unsteady variation of the time-dependent sweeping field and is different from the steadily varying sweeping field, which makes the particles in lower states transit periodically to upper states within a finite time.

Plasmonic Bloch Oscillations and Resonant Zener Tunneling in Subwavelength Metal-Dielectric-Air Waveguide Superlattices

In this paper,we study the propagation properties of surface plasmon polaritons in plasmonic single-cavity superlattices and two-cavity superlattices which are composed of two kinds of alternately stacked subwavelength metal-dielectric-air waveguides with large dispersion.Theoretical predictions of plasmonic time-resolved Bloch oscillations existing in single-cavity superlat-tices and resonant Zener tunneling（ZT） occurring in two-cavity superlattices by the transfer matrix method（TMM） are well dem-onstrated by the numerical simulations on the propagation of SPPs pulse in the two kinds of superlattices by the finite-difference time-domain（FDTD） method.The two proposed superlattices can be conveniently fabricated by present nanotechnology,and the study may promote the realization of plasmonic BO and resonant ZT in nanoscale devices experimentally.

Landau-Zener Tunnelling of Two-Component Bose-Einstein Condensates in Optical Lattices

We investigate the Landau-Zener tunnelling of two-component Bose-Einstein condensates （BECs） in optical lattices. In the neighborhood of the Brillouin zone edge, the system can be reduced to two coupled nonlinear two-level models. From the models, we calculate the change of the tunnelling probability for each component with the linear sweeping rate. It is found that the probability for each component exhibits regular oscillating behavior for the larger sweeping rate, but for smaller rate the oscillation is irregular. Moreover, the asymmetry of the tunnelling between the two components can be induced by the unbalanced initial populations or the inequality of the two self-interactions when the cross-interaction between the components exists. The result can not be found in the single component BECs.

Collapses-revivals phenomena induced by weak magnetic flux in diamond chain

We investigate the quantum dynamical behaviors of bosons in a diamond chain with weak magnetic flux(WMF),including Landau–Zener tunnelling,Bloch oscillations,localization phenomenon,and collapses-revivals phenomena.We observed that collapses-revivals phenomena can occur in diamond chain with WMF and cannot exist in the strong magnetic flux case as the previous study(Chang N N and Xue J K,2018,Chin.Phys.B 27105203).Induced by WMF,the energy band for the system varies from gapless to gapped structure.The position of the extrema of probability amplitude for ground state can also be altered by WMF within a single diamond plaquette.As a consequence,the transitions between different dynamical behaviors of bosons in diamond chain can be manipulated by WMF,depending on its initial configurations.

Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures

Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature.Three different designs were grown on semi-insulating bulk GaN substrates using molecular beam epitaxy(MBE).All samples displayed a single electroluminescent spectral peak at 360 nm with full-width at half-maximum(FWHM)values no greater than 16 nm and an external quantum efficiency(EQE)of≈0.0074%at 18.8 mA.In contrast to traditional GaN light emitters,p-type doping and p-contacts are completely avoided,and instead,holes are created in the GaN on the emitter side of the tunneling structure by direct interband(that is,Zener)tunneling from the valence band to the conduction band on the collector side.The Zener tunneling is enhanced by the high electric fields(~5×106 V cm^(−1))created by the notably large polarization-induced sheet charge at the interfaces between the AlN and GaN.