New Superionic Memory Devices Can Provide Clues to the Human Memory Structure and to Consciousness

Since the work of Penrose and Hameroff the possibility is discussed that the location of human memory and consciousness could be connected with tubulin microtubules. If one would use superionic nano-materials rolled up to microtubules with an electrolyte inside the formed channels mediating fast ionic exchange of protons respectively lithium ions, it seems to be possible to write into such materials whole image arrays (pictures) under the action of the complex electromagnetic spectrum that composes these images. The same material and architecture may be recommended for super-computers. Especially microtubules with a protofilament number of 13 are the most important to note. We connected such microtubules before with Fibonacci nets composed of 13 sub-cells that were helically rolled up to deliver suitable channels. Our recent Fibonacci analysis of Wadsley-Roth shear phases such as niobium tungsten oxide , exhibiting channels for ultra-fast lithium-ion diffusion, suggests to use these materials, besides super-battery main application, in form of nanorods or microtubules as effectively working superionic memory devices for computers that work ultra-fast with the complex effectiveness of human brains. Finally, we pose the question, whether dark matter, ever connected with ultrafast movement of ordinary matter, may be responsible for synchronization between interactions of human brains and consciousness.

Control devices incorporated with shape memory alloy

Abstract： Shape Memory Alloy （SMA） is a type of material that offers some unique characteristics for use in devices for vibration control applications. Based on SMA＇s material properties, fottr types of control devices that incorporate NiTi SMA wires are introduced in this paper, which include three types of dampers （SMA damper, SMA-MR damper and SMA-friction damper） and one kind of isolation bearing （SMA-rubber bearing）. Mechanical models of these devices and their experimental verifications are presented. To investigate the control performance of these devices, the SMA-MR damper and SMA-rubber bearing are applied to structures. The results show that the control devices could be effective in reducing the seismic response of structures.

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO_x/TiO_x/TiN Structure

The resistive switching memory characteristics of 100 randomly measured devices were observed by reducing device size in a Cr/Cr Ox/Ti Ox/Ti N structure for the first time.Transmission electron microscope image confirmed a viahole size of 0.4 lm.A 3-nm-thick amorphous Ti Oxwith 4-nm-thick polycrystalline Cr Oxlayer was observed.A small 0.4-lm device shows reversible resistive switching at a current compliance of 300 l A as compared to other larger size devices(1–8 lm)owing to reduction of leakage current through the Ti Oxlayer.Good device-to-device uniformity with a yield of[85%has been clarified by weibull distribution owing to higher slope/shape factor.The switching mechanism is based on oxygen vacancy migration from the Cr Oxlayer and filament formation/rupture in the Ti Oxlayer.Long read pulse endurance of[105cycles,good data retention of 6 h,and a program/erase speed of 1 ls pulse width have been obtained.

Investigation of flux dependent sensitivity on single event effect in memory devices

Heavy-ion flux is an important experimental parameter in the ground based single event tests. The flux impact on a single event effect in different memory devices is analyzed by using GEANT4 and TCAD simulation methods. The transient radial track profile depends not only on the linear energy transfer （LET） of the incident ion, but also on the mass and energy of the ion. For the ions with the energies at the Bragg peaks, the radial charge distribution is wider when the ion LET is larger. The results extracted from the GEANT4 and TCAD simulations, together with detailed analysis of the device structure, are presented to demonstrate phenomena observed in the flux related experiment. The analysis shows that the flux effect conclusions drawn from the experiment are intrinsically connected and all indicate the mechanism that the flux effect stems from multiple ion-induced pulses functioning together and relies exquisitely on the specific response of the device.

A novel one-time-programmable memory unit based on Schottky-type p-GaN diode

In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.

DESIGN CONCEPT FOR SNAP-ACTING TWO-WAY SHAPE MEMORY DEVICES

Snap-acting two way shape memory device can be obtained by using the design proposed by authors.Some essential parameters which characterize the properties of device have been pro- posed also in this paper.And the principle and method according to which a practical snap-acting device can be designed have been described.

Development of a Measurement Software for the Characterization of WORM Devices for Novel Memory Storage Applications

We hereby propose a software solution to perform high quality electrical measurements for the characterization of WORM (write-once read many), a new generation memory device which is being intensively studied for non-volatile data storage. The as-proposed software is completely based on .NET framework and sample C# code. The paper performed a relevant measurement based on this software. Working WORM devices, based on a polymeric matrix embedded with gold and copper sulfide nanoparticles, have been used for test measurements. The aim of this paper is to show the main steps to develop a fully working measurement software without using any expensive dedicated software.

Current Controlled Relaxation Oscillations in Ge_2Sb_2Te_5-Based Phase Change Memory Devices

The relaxation oscillation of the phase change memory （PCM） devices based on the Ge2Sb2Te5 material is investigated by applying square current pulses. The current pulses with different amplitudes could be accurately given by the independently designed current testing system. The relaxation oscillation across the PCM device could be measured using an oscilloscope. The oscillation duration decreases with time, showing an inner link with the shrinking threshold voltage Vth. However, the relaxation oscillation would not terminate until the remaining voltage Von reaches the holding voltage Vh. This demonstrates that the relaxation oscillation might be controlled by Von. The increasing current amplitudes could only quicken the oscillation velocity but not be able to eliminate it, which indicates that the relaxation oscillation might be an inherent behavior for the PCM cell.

Design of an Electrically Written and Optically Read Non-volatile Memory Device Employing BiFeO3/Au Heterostructures with Strong Absorption Resonance

Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor （1 T1R） resistance random access memory （RRAM） device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state （FIRS） under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament （CF） formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state （LRS） can be easily changed by removing a few trapping states from the conducting path. Hence, a higher FIRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.

The Development of Memory Alloy Satellite-Rocket Separation Device for Commercial Small Satellites

Non-pyrotechnic separation devices have been fully recognized for their high performance and high reliability.The focus of this paper is mainly around the development of memory alloy satellite and rocket separation devices.Due to the increasing demand for small-sized rockets and satellites,some suggestions and experiments for developing this new type of non-pyrotechnic device are proposed and conducted.

Dynamic resistive switching in a three-terminal device based on phase separated manganites

A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state（HRS） to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.

Effect of Switching on Metal-Organic Interface Adhesion Relevant to Organic Electronic Devices

Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs), organic photovoltaic solar cells, organic field effect transistors (OFETs), organic spintronic devices and organic-based Write Once Read Many times (WORM) memory devices on both rigid and flexible substrates in laboratories around the world. The multilayer structure of these devices makes interfaces between dissimilar materials in contact and plays a prominent role in charge transport and injection efficiency which inevitably affect device performance. This paper presents results of an initial study on how switching between voltage thresholds and chemical surface treatment affects adhesion properties of a metal-organic (Au-PEDOT:PSS) contact interface in a WORM device. Contact and Tapping-mode Atomic Force Microscopy (AFM) gave surface topography, phase imaging and interface adhesion properties in addition to SEM/EDX imaging which showed that surface treatment, switching and surface roughness all appeared to be key factors in increasing interface adhesion with implications for increased device performance.

Status and Trends in Advanced SOI Devices and Materials

A review of recently explored effects in advanced SOI devices and materials is given.The effects of key device parameters on the electrical and thermal floating body effects are shown for various device architectures.Recent advances in the understanding of the sensitivity of electron and hole transport to the tensile or compressive uniaxial and biaxial strains in thin film SOI are presented.The performance and physical mechanisms are also addressed in multi-gate Si,SiGe and Ge MOSFETs.New hot carrier phenomena are discussed.The effects of gate misalignment or underlap,as well as the use of the back gate for charge storage in double-gate nanodevices and of capacitorless DRAM are also outlined.

末梢血采集部位轮换记忆器在快速血糖监测中的应用

目的:探讨末梢采血部位轮换记忆器在快速血糖监测中的应用效果。方法:选取2022年6月—10月在我科住院的合并糖尿病需要监测血糖的136例病人作为研究对象,按随机数字表法分为观察组与对照组,比较两组的疼痛视觉模拟评分(VAS)、病人监测血糖的依从性、病人对监测血糖的满意度、护士对使用末梢血采集部位轮换记忆器的满意度。结果:观察组VAS评分低于对照组,病人监测血糖的依从性、病人对监测血糖的满意度明显高于对照组,差异均有统计学意义(P<0.05)。结论:使用该记忆器能明显减轻病人的疼痛,提高病人血糖监测的依从性,且病人及护士对末梢血采集部位轮换记忆器的使用效果满意。

N:ZnO/MoS_(2)-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems

With the merits of non-contact,highly efficient,and parallel computing,optoelectronic synaptic devices combining sensing and memory in a single unit are promising for constructing neuromorphic computing and artificial visual chip.Based on this,a N:ZnO/MoS_(2)-heterostructured flexible optoelectronic synaptic device is developed in this work,and its capability in mimicking the synaptic behaviors is systemically investigated under the electrical and light signals.Versatile synaptic functions,including synaptic plasticity,long-term/short-term memory,and learning-forgetting-relearning property,have been achieved in this synaptic device.Further,an artificial visual memory system integrating sense and memory is emulated with the device array,and the visual memory behavior can be regulated by varying the light parameters.Moreover,the optoelectronic co-modulation behavior is verified by applying mixed electric and light signals to the array.In detail,a transient recovery property is discovered when the electric signals are applied in synergy during the decay of the light response,of which property facilitates the development of robust artificial visual systems.Furthermore,by superimposing electrical signals during the light response process,a differentiated response of the array is achieved,which can be used as a proof of concept for the color perception of the artificial visual system.

形状记忆合金自复位减振装置研制与验证

为改善第二喉道中的可调中心体机构(简称中心体)在工作状态下的流致振动,根据形状记忆合金(shape memory alloy,SMA)偏置双程驱动原理,设计制作一种能够满足中心体有限安装空间要求的SMA自复位减振装置;采用UMAT接口编制的SMA本构关系子程序实现减振装置最大压紧力的数值分析,数值分析与静态调试试验结果误差约为2.58%;搭建地面减振试验平台,测试SMA自复位减振装置分离和闭合状态下的中心体零部件振动响应。减振试验结果显示:SMA自复位减振装置闭合后,中心体振动响应明显降低,在0~100 Hz频带内,均有明显的减振效果,低频至55 Hz范围内,减振率均大于50%。

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor materials.This capability may overcome the short-channel effect,sparking significant advancements in electronic devices that utilize 2D TMDs.Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance.This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor.It delves into the impacts of miniaturization,including the reduction of channel length,gate length,source/drain contact length,and dielectric thickness on transistor operation and performance.In addition,this review provides a detailed analysis of performance parameters such as source/drain contact resistance,subthreshold swing,hysteresis loop,carrier mobility,on/off ratio,and the development of p-type and single logic transistors.This review details the two logical expressions of the single 2D-TMD logic transistor,including current and voltage.It also emphasizes the role of 2D TMD-based transistors as memory devices,focusing on enhancing memory operation speed,endurance,data retention,and extinction ratio,as well as reducing energy consumption in memory devices functioning as artificial synapses.This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices.This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications.It underscores the anticipated challenges,opportunities,and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

形状记忆合金自复位耗能装置滞回性能及简化分析模型

将形状记忆合金(SMA)应用于耗能装置,可限制耗能装置在强震作用下的残余变形,提升装置自复位能力和结构抗震韧性。采用软钢和SMA材料,设计研发一种由内环和外环核心元件组装而成的新型自复位耗能装置。通过建立自复位耗能装置的精细化有限元分析模型和简化分析模型,分析该新型装置在不同内环和外环核心元件参数下的承载能力、耗能能力、自复位能力等滞回性能变化规律,并通过已有试验结果验证精细化有限元分析模型的有效性,进而通过该模型验证简化分析模型的准确性。设计研发的新型装置内环和外环元件可近似为独立工作,自复位耗能机制明确。当内环和外环元件均采用软钢材料时,装置的耗能能力较强,但残余位移极大;当内环元件采用SMA材料、外环元件采用软钢材料时,装置的耗能能力下降较为明显,但残余位移变化不大;当内环元件采用软钢材料、外环元件采用SMA材料时,装置耗能能力下降明显,但残余位移极小。对于内环元件采用软钢材料、外环元件采用SMA材料的装置,内环和外环元件的厚度增大均可显著提升装置的抗侧刚度、承载能力和耗能能力,残余位移会随着内环元件厚度减小或外环厚度增大而减小。在抗震设计时,可根据结构抗震需求,选取元件设计厚度。

氧化锰-氧化铪双层结构阻变存储器交叉阵列的研究

组建了具有5×5交叉阵列结构的Ag/MnO/HfO_(2)/Pt阻变存储器,研究了MnO和HfO_(2)双层结构的电阻转变特性。器件表现出高开关比、低操作电压和无电初始化等稳定的双极性电阻转变特性。电阻转变机制主要为欧姆传导和肖特基发射机制。证明了具有5×5交叉阵列结构的Ag/MnO/HfO_(2)/Pt器件有望成为一种有潜力的阻变存储器候选体系。