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Magnetic and electrical properties of zincblende CrAs
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作者 陈鹏 Takamura K 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第6期2204-2207,共4页
This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 ±0.15μB per CrAs unit.... This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 ±0.15μB per CrAs unit. The temperature dependence of zb-CrAs resistance R shows metallic behaviour. 展开更多
关键词 zincblende molecular-beam epitaxy HALF-METAL
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Energy of a Polaron in a Wurtzite Nitride Finite Parabolic Quantum Well 被引量:11
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作者 赵凤岐 宫箭 《Chinese Physics Letters》 SCIE CAS CSCD 2007年第5期1327-1330,共4页
The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, ... The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-spaee LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron-phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an A1GaAs PQW. This indicates that ehe electron-phonon interaction in a wurtzite nitride PQW is not negligible. 展开更多
关键词 SCATTERING CRYSTALS INN zincblende BARRIERS PHONONS MASS
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Square ZnO nano-column and its thermal evolution 被引量:2
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作者 HUANG BinWang, ZHAN HuaHan, WU YaPing, CHEN XiaoHang & KANG JunYong Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China 《Science China(Technological Sciences)》 SCIE EI CAS 2010年第2期309-312,共4页
Square ZnO nano-columns have been manufactured by molecular beam epitaxy on p-type Si (100) substrate. The morphology and the evolution sequences after thermal annealing were investigated by in-situ scanning tunneling... Square ZnO nano-columns have been manufactured by molecular beam epitaxy on p-type Si (100) substrate. The morphology and the evolution sequences after thermal annealing were investigated by in-situ scanning tunneling microscopy. We associated the morphology and microstructure evolution with the cubic Si (100) substrate, large lattice mismatching, the coexistence of wurtzite and zincblende phases of ZnO, and the thermal effect. 展开更多
关键词 ZNO SQUARE nano-column anneal wurtzite PHASE zincblende PHASE Si (100)
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