The Zr-H bond of zirconocene hydridochloride was heterolyzed at room temperature by five compounds containing nitrogen and hydroxyl group to give Cp(Q)2ZrCl(1) (Cp = cyclopentadienyl and Q = 8-quinolinoyl ) , Cp (Q-Me...The Zr-H bond of zirconocene hydridochloride was heterolyzed at room temperature by five compounds containing nitrogen and hydroxyl group to give Cp(Q)2ZrCl(1) (Cp = cyclopentadienyl and Q = 8-quinolinoyl ) , Cp (Q-Me )2ZrCl (2) , Cp(5,7-Br2Q)2ZrCl(3), Cp2(2-pyridoyl)ZrCl(4) , and Cp(2-aminoethanoyl)2ZrCl(5), which were characterized by elemental analysis, IR, and 1H NMR spectroscopy. The molecular structure of 1 was confirmed by X-ray diffraction determination. The crystal of 1 crystallized monoclinically, space group P21/n a= 0.9004(2), b=1.3961(2), c = 1. 6056(2) nm, β=99. 48(1)°? V=1. 9906 nm3, Z = 4, and Dc=1. 582 g/cm3. The coordination polyhedron around the Zr atom can be described as a distorted octahedron. The Zr-N bonds of 0. 2364(3) and 0. 2377(4) nm suggest that they are coordination bonds. The two planar 8-quinolinoyl groups as bidentate ligands chelate with Zr atom, forming a dihedral angle of 108. 4(1)°?展开更多
采用射频磁控溅射法，在室温Pt／Ti／SiO_2／Si上制备了非晶态Pb(Zr_(0.48)Ti_(0.52))O_3(PZT)薄膜，经不同温度，相同保温时间快速退火处理使其转化为多晶PZT薄膜。用XRD，AFM测定了PZT薄膜的相组分与表面结构，并利用压电响应力显微镜...采用射频磁控溅射法，在室温Pt／Ti／SiO_2／Si上制备了非晶态Pb(Zr_(0.48)Ti_(0.52))O_3(PZT)薄膜，经不同温度，相同保温时间快速退火处理使其转化为多晶PZT薄膜。用XRD，AFM测定了PZT薄膜的相组分与表面结构，并利用压电响应力显微镜(piezoresponse force microsco-py，PFM)观察了初始晶化和高度晶化样品自发极化形成的铁电畴。结果表明：PZT薄膜晶化发生在550℃，PFM可观察到自发形成的圆形铁电畴。650℃处理的样品晶化最充分并呈现出(111)择优取向，用PFM观察到该样品形成具有强烈压电信号的电畴。由此分别算得铁电相占薄膜总体积的(7.8±0.2)％和(97.3±0.2)％。PFM结合XRD，AFM的运用为寻求铁电薄膜晶化机理提供了新的途径。展开更多
基金Supported by the National Natural Science Foundation of China
文摘The Zr-H bond of zirconocene hydridochloride was heterolyzed at room temperature by five compounds containing nitrogen and hydroxyl group to give Cp(Q)2ZrCl(1) (Cp = cyclopentadienyl and Q = 8-quinolinoyl ) , Cp (Q-Me )2ZrCl (2) , Cp(5,7-Br2Q)2ZrCl(3), Cp2(2-pyridoyl)ZrCl(4) , and Cp(2-aminoethanoyl)2ZrCl(5), which were characterized by elemental analysis, IR, and 1H NMR spectroscopy. The molecular structure of 1 was confirmed by X-ray diffraction determination. The crystal of 1 crystallized monoclinically, space group P21/n a= 0.9004(2), b=1.3961(2), c = 1. 6056(2) nm, β=99. 48(1)°? V=1. 9906 nm3, Z = 4, and Dc=1. 582 g/cm3. The coordination polyhedron around the Zr atom can be described as a distorted octahedron. The Zr-N bonds of 0. 2364(3) and 0. 2377(4) nm suggest that they are coordination bonds. The two planar 8-quinolinoyl groups as bidentate ligands chelate with Zr atom, forming a dihedral angle of 108. 4(1)°?
文摘采用射频磁控溅射法，在室温Pt／Ti／SiO_2／Si上制备了非晶态Pb(Zr_(0.48)Ti_(0.52))O_3(PZT)薄膜，经不同温度，相同保温时间快速退火处理使其转化为多晶PZT薄膜。用XRD，AFM测定了PZT薄膜的相组分与表面结构，并利用压电响应力显微镜(piezoresponse force microsco-py，PFM)观察了初始晶化和高度晶化样品自发极化形成的铁电畴。结果表明：PZT薄膜晶化发生在550℃，PFM可观察到自发形成的圆形铁电畴。650℃处理的样品晶化最充分并呈现出(111)择优取向，用PFM观察到该样品形成具有强烈压电信号的电畴。由此分别算得铁电相占薄膜总体积的(7.8±0.2)％和(97.3±0.2)％。PFM结合XRD，AFM的运用为寻求铁电薄膜晶化机理提供了新的途径。
