Zn（O,S）（zinc oxysulfide） is an important chalcogenide material recently reported to be potentially applied as electrode buffers in thin film solar cells. Both vacuum and solution approaches have enabled the fabric...Zn（O,S）（zinc oxysulfide） is an important chalcogenide material recently reported to be potentially applied as electrode buffers in thin film solar cells. Both vacuum and solution approaches have enabled the fabrication of Zn（O,S） films. However they either require extreme conditions and high energy consumption for synthesis, or suffer from lack of controllability mainly due to the thermodynamic and kinetic distinction between Zn O and Zn S during film growth. Here we demonstrated an effective electrodeposition route to obtain high-quality Zn（O,S） thin films in a controllable manner. Importantly, tartaric acid was employed as a secondary complexing agent in the electrolyte to improve the film morphology, as well as to adjust other key properties such as composition and absorption. To elucidate the vital role that tartaric acid played, thermodynamic and kinetic processes of electrodeposition was investigated and discussed in detail. The accumulative contribution has shed light on further exploit of Zn（O,S） with tunable properties and optimization of the corresponding electrodeposition process, for the application in thin film solar cells.展开更多
ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition （MOCVD）. It is observed that when the growth temperature is low, the stoichiometric...ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition （MOCVD）. It is observed that when the growth temperature is low, the stoichiometric ratio between Zn and 0 atoms has a large deviation from the ideal ratio of 1：1. The ZnO grains in the film have small sizes and are not well crystallized, resulting in a poor photoluminescence （PL） property. When the temperature is increased to an appropriate value, the Zn/O ratio becomes optimized, and most of Zn and 0 atoms are combined into Zn-O bonds. Then the film has good crystal quality and good PL property. If the temperature is fairly high, the interracial mutual diffusion of atoms between the substrate and the epitaxial film appears, and the desorption process of the oxygen atoms is enhanced. However, it has no effect on the film property. The film still has the best crystal quality and PL property.展开更多
The scaling behavior and optical properties of Zn（S, O and OH） thin films deposited on sod^-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron...The scaling behavior and optical properties of Zn（S, O and OH） thin films deposited on sod^-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron microscopy and optical properties measurement. From the scaling behaviour, the value of growth scaling exponent β2 0.38±0.06, was determined. This value indicated that the Zn（S, O, OH） film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect. Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions. The energy band gap of the film deposited with 40 min was around 3.63 eV.展开更多
Zn1-xCdx O films are grown on c-sapphire substrates by laser molecular beam epitaxy（LMBE） at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. T...Zn1-xCdx O films are grown on c-sapphire substrates by laser molecular beam epitaxy（LMBE） at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. The a-axis lattice constant of Zn0.95Cd0.05 O is 3.20. Moreover, the epitaxial relationship shows a 30°-in-plane rotation of the film with respect to the c-sapphire substrate. When the substrate temperatures arrives at 500℃, the in situ reflection high-energy electron diffraction（RHEED） pattern of Zn Cd O film shows sharp streaky pattern. The maximum Cd content of Zn Cd O film grown at low substrate temperatures increases up to about 29.6 at.%, which is close to that of the ceramic target. In situ ultraviolet photoelectron spectroscopy（UPS） measurements demonstrate that Zn Cd O film exhibits intense peaks at 4.7 e V and 10.7 e V below the Fermi level, which are assigned to the O 2p and Zn 3p states. Energetic distance between Zn 3d and Cd 4d is 0.60 e V. Above 470 nm, the thin film shows excellent optical transmission.展开更多
Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films i...Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum.These films are characterized for their optical, electricaI and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearIy from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Ωcm to 5.5× 106Ωcm for x=0~0.6. All the samples show cubic structure after annealing in air at 250℃ for 40 min.The lattice constant ao varies from 0.5884 nm to 0.54109 nm linearly.展开更多
Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing （RTA）, and their magnetic properties and crystalline structures were investigated. The samples...Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing （RTA）, and their magnetic properties and crystalline structures were investigated. The samples calcined at and above 600 ℃ have a single-phase spinel structure and the average grain size of the sample calcined at 600 ℃ is about 20 nm. The initial permeability μi, saturation magnetization M and coercivity H of the samples increase with the increasing calcination temperature. The sample calcined at 600 ℃ exhibits an excellent soft magnetic performance, which has μi=33.97 （10 MHz）, Hc=15.62 Oe and Ms=228.877 emu/cm^3. Low-temperature annealing can enhance the magnetic properties of the samples. The work shows that using the sol-gel method in conjunction with RTA is a promising way to fabricate integrated thin-film devices.展开更多
Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the p...Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_（0.8）Cd_（0.2）O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.展开更多
基金funding support from the National Natural Science Foundation of China(21371016)funding support from Young Talent Thousand Program
文摘Zn（O,S）（zinc oxysulfide） is an important chalcogenide material recently reported to be potentially applied as electrode buffers in thin film solar cells. Both vacuum and solution approaches have enabled the fabrication of Zn（O,S） films. However they either require extreme conditions and high energy consumption for synthesis, or suffer from lack of controllability mainly due to the thermodynamic and kinetic distinction between Zn O and Zn S during film growth. Here we demonstrated an effective electrodeposition route to obtain high-quality Zn（O,S） thin films in a controllable manner. Importantly, tartaric acid was employed as a secondary complexing agent in the electrolyte to improve the film morphology, as well as to adjust other key properties such as composition and absorption. To elucidate the vital role that tartaric acid played, thermodynamic and kinetic processes of electrodeposition was investigated and discussed in detail. The accumulative contribution has shed light on further exploit of Zn（O,S） with tunable properties and optimization of the corresponding electrodeposition process, for the application in thin film solar cells.
基金Project supported by the Natural Science Foundation of Shaanxi Province,China (Grant No. 2011JQ6015)the Natural Science Foundation of Shaanxi Provincial Educational Committee,China (Grant No. 09JK740)
文摘ZnO nanocrystalline films are prepared on Si substrates at different temperatures by using metal-organic chemical vapour deposition （MOCVD）. It is observed that when the growth temperature is low, the stoichiometric ratio between Zn and 0 atoms has a large deviation from the ideal ratio of 1：1. The ZnO grains in the film have small sizes and are not well crystallized, resulting in a poor photoluminescence （PL） property. When the temperature is increased to an appropriate value, the Zn/O ratio becomes optimized, and most of Zn and 0 atoms are combined into Zn-O bonds. Then the film has good crystal quality and good PL property. If the temperature is fairly high, the interracial mutual diffusion of atoms between the substrate and the epitaxial film appears, and the desorption process of the oxygen atoms is enhanced. However, it has no effect on the film property. The film still has the best crystal quality and PL property.
基金supported by the National High Technology Research and Development Program of China(Grant No.2004AA513020)the National Basic Research Program of China(Grant No.2010CB933803)the National Natural Science Foundation of China(Grant Nos.60906033,50902074,and 90922037)
文摘The scaling behavior and optical properties of Zn（S, O and OH） thin films deposited on sod^-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements, scanning electron microscopy and optical properties measurement. From the scaling behaviour, the value of growth scaling exponent β2 0.38±0.06, was determined. This value indicated that the Zn（S, O, OH） film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect. Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions. The energy band gap of the film deposited with 40 min was around 3.63 eV.
基金Project supported by the Special Funds from the Ministry of National Science and Technology Major Instrumentation,China(Grant No.2011YQ130018)the Open Foundation of Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology and Research Center of Laser Fusion,China Academy of Engineering Physics(Grant No.12zxjk06)the National High Technology Research and Development Program of China(863 Program)
文摘Zn1-xCdx O films are grown on c-sapphire substrates by laser molecular beam epitaxy（LMBE） at different temperatures. Their crystallographic structures, compositions, surface electronic structures are investigated. The a-axis lattice constant of Zn0.95Cd0.05 O is 3.20. Moreover, the epitaxial relationship shows a 30°-in-plane rotation of the film with respect to the c-sapphire substrate. When the substrate temperatures arrives at 500℃, the in situ reflection high-energy electron diffraction（RHEED） pattern of Zn Cd O film shows sharp streaky pattern. The maximum Cd content of Zn Cd O film grown at low substrate temperatures increases up to about 29.6 at.%, which is close to that of the ceramic target. In situ ultraviolet photoelectron spectroscopy（UPS） measurements demonstrate that Zn Cd O film exhibits intense peaks at 4.7 e V and 10.7 e V below the Fermi level, which are assigned to the O 2p and Zn 3p states. Energetic distance between Zn 3d and Cd 4d is 0.60 e V. Above 470 nm, the thin film shows excellent optical transmission.
文摘Thin films of ZnxCd1-xS have been prepared by electron beam evaporation of a mixture of ZnS & CdS powders. The films are deposited onto sodalime glass slides under similar conditions.The composition of the films is varied from CdS to ZnS (x=0 to 1). The films show a regular change in color from toner red to orange yellow as Zn concentration increases to maximum.These films are characterized for their optical, electricaI and structural properties. The bandgap value of ZnxCd1-xS films is found to vary linearIy from 2.20 eV to 3.44 eV with change in the x value from 0 to 1. The resistivity of these films is in the range of 171.0 Ωcm to 5.5× 106Ωcm for x=0~0.6. All the samples show cubic structure after annealing in air at 250℃ for 40 min.The lattice constant ao varies from 0.5884 nm to 0.54109 nm linearly.
基金the National Natural Science Foundation of China (No. 90607021).
文摘Ni0.4Cu0.2Zn0.4Fe2O4 thin films were fabricated on Si substrates by using the sol-gel method and rapid thermal annealing （RTA）, and their magnetic properties and crystalline structures were investigated. The samples calcined at and above 600 ℃ have a single-phase spinel structure and the average grain size of the sample calcined at 600 ℃ is about 20 nm. The initial permeability μi, saturation magnetization M and coercivity H of the samples increase with the increasing calcination temperature. The sample calcined at 600 ℃ exhibits an excellent soft magnetic performance, which has μi=33.97 （10 MHz）, Hc=15.62 Oe and Ms=228.877 emu/cm^3. Low-temperature annealing can enhance the magnetic properties of the samples. The work shows that using the sol-gel method in conjunction with RTA is a promising way to fabricate integrated thin-film devices.
基金Funded by the National Natural Science Foundation of China(No.51461135004)the Doctoral Fund of Ministry of Education Priority Development Project(No.20130143130002)+1 种基金the Key Technology Innovation Project of Hubei Province(2013AAA005)the Scientific Leadership training Program of Hubei Province
文摘Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_（0.8）Cd_（0.2）O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.
基金the National Natural Science Foundation of China(21273171,21127004,21173168)Scientific Research Program Funded by Shaanxi Provincial Education Department,China(11JK0578,11JS110)~~
文摘利用精密绝热热量仪测定了配合化合物Zn(Met)_3(NO_3)_2·H_2O(s)(Met=L-α-蛋氨酸)在78-371 K温区的摩尔热容.通过热容曲线解析,得到了该配合物的起始脱水温度为T_D=325.10 K.将该温区的摩尔热容实验值用最小二乘法拟合得到了摩尔热容(C_p)对约化温度(T)的多项式方程,由此计算得到了配合物的舒平热容值和热力学函数值.基于设计的热化学循环,选择100 mL 2 mol·L^(-1)HCl溶液为量热溶剂,利用等温环境溶解-反应热量计,得到了298.15 K配合物的标准摩尔生成焓Δ_f H_m^0[Zn(Met)_3(NO_3)_2·H_2O,s]=-(1472.65±0.76)J·mol^(-1).
