The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties ...The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.展开更多
Columbite Zn0.8Co0.2Nb2O6 crystals were grown by optical floating zone methods. The x-ray diffraction(XRD) was used to check the structure information of the grown Zn0.8Co0.2Nb2O6 crystal. The room temperature and tem...Columbite Zn0.8Co0.2Nb2O6 crystals were grown by optical floating zone methods. The x-ray diffraction(XRD) was used to check the structure information of the grown Zn0.8Co0.2Nb2O6 crystal. The room temperature and temperature-dependent Raman spectra were tested to investigate the optical phonon behaviors of columbite Zn0.8Co0.2Nb2O6, which exhibited a temperature stable property. The magnetics properties of Zn0.8Co0.2Nb2O6, measured by a physical property measurement system(PPMS), were also presented in this work.展开更多
Compound Zn2Sn0.8Ti0.2O4 was synthesized by a hydrothermal method in which SnCl4-5H2O,TiCl4,ZnCl2 and N2H4-H2O were used as reactants.The composite Zn2Sn0.8Ti0.2O4/C was then prepared through a carbothermic reduction ...Compound Zn2Sn0.8Ti0.2O4 was synthesized by a hydrothermal method in which SnCl4-5H2O,TiCl4,ZnCl2 and N2H4-H2O were used as reactants.The composite Zn2Sn0.8Ti0.2O4/C was then prepared through a carbothermic reduction process using the as-prepared Zn2Sn0.8Ti0.2O4 and glucose as reactants.The structure,morphology and electrochemical properties of the as-prepared products were investigated by XRD,XPS,TEM and electrochemical measurements.In addition,electrochemical Li insertion/extraction in composite Zn2Sn0.8Ti0.2O4/C were examined by ex situ XRD and SEM.The first discharge capacity of Zn2SnO4 is about 1670.8 mA-h/g,with a capacity retain of 342.7 mA-h/g in the 40th cycle at a constant current density of 100 mA/g in the voltage range of 0.05-3.0 V.Comparing with the Zn2SnO4,some improved electrochemical properties are obtained for Zn2Sn0.8Ti0.2O4,Zn2SnO4/C and Zn2Sn0.8Ti0.2O4/C.The composite Zn2Sn0.8Ti0.2O4/C shows the best electrochemical properties,and its first discharge capacity is about 1530.0 mA-h/g,with a capacity retain of 479.1 mA-h/g the 100th cycle.展开更多
Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the p...Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_（0.8）Cd_（0.2）O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.展开更多
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFA0403704)the National Natural Science Foundation of China(Grant Nos.11304113,11474127,and 11574112)the Fundamental Research Funds for the Central Universities of China
文摘Columbite Zn0.8Co0.2Nb2O6 crystals were grown by optical floating zone methods. The x-ray diffraction(XRD) was used to check the structure information of the grown Zn0.8Co0.2Nb2O6 crystal. The room temperature and temperature-dependent Raman spectra were tested to investigate the optical phonon behaviors of columbite Zn0.8Co0.2Nb2O6, which exhibited a temperature stable property. The magnetics properties of Zn0.8Co0.2Nb2O6, measured by a physical property measurement system(PPMS), were also presented in this work.
基金Project (51004028) supported by the National Natural Science Foundation of China
文摘Compound Zn2Sn0.8Ti0.2O4 was synthesized by a hydrothermal method in which SnCl4-5H2O,TiCl4,ZnCl2 and N2H4-H2O were used as reactants.The composite Zn2Sn0.8Ti0.2O4/C was then prepared through a carbothermic reduction process using the as-prepared Zn2Sn0.8Ti0.2O4 and glucose as reactants.The structure,morphology and electrochemical properties of the as-prepared products were investigated by XRD,XPS,TEM and electrochemical measurements.In addition,electrochemical Li insertion/extraction in composite Zn2Sn0.8Ti0.2O4/C were examined by ex situ XRD and SEM.The first discharge capacity of Zn2SnO4 is about 1670.8 mA-h/g,with a capacity retain of 342.7 mA-h/g in the 40th cycle at a constant current density of 100 mA/g in the voltage range of 0.05-3.0 V.Comparing with the Zn2SnO4,some improved electrochemical properties are obtained for Zn2Sn0.8Ti0.2O4,Zn2SnO4/C and Zn2Sn0.8Ti0.2O4/C.The composite Zn2Sn0.8Ti0.2O4/C shows the best electrochemical properties,and its first discharge capacity is about 1530.0 mA-h/g,with a capacity retain of 479.1 mA-h/g the 100th cycle.
基金Funded by the National Natural Science Foundation of China(No.51461135004)the Doctoral Fund of Ministry of Education Priority Development Project(No.20130143130002)+1 种基金the Key Technology Innovation Project of Hubei Province(2013AAA005)the Scientific Leadership training Program of Hubei Province
文摘Zn_（0.8）Cd_（0.2）O thin films prepared using the spin-coating method were investigated. X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry were employed to illustrate the effects of the pre-heating temperature on the crystalline structure, surface morphology and transmission spectra of Zn_（0.8）Cd_（0.2）O thin films. When the thin films were pre-heated at 150 ℃, polycrystalline Zn O thin films were obtained. When the thin films were pre-heated at temperatures of 200 ℃ or higher, preferential growth of Zn O nanocrystals along the c-axis was observed. Transmission spectra showed that thin films with high transmission in the visible light range were prepared and effective bandgap energies of these thin films decreased from 3.19 e V to 3.08 e V when the pre-heating temperature increased from 150 ℃ to 300 ℃.
