ZnGa2O4 nanowires （NWs） as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as high- performance ultraviolet （UV） photodetectors. A single-nanowire UV ...ZnGa2O4 nanowires （NWs） as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as high- performance ultraviolet （UV） photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity （3,174 A/W） and high external quantum efficiency （1.1 - 106%） at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate （PET） substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices.展开更多
基金This work was supported by the National Natural Science Foundation of China （No. 61377033）.
文摘ZnGa2O4 nanowires （NWs） as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as high- performance ultraviolet （UV） photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity （3,174 A/W） and high external quantum efficiency （1.1 - 106%） at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate （PET） substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices.
