ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning elec...ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning electron microscope(FE-SEM),X-ray photoelectron spectroscopy(XPS),ultraviolet-visible spectrometer(UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.展开更多
基金Project supported by the National Natural Science Foundation of China (No. 51072181)the Doctoral Fund of Ministry of Education of China (No. 20090101110044)
文摘ZnNiO thin films with different contents of Ni(0-10 at.%) were fabricated on quartz and Si(100) substrates by pulsed laser deposition(PLD).We measured the samples by X-ray diffraction(XRD),field-emission scanning electron microscope(FE-SEM),X-ray photoelectron spectroscopy(XPS),ultraviolet-visible spectrometer(UV-VIS),and Hall testing.When the Ni contents were below 3 at.%,partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases,which enhanced the conductivity of the film.When the Ni contents were above 3 at.%,Ni ions were at the interstitial sites,and Ni-related clusters and defects were able to emerge in the films,resulting in a worsening of electrical and optical properties.A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.
