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Recent Advances in the Preparation, Characterization and Applications of Locust Bean Gum-Based Films 被引量:2
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作者 Limin Yuan Yuejie Wu +2 位作者 Yan Qin Huimin Yong Jun Liu 《Journal of Renewable Materials》 SCIE EI 2020年第12期1565-1579,共15页
Locust bean gum(LBG)is a typical galactomannan isolated from carob bean(Ceratonia siliqua L.)cultivated in the Mediterranean area.Due to its superior biodegradable,rheological and film-forming properties,LBG has been... Locust bean gum(LBG)is a typical galactomannan isolated from carob bean(Ceratonia siliqua L.)cultivated in the Mediterranean area.Due to its superior biodegradable,rheological and film-forming properties,LBG has been used alone or combined with other biopolymers(e.g.,polysaccharides,proteins and lipids)to develop films.Till now,different kinds of functional ingredients(e.g.,montmorillonite,bacteriocins,antibiotics,plant extract,essential oils and microbial cells)have been added into LBG-based films.Notably,the physical and functional properties of LBG-based films are affected by many factors,such as the structure of LBG,the type and content of other biopolymers and functional ingredients,and the physical treatment of film-forming solution.LBG-based films can be not only used as active packaging and edible coating in food industry but also used as wound dressings in pharmaceutical industry.For the first time,this review focuses on the recent advances in the preparation,characterization,physical and functional properties,and potential applications of LBG-based films. 展开更多
关键词 Locust bean gum film preparation CHARACTERIZATION application
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Preparation and Characterization of Highly Oriented ZnO Film by Ultrasonic Assisted SILAR Method 被引量:1
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作者 高相东 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2005年第3期23-26,共4页
Ultrasonic Assisted SILAR method (UA-SILAR) was developed and highly oriented ZnO films were deposited on the glass substrate by this novel technique. The crystallinity and microstructure of as-deposited ZnO films w... Ultrasonic Assisted SILAR method (UA-SILAR) was developed and highly oriented ZnO films were deposited on the glass substrate by this novel technique. The crystallinity and microstructure of as-deposited ZnO films were analyzed by means of XRD and SEM. Moreover, the underling deposition mechanism of ZnO films was discussed. Results show that obtained ZnO films exhibit an excellent crystallinity with the preferentioal orientation of (002) plane. The crystalline grain of films is about 40nm in size,which is supported by both the Sherrer equation and the SEM result. However, the ZnO film is composed of numerous clustered purticulates in the size of 200 to 300nm, and each particulate is the compact aggregation of smaller ZnO crystalline grains. It is .speculated that the excellent crystallinity of ZnO films may chiefly originate from the cavatition effect of the ultrasonic rinsing process. 展开更多
关键词 zno films U4- SILAR preparation
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Preparation and optical characteristics of ZnO films by chelating sol-gel method 被引量:2
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作者 YANGLirong JINZhengguo BUShaojing SUNYingchun CHENGZhijie 《Rare Metals》 SCIE EI CAS CSCD 2004年第3期214-219,共6页
The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quart... The effect of different annealing temperatures on the structure, morphology,and optical properties of ZnO thin films prepared by the chelating sol-gel method was investigated.Zinc-oxide thin films were coated on quartz glass substrates by dip coating. Zinc nitrate, absoluteethanol, and citric acid were used as precursor, solvent, and chelating agent, respectively. Theresults show that ZnO films derived from zinc-citrate have lower crystallization temperature (below400℃), and that the crystal structure is wurtzite. The films, treated over 500℃, consist ofnano-particles and show to be porous at 600℃. The particle size of the film increases with theincrease of the annealing temperature. The largest particle size is 60 nm at 600℃. The opticaltransmittances related to the annealing temperatures become 90% higher in the visible range. Thefilm shows a starting absorption at 380 nm, and the optical band-gap of the thin film (fired at500℃) is 3.25 eV and close to the intrinsic band-gap of ZnO (3.2 eV). 展开更多
关键词 zno thin films preparation and optical properties chelating sol-gel method citric acid
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P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films
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作者 靳玉平 张斌 +1 位作者 王建中 施立群 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第5期119-122,共4页
P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering (non-RBS) spectroscopy... P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering (non-RBS) spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of +8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen (No) is an effective acceptor in the ZnO:N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy (Vo) defects in the ZnO:N films. The p-type doping mechanism is briefly discussed. 展开更多
关键词 zno in or as In P-Type Nitrogen-Doped zno films Prepared by In-Situ Thermal Oxidation of Zn3N2 films of by
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A mini-review of MXene porous films:Preparation,mechanism and application 被引量:17
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作者 Yali Zhang Yi Yan +3 位作者 Hua Qiu Zhonglei Ma Kunpeng Ruan Junwei Gu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第8期42-49,共8页
MXene presents excellent electrical conductivity,abundant surface functional groups and wonderful filmforming performance,but the lamellar layers are prone to self-stacking during film formation,which will reduce the ... MXene presents excellent electrical conductivity,abundant surface functional groups and wonderful filmforming performance,but the lamellar layers are prone to self-stacking during film formation,which will reduce the loss of electromagnetic waves,hinder ion transmission,and limit the effective load of other functional materials.The construction of the porous structure can effectively solve the self-stacking problem of MXene sheets.This article reviews the research progress of MXene porous films for electromagnetic interference(EMI)shielding,lithium/sodium ion batteries,pseudocapacitors,and biomedical science applications.It focuses on the preparation methods of MXene porous films,and discusses the pore-forming mechanism of the porous structure formed by different preparation methods and the internal relationship between the“microstructure-macroscopic performance”of the MXene porous films,points out the key scientific and technical bottlenecks that need to be solved urgently in the preparation and application of the MXene porous films.It is hoped to provide certain guidance for the design,preparation,optimization,industrial application,and development of MXene porous films. 展开更多
关键词 MXene porous films preparation method Pore formation mechanism application fields
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Composite structure of ZnO films coated with reduced graphene oxide: structural,electrical and electrochemical properties
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作者 Weiqiang Shuai Yuehui Hu +5 位作者 Yichuan Chen Keyan Hu Xiaohua Zhang Wenjun Zhu Fan Tong Zixuan Lao 《Journal of Semiconductors》 EI CAS CSCD 2018年第2期22-27,共6页
ZnO films coated with reduced graphene oxide(RGO-ZnO) were prepared by a simple chemical approach. The graphene oxide(GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps(ex... ZnO films coated with reduced graphene oxide(RGO-ZnO) were prepared by a simple chemical approach. The graphene oxide(GO) films transferred onto ZnO films by spin coating were reduced to RGO films by two steps(exposed to hydrazine vapor for 12 h and annealed at 600 °C). The crystal structures, electrical and photoluminescence properties of RGO-ZnO films on quartz substrates were systematically studied. The SEM images illustrated that RGO layers have successfully been coated on the ZnO films very tightly. The PL properties of RGO-ZnO were studied. PL spectra show two sharp peaks at 390 nm and a broad visible emission around 490 nm.The resistivity of RGO-ZnO films was measured by a Hall measurement system, RGO as nanofiller considerably decrease the resistivity of ZnO films. An electrode was fabricated, using RGO-ZnO films deposited on Si substrate as active materials, for super capacitor application. By comparison of different results, we conclude that the RGOZnO composite material couples possess the properties of super capacitor. 展开更多
关键词 RGO-zno films spin coating electrode super capacitor application
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Structural, Optical and Luminescence Properties of ZnO Thin Films Prepared by Sol-Gel Spin-Coating Method: Effect of Precursor Concentration 被引量:1
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作者 R.Amari A.Mahroug +2 位作者 A.Boukhari B.Deghfel N.Selmi 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第1期63-67,共5页
Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2&... Transparent zinc oxide(ZnO) thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations(0.3-1.2 M) using zinc acetate dehydrate [Zn(CH_3COO)_2·2H_2O] as precursor and isopropanol and monoethanolamine(MEA) as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data. 展开更多
关键词 zno Optical and Luminescence Properties of zno Thin films Prepared by Sol-Gel Spin-Coating Method Structural
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ZnO薄膜及其性能研究进展 被引量:21
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作者 黄焱球 刘梅冬 +1 位作者 曾亦可 刘少波 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2001年第3期391-397,共7页
ZnO薄膜是一种具有优良的压电、光电、气敏、压敏等性质的材料,在透明导体、发光元件、太阳能电池窗口材料、光波导器、单色场发射显示器材料、高频压电转换器、表面声波元件、微传感器以及低压压敏电阻器等方面具有广泛的用途.Z... ZnO薄膜是一种具有优良的压电、光电、气敏、压敏等性质的材料,在透明导体、发光元件、太阳能电池窗口材料、光波导器、单色场发射显示器材料、高频压电转换器、表面声波元件、微传感器以及低压压敏电阻器等方面具有广泛的用途.ZnO 薄膜的制备方法多样,各具优缺点;而薄膜性质的差异则取决于不同的掺杂组分,并与制备工艺紧密相关.本文综述了ZnO薄膜的制备及性质特征,并对其发展趋势及前景进行了探讨. 展开更多
关键词 制备 氧化锌薄膜 射频溅射 双离子束溅射沉积 电子束蒸发沉积 CVD SOL-GEL 光电性质
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纳米ZnO/PVC保鲜膜抑菌性能及应用研究 被引量:8
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作者 李喜宏 李伟丽 +2 位作者 张培培 张兴亮 刘丽杰 《包装工程》 CAS CSCD 北大核心 2009年第10期5-7,17,共4页
研究了钠米ZnO/PVC膜对大肠杆菌和金黄色葡萄球菌的体外抑菌作用及对苹果切片防腐保鲜效果,以及纳米ZnO含量、溶液pH值、培养条件(无光和光照)等对纳米膜抑菌能力的影响。结果表明:添加纳米ZnO/PVC膜的菌悬液,光照振荡培养4h,大肠杆菌... 研究了钠米ZnO/PVC膜对大肠杆菌和金黄色葡萄球菌的体外抑菌作用及对苹果切片防腐保鲜效果,以及纳米ZnO含量、溶液pH值、培养条件(无光和光照)等对纳米膜抑菌能力的影响。结果表明:添加纳米ZnO/PVC膜的菌悬液,光照振荡培养4h,大肠杆菌菌落总数减少大半;纳米膜中ZnO粒子含量越高,抑菌效果越好,且该膜对金黄色葡萄球菌的抑制作用高于大肠杆菌;纳米ZnO/PVC膜在不同酸碱度环境中抑菌性能稳定;纳米ZnO/PVC包装可以延缓苹果切片的褐变、腐烂,保持生理品质,常温贮藏3d,果实总酚含量高于对照组。 展开更多
关键词 纳米zno PVC膜 抑菌性能 包装 应用
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纳米ZnO的制备与应用 被引量:8
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作者 王岳 吴新民 陈晓黎 《信阳师范学院学报(自然科学版)》 CAS 北大核心 2005年第3期346-349,共4页
介绍了纳米氧化锌的一些化学制备方法,结合现有的报道,讨论了纳米氧化锌的应用及前景.纳米氧化锌材料的特殊性能在应用开发中正得到充分展示,同时,纳米氧化锌的应用领域也在不断扩大.
关键词 纳米zno 制备 应用 开发
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ZnO薄膜的研究与开发应用进展 被引量:13
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作者 吕建国 陈汉鸿 叶志镇 《压电与声光》 CSCD 北大核心 2002年第6期463-467,共5页
ZnO是一种新型的 - 族半导体材料。该文介绍了ZnO薄膜的晶格、光学以及电学特性,对其生长技术和开发应用等方面的进展也作了综述,并展望了ZnO薄膜的发展前景。
关键词 zno薄膜 生长技术 开发应用 氧化锌 半导体材料 薄膜特性
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具有C轴取向Al^(3+)掺杂型ZnO薄膜的溶胶-凝胶法制备及其性能研究 被引量:3
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作者 郑春满 宋植彦 +2 位作者 魏海博 帖楠 谢凯 《国防科技大学学报》 EI CAS CSCD 北大核心 2012年第3期33-37,共5页
以乙二醇甲醚为溶剂,采用Sol-Gel法制备出具有C轴取向、可导电的Al3+离子掺杂ZnO透明薄膜,并利用场发射扫描电镜、X-射线衍射、能谱分析、标准四探针和反射光谱仪等对薄膜的组成、结构和光学性能进行了分析。结果表明:Al3+离子掺杂ZnO... 以乙二醇甲醚为溶剂,采用Sol-Gel法制备出具有C轴取向、可导电的Al3+离子掺杂ZnO透明薄膜,并利用场发射扫描电镜、X-射线衍射、能谱分析、标准四探针和反射光谱仪等对薄膜的组成、结构和光学性能进行了分析。结果表明:Al3+离子掺杂ZnO薄膜为六方纤锌矿型结构,由六棱柱状阵列构成,具有C轴择优取向;薄膜电阻率随Al3+离子掺杂浓度的升高而降低;在可见光区域,薄膜透光率随Al3+离子掺杂浓度的升高而降低,掺杂3%ZnO薄膜的透光率达到90%左右,禁带宽度为3.25 eV,具备制作薄膜太阳能电池透明导电电极材料的应用价值。 展开更多
关键词 溶胶-凝胶 zno薄膜 Al3+离子掺杂 制备
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ZnO薄膜的制备方法、性质和应用 被引量:9
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作者 王光伟 张建民 +1 位作者 郑宏兴 杨斐 《真空》 CAS 北大核心 2008年第5期54-61,共8页
介绍了宽禁带半导体ZnO薄膜的制备工艺、主要性质和器件应用等几方面内容。ZnO薄膜的制备方法大致分为物理法和化学法。前者主要包括溅射、脉冲激光沉积和分子束外延等;后者则涵盖化学气相沉积、喷雾热解和溶胶-凝胶法等。从晶体结构、... 介绍了宽禁带半导体ZnO薄膜的制备工艺、主要性质和器件应用等几方面内容。ZnO薄膜的制备方法大致分为物理法和化学法。前者主要包括溅射、脉冲激光沉积和分子束外延等;后者则涵盖化学气相沉积、喷雾热解和溶胶-凝胶法等。从晶体结构、光学及电学等角度概述了ZnO薄膜的主要性质。与这些性质相联系的器件应用有太阳能电池、发光器件和紫外探测器等。对器件应用领域中存在的一些问题及其解决思路作了探讨。 展开更多
关键词 zno薄膜 制备工艺 光电特性 光电器件
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四针状ZnO晶须制备及应用的研究现状 被引量:6
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作者 胡创 李沪萍 +1 位作者 罗康碧 王博一 《化工科技》 CAS 2009年第5期69-73,共5页
四针状氧化锌晶须(简称T-ZnO_w)是一种立体四针状、具有规整三维空间结构的晶须。作者将国内外一些常见的T-ZnO_w的制备方法进行了分类综述;根据T-ZnO_w的特性,综述了其在复合材料的增强、耐磨防滑、导电及抗静电、耐火及减振作用等方... 四针状氧化锌晶须(简称T-ZnO_w)是一种立体四针状、具有规整三维空间结构的晶须。作者将国内外一些常见的T-ZnO_w的制备方法进行了分类综述;根据T-ZnO_w的特性,综述了其在复合材料的增强、耐磨防滑、导电及抗静电、耐火及减振作用等方面的应用现状。 展开更多
关键词 zno晶须 T-znoW 制备 应用
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纳米ZnO薄膜的制备 被引量:2
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作者 宋淑芳 李健 季秉厚 《内蒙古大学学报(自然科学版)》 CAS CSCD 北大核心 2001年第5期504-507,共4页
采用真空气相沉积法 ,使用两种蒸发源制备纳米 Zn O薄膜 .用 XRD( X射线衍射 )进行测试并进行其结构特性分析 .研究发现 ,蒸发源为分析纯 Zn粉末时 ,蒸发可获得纳米 Zn薄膜 ,薄膜在氧气气氛下同时进行氧化及热处理 .实验发现 ,当温度高... 采用真空气相沉积法 ,使用两种蒸发源制备纳米 Zn O薄膜 .用 XRD( X射线衍射 )进行测试并进行其结构特性分析 .研究发现 ,蒸发源为分析纯 Zn粉末时 ,蒸发可获得纳米 Zn薄膜 ,薄膜在氧气气氛下同时进行氧化及热处理 .实验发现 ,当温度高于 4 0 0℃ ,得到沿 c轴择优取向的纳米 Zn O薄膜 .蒸发源为分析纯 Zn O粉末时 ,采用钼舟加热 ,高温下 Zn O与钼舟发生反应 ,使部分 Zn O还原为 Zn,因此这种方法不适合纳米 Zn 展开更多
关键词 纳米zno薄膜 真空气相沉积 制备 纳米技术 氧化锌薄膜 热处理 蒸发源
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ZnO基透明导电薄膜的制备和掺杂改性研究进展 被引量:3
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作者 陈磊 黄新友 +3 位作者 孙景峰 谢逊 冯梦现 高春华 《中国陶瓷》 CAS CSCD 北大核心 2016年第12期7-11,共5页
ZnO基透明导电膜的研究进展迅速,其光电性能已接近锡掺杂铟氧化物透明导电薄膜(ITO),而且它相比ITO薄膜易于掺杂、更易刻蚀、在等离子体中稳定性好,未来有望成为平板显示器中取代ITO薄膜的材料。概述了氧化锌基透明导电膜的制备方法和... ZnO基透明导电膜的研究进展迅速,其光电性能已接近锡掺杂铟氧化物透明导电薄膜(ITO),而且它相比ITO薄膜易于掺杂、更易刻蚀、在等离子体中稳定性好,未来有望成为平板显示器中取代ITO薄膜的材料。概述了氧化锌基透明导电膜的制备方法和掺杂改性研究进展,对单层膜和多层膜的制备进行了分析,对氧化锌基透明导电膜的研究趋势进行了展望。 展开更多
关键词 氧化锌 透明导电薄膜 制备方法 掺杂改性 研究进展
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ZnO及掺杂ZnO薄膜的研究进展 被引量:4
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作者 赵跃智 张俊 丁世敬 《化工科技》 CAS 2008年第2期60-64,共5页
ZnO薄膜是一种Ⅱ-Ⅵ族的宽禁带半导体材料,具有优异的物理化学性能。通过对薄膜的掺杂,可以改善其性能或赋予其新的性能,使其应用更加广泛。作者综述了ZnO薄膜的制备方法,比较了各种制备方法的优缺点,重点探讨了ZnO及其掺杂薄膜在... ZnO薄膜是一种Ⅱ-Ⅵ族的宽禁带半导体材料,具有优异的物理化学性能。通过对薄膜的掺杂,可以改善其性能或赋予其新的性能,使其应用更加广泛。作者综述了ZnO薄膜的制备方法,比较了各种制备方法的优缺点,重点探讨了ZnO及其掺杂薄膜在压电、光电、气敏及磁性能方面的研究,并对今后的研究方向进行了展望。 展开更多
关键词 掺杂zno薄膜 制备工艺 性能
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制备工艺对p型ZnO薄膜微观结构和电学特性的影响 被引量:1
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作者 丁瑞钦 陈毅湛 +6 位作者 朱慧群 黎扬钢 丁晓贵 杨柳 黄鑫钿 齐德备 谭军 《人工晶体学报》 EI CAS CSCD 北大核心 2008年第5期1237-1241,1272,共6页
本文报道溅射工艺、退火工艺和冷却方式对磷扩散法制备的p型ZnO薄膜的微观结构和电学特性的影响的实验研究。研究结果表明,ZnO薄膜的表面形貌、结晶度、内应力以及电学特性均与制备工艺条件有密切的关系。文章对这些关系的机理做了探讨... 本文报道溅射工艺、退火工艺和冷却方式对磷扩散法制备的p型ZnO薄膜的微观结构和电学特性的影响的实验研究。研究结果表明,ZnO薄膜的表面形貌、结晶度、内应力以及电学特性均与制备工艺条件有密切的关系。文章对这些关系的机理做了探讨和分析。 展开更多
关键词 zno薄膜 工艺条件 微观结构 电学特性
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激光分子束外延工艺用ZnO陶瓷靶材的研究 被引量:3
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作者 贺永宁 朱长纯 +1 位作者 候洵 杨晓东 《硅酸盐学报》 EI CAS CSCD 北大核心 2005年第3期299-303,共5页
由改进的电子陶瓷工艺制备了ZnO(99.99%)高纯陶瓷靶材。用激光分子束外延(lasermolecularbeamepitaxy,L MBE))工艺,采用 这种靶材在蓝宝石基片上较低温度下生长了高结晶质量的ZnO半导体光电子薄膜。研究了ZnO高纯陶瓷靶材的烧结机理、... 由改进的电子陶瓷工艺制备了ZnO(99.99%)高纯陶瓷靶材。用激光分子束外延(lasermolecularbeamepitaxy,L MBE))工艺,采用 这种靶材在蓝宝石基片上较低温度下生长了高结晶质量的ZnO半导体光电子薄膜。研究了ZnO高纯陶瓷靶材的烧结机理、微观结构及形貌, 认为靶材的后期烧结速率主要决定于氧空位扩散机制。根据辐照后靶材的电镜分析结果,对L MBE工艺中靶材表面与脉冲激光相互作用过 程中等离子体羽辉的形成过程及其动力学特征进行了研究,认为该等离子体羽辉是激光支持的燃烧波,其波前传播速度为亚声速并且沿靶材 法线方向,粒子的动力学特征使得L MBE工艺适于ZnO薄膜的二维平面生长。 展开更多
关键词 氧化锌陶瓷 激光分子束外延 脉冲激光辐照效应 外延薄膜制备 激光脉冲沉积技术 生长方法
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ZnO-TiO_2纳米复合物的制备及应用研究 被引量:8
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作者 李露 张云怀 肖鹏 《材料导报(纳米与新材料专辑)》 EI 2009年第2期165-168,共4页
目前ZnO-TiO_2纳米复合材料引起了人们的广泛关注。介绍了ZnO-TiO_2纳米复合材料的制备方法,重点介绍了其在光催化、催化剂、太阳能电池、传感、防护紫外线等方面的应用,并对其发展前景进行了展望。
关键词 zno-TiO2纳米复合物制备应用
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