In this paper,ultra-long and large-scaled ZnO microwire arrays are grown by the chemical vapor deposition method,and a single ZnO microwire-based non-balanced electric bridge ethanol gas sensor is fabricated.The exper...In this paper,ultra-long and large-scaled ZnO microwire arrays are grown by the chemical vapor deposition method,and a single ZnO microwire-based non-balanced electric bridge ethanol gas sensor is fabricated.The experimental results show that the gas sensor has good repeatability,high response rate,short response,and recovery time at room temperature(25℃).The response rate of the gas sensor exposed to 90-ppm ethanol is about 93%,with a response time and recovery time are 0.3 s and 0.7 s respectively.As a contrast,the traditional resistive gas sensor of a single ZnO microwire shows very small gas response rate.Therefore,ethanol gas sensor based on non-balanced electric bridge can obviously enhance gas sensing characteristics,which provides a feasible method of developing the high performance ZnO-based gas sensor.展开更多
One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can tra...One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574026 and 11405017)the Liaoning Provincial Natural Science Foundation,China(Grant No.201602453)
文摘In this paper,ultra-long and large-scaled ZnO microwire arrays are grown by the chemical vapor deposition method,and a single ZnO microwire-based non-balanced electric bridge ethanol gas sensor is fabricated.The experimental results show that the gas sensor has good repeatability,high response rate,short response,and recovery time at room temperature(25℃).The response rate of the gas sensor exposed to 90-ppm ethanol is about 93%,with a response time and recovery time are 0.3 s and 0.7 s respectively.As a contrast,the traditional resistive gas sensor of a single ZnO microwire shows very small gas response rate.Therefore,ethanol gas sensor based on non-balanced electric bridge can obviously enhance gas sensing characteristics,which provides a feasible method of developing the high performance ZnO-based gas sensor.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074148,61875194,11727902,12074372,11774341,11974344,61975204,and 11804335)the National Ten Thousand Talent Program for Young Topnotch Talents,the Key Research and Development Program of Changchun City(Grant No.21ZY05)+2 种基金the 100 Talents Program of the Chinese Academy of Sciences,Youth Innovation Promotion Association,CAS(Grant No.2020225)Jilin Province Science Fund(Grant No.20210101145JC)XuGuang Talents Plan of CIOMP。
文摘One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.
基金supported by the National Natural Science Foundation of China(11974182,12374257)the Fundamental Research Funds for the Central Universities(NC2022008)+1 种基金the Funding for Outstanding Doctoral Dissertation of Nanjing University of Aeronautics and Astronautics(NUAA)(BCXJ22-14)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX22_0326)。
文摘高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参数包括约7个量级的开关比、292.2 mA W^(-1)的响应度、6.9×10^(13)Jones的比探测率,以及微秒量级的快速响应速度(上升时间16.4μs,下降时间465.1μs).特别是10μW cm^(-2)的微弱紫外光时接近99.3%的外量子效率.此外,本文系统研究了MgO纳米薄膜和表面修饰AgNWs对探测器件性能增强的机理.作为自驱动光接收器,该光电二极管被进一步集成到能够实时传输信息的紫外通信系统中.此外,基于AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO的同质结9×9阵列显示出均匀的光响应分布,可用作具有良好空间分辨率的成像传感器.这项研究有望为设计高性能紫外光检测器提供一条具有低功耗和可大规模建造的途径.
