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Synthesis and Properties of Mg-doped ZnO Nanobelts
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作者 LIU Hang ZHUANG Hui-zhao XUE Cheng-shan WANG Jie LI Jun-lin 《Semiconductor Photonics and Technology》 CAS 2009年第4期225-228,251,共5页
The chemical vapor deposition(CVD)growth method is applicable to produce high-yield single-crystalline ZnO nanobelts.The Mg-doped ZnO nanobelts with a smooth surface have been successfully synthesized.The morphology,m... The chemical vapor deposition(CVD)growth method is applicable to produce high-yield single-crystalline ZnO nanobelts.The Mg-doped ZnO nanobelts with a smooth surface have been successfully synthesized.The morphology,microstructure and optical properties of the ZnO nanobelts were analyzed by X-ray diffraction(XRD),scanning electron microscope(SEM),transmission electron microscope(TEM),selective area electron diffraction(SAED),energy dispersive X-ray spectroscopy(EDS)and photoluminescence(PL)spectroscopy.Results reveal that the ZnO nanobelts possess good crystalline quality.The special formation mechanism of crystal growth is discussed,emphasizing the effect of polar orientation on the nucleation and growth of the ZnO nanobelts. 展开更多
关键词 Mg-doped zno nanobelts chemical vapour deposition method of crystal growth
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Single-electron pumping in a ZnO single-nanobelt quantum dot transistor
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作者 Hassan Ali Jing Tang +9 位作者 Kai Peng SiBai Sun Attia Falak FeiLong Song ShiYao Wu ChenJiang Qian Meng Wang XiTian Zhang Muhammad Aftab Rafiq XiuLai Xu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2020年第6期97-104,共8页
Diluted magnetic semiconductors(DMSs)have traditionally been employed to implement spin-based quantum computing and quantum information processing.However,their low Curie temperature is a major hurdle in their use in ... Diluted magnetic semiconductors(DMSs)have traditionally been employed to implement spin-based quantum computing and quantum information processing.However,their low Curie temperature is a major hurdle in their use in this field,which creates the necessity for wide bandgap DMSs operating at room temperature.In view of this,a single-electron transistor(SET)with a global back-gate was built using a wide bandgap ZnO nanobelt(NB).Clear Coulomb oscillations were observed at 4.2 K.The periodicity of the Coulomb diamonds indicates that the Coulomb oscillations arise from single quantum dots of uniform size,whereas quasi-periodic Coulomb diamonds correspond to the contribution of multi-dots present in the ZnO NB.By applying an AC signal to the global back-gate across a Coulomb peak with varying frequencies,single-electron pumping was observed;the increase in current was equal to the production of electron charge and frequency.The current accuracy of about 1%for both single-and double-electron pumping was achieved at a high frequency of 25 MHz.This accurate single-electron pumping makes the ZnO NB SET suitable for single-spin injection and detection,which has great potential for applications in quantum information technology. 展开更多
关键词 zno nanobelt Coulomb blockade quantum dot transistor single-electron pumping
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