Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine...Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO_2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm~^-2,it exhibits a current on/off ratio of 2.4×10^5,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm^2/（V·s）.展开更多
基金Project supported by the National Science Foundation of China(Nos.50730008,60807008)the Doctoral Fund of Hebei Normal University of Science and Technology(No.2009YB007)
文摘Dense,uniform ZnO nanowire（NW） networks are prepared by using a simple and sufficient selfassembly method.In this method,ZnO NWs are modified with aminopropyltriethoxysilane（APTES） to form positively charged amine-terminated surfaces.The modified ZnO NWs are adsorbed on negatively charged SiO_2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution.Field-effect transistors （FETs） are fabricated and studied based on the ZnO NW networks.For a typical device with an NW density of 2.8μm~^-2,it exhibits a current on/off ratio of 2.4×10^5,a transconductance of 336 nS,and a field-effect mobility of 27.4 cm^2/（V·s）.
