ZnO films with low resistivity and high transmittance in the visible optical region were deposited on GaAs and glass substrates by MOCVD at atmospheric pressure using diethyl zinc and tetrahydrofuran as precursors.The...ZnO films with low resistivity and high transmittance in the visible optical region were deposited on GaAs and glass substrates by MOCVD at atmospheric pressure using diethyl zinc and tetrahydrofuran as precursors.The X ray diffraction results revealed that ZnO epilayer on GaAs showed good crystalline character and exhibited (002) orientation with the c axis perpendicular to the substrate surface.The resistivity of ZnO films in the range from 10 -3 ～10 -2 Ω·cm was found to be dependent upon the initial partial pressure of diethyl zinc and tetrahydrofuran.展开更多
ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on ...ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.展开更多
The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-gene...The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite （CsPbBr3, CPB）. The devices have electric field-induced bipolar resistive switching （ReS） and memory behaviors with a large on/off ratio （〉105）, low working voltage （〈1 V） and energy consumption, long data retention （〉104 s）, and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed （〈1 ms）, which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.展开更多
文摘ZnO films with low resistivity and high transmittance in the visible optical region were deposited on GaAs and glass substrates by MOCVD at atmospheric pressure using diethyl zinc and tetrahydrofuran as precursors.The X ray diffraction results revealed that ZnO epilayer on GaAs showed good crystalline character and exhibited (002) orientation with the c axis perpendicular to the substrate surface.The resistivity of ZnO films in the range from 10 -3 ～10 -2 Ω·cm was found to be dependent upon the initial partial pressure of diethyl zinc and tetrahydrofuran.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51002010 and 11274040)
文摘ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.
文摘The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite （CsPbBr3, CPB）. The devices have electric field-induced bipolar resistive switching （ReS） and memory behaviors with a large on/off ratio （〉105）, low working voltage （〈1 V） and energy consumption, long data retention （〉104 s）, and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed （〈1 ms）, which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.
