Dielectric spectroscopy studies of ZnO single crystal

Dielectric relaxation and charge transport induced by electron hopping in ZnO single crystal are measured by using a novocontrol broadband dielectric spectrometer. Typical Debye-like dielectric relaxation originating from electronic hopping between electronic traps and conductive band in surface Schottky barrier region is observed for ZnO single crystal-Au electrode system. However, after insulation of ZnO single crystal by heat treatment in rich oxygen atmosphere, dielectric relaxation and alternating current conductance are observed simultaneously in the dielectric spectra, implying that dielectric relaxation and charge transport can be induced simultaneously by electronic hopping at high temperature in an ordered system. The intrinsic correlation between local dielectric relaxation and long range charge transport offers us a new method to explore complicated dielectrics.

Ionoluminescence Spectra of a ZnO Single Crystal Irradiated with 2.5MeV H^＋ Ions

The ionoluminescence （IL） spectra of a ZnO single crystal irradiated with 2.5？MeV H＋＋ ions reveal that its intensity decreases with increasing the ion fluence, which indicates that the concentration of luminescence centers decreases with irradiation. The Gaussian decomposition results of the ZnO IL spectrum with a fluence of 1.77×10^11ions/cm^2 show that the spectrum is a superposition of energy levels centered at 1.75eV, 2.10eV, 3.12eV and 3.20eV. The four peaks are associated with electronic transitions from CB to VZnZn, CB to Oii, Znii to VB and the decay of self-trapped excitons, respectively. The results of single-exponential fitting demonstrate that different luminescent centers have different radiation resistance, which may explain why the emission decreases more slowly in the NBE band than in the DBE band. The agglomeration of larger point clusters accounts for the decrease in the concentration of luminescence centers and the increase in the concentration of non-luminescence centers, which indicates that the defect clusters induced by ion implantation act as nonradiative recombination centers and suppress light emission. The results of the photoluminescence spectra of a virgin ZnO single crystal and a ZnO single crystal irradiated with a fluence of 3.4××10^14ions/cm^2 show that compared with the virgin ZnO, the emission intensity of irradiated ZnO decreases by nearly two orders of magnitude, which demonstrates that the irradiation effect reduces radiative recombination and enhances nonradiative recombination. The conclusions of photoluminescence are consistent with the IL results.

Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

In this paper, we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence. Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies. The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm^2 become stronger, whereas for those deteriorated by irradiation above 200 mJ/cm^2, the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV, probably due to the changes in the charge states of the defects. Enhanced yellow-green emissions are well resolved into four peaks at around 1.98, 2.19, 2.36, and 2.53 eV due to a shallow irradiation depth. Possible origins are proposed and discussed.

Brillouin scattering study on elastic and piezoelectric properties of laser irradiated ZnO single crystals

Brillouin light scattering technique can be successfully used to determine the whole set of elastic and piezoelectric constants of a ZnO single crystal irradiated by different laser energy densities, into a micron range （radiation layer thickness）. It is found that the scattering intensity, the linewidth and the Brillouin scattering shift of acoustic phonons are all strongly dependent on laser energy density. Based on the sound propagation equations and these results, the directional dependences of the compressional and shear moduli of the irradiated ZnO sample in the （001） plane are investigated. It is found that under an appropriate laser condition, 248 nm KrF excimer laser irradiation can significantly improve the surface quality and increase the elastic properties of ZnO single crystal. This procedure has potential applications in the fabrication of ZnO-based surface acoustic wave and optic-electronic devices.

Preparation and Gas-sensing Characteristics of Na^+-doped ZnO Single Crystals

ZnO single crystals were grown by vapor phase reaction of Zno powder with active carbon powdei at an elevated temperature The typical crystals were colorless and transparent with maximum size o4 0.1 mm in diameter and 25 mm in length, The gas-sensing characteristics of Na+-doped anc undoped single crystals were investigated in 1 %H2. Co and CH, in air between 1 50 and 600℃. It was found that the undoped ZnO single crystals showed little gas sensitivity in air. and Na+-doping can greatly enhance the senstivity by increasing the resistivities. The maximum sensitivity of the samples is 22 (Ra/ Rg) for H2. 1 2 for CO and 4 for CH4

Morphologies and Structures of Perovskite Thin Film on Zn-face and O-face of ZnO Single Crystal

ZnO single crystal was used as the substrate to study the effect of ZnO crystal plane polarity on the morphology and structure of CH_3NH_3PbI_3（MAPbI_3） perovskite film and carrier transport properties,which is meaningful for improving ZnO-based perovskite solar cell. It is found that perovskite thin film has small grain size（about 190 nm） and high coverage rate on the O-face of ZnO single crystal,and the dominant exposed crystal plane of perovskite film is（110） plane. While the MAPbI_3 thin film has large grain size（about 1.03 μm） and low coverage rate on the Zn-face,and the（022） plane is dominantly exposed for the perovskite film. The injection of photogenerated electrons from MAPbI_3 film into the O-face of ZnO single crystal is faster and more effective than that to Zn-face. It is supposed that O-face is more suitable for ZnO single crystal based perovskite cell fabrication than Zn-face.

Heterogeneous Growth of ZnO Crystal on GaN/Al_(2)O_(3) Substrate

Hydrothermal(HT)ZnO substrates were usually used as seeds for the vapor growth of ZnO crystals.In this work,ZnO bulk crystals were grown using the relatively low-cost GaN/AlOsubstrates as seeds by chemical vapor transport(CVT).With the increase of growth time,the dislocation densities in the crystal decreased from about 1×10^(6) to 6×10^(3) cm^(-2).The carrier concentration decreased from 1.24×10^(19) to 1.57×10^(17)cm^(-3),while the carrier mobility increased from 63.8 to 179 cm^(2)/(V·s).The optical transmittance in the VIS-NIR wavelength increased significantly in combination with the decreasing dislocation densities and impurity concentrations.The dislocation lines and related fast diffusion paths gradually decreased and disappeared in the late growth stage,and the crystal qualities were consequently improved.The experimental results show that the properties of as-grown ZnO crystals are comparable with bulk ZnO grown on the HT substrates to some extent.The GaN/Al_(2)O_(3) seeds may have a potential application value in the industrial production of ZnO single crystals.