ZnO films were prepared at different substrate temperatures through spraying pyrolysis deposition of zinc chloride precursor onto glass substrate. Substrate temperature affects surface morphology of films and therefor...ZnO films were prepared at different substrate temperatures through spraying pyrolysis deposition of zinc chloride precursor onto glass substrate. Substrate temperature affects surface morphology of films and therefore their optical and electrical properties. All films are polycrystalline with Wurtzite crystal structure and preferentially grow along c-axis direction. Formation of ZnO rods start at about 500 °C. The diameter and length of rods deposited at 500 °C are350–500 and 550–700 nm, respectively. By increasing substrate temperature, film becomes more coverage and diameter of the rods reduces to 250–300 nm but their length increases to 1,000–1,200 nm, respectively. Optical transmission in visible region decreases with increasing substrate temperature. An ultraviolet emission and two visible emissions at 2.82 and2.37 eV are observed for photoluminescence spectra at room temperature. The resistivity of ZnO films increases with increasing substrate temperature due to surface morphology.展开更多
Zinc oxide（ZnO） thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were depos...Zinc oxide（ZnO） thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were deposited at two different temperatures： 300 and 350℃. The substrates were heated using the solar cells method.The substrate was R217102 glass, whose size was 30×17.5×1 mm^3. The films exhibit a hexagonal wurtzite structure with a strong（002） preferred orientation. The higher value of crystallite size is attained for sprayed films at 350℃, which is probably due to an improvement of the crystallinity of the films at this point. The average transmittance of obtain films is about 90%–95%, as measured by a UV–vis analyzer. The band gap energy varies from 3.265 to 3.294 e V for the deposited Zn O thin film at 300 and 350℃, respectively. The electrical resistivity measured of our films are in the order 0.36 Ω·cm.展开更多
Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagon...Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong （002） preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer （UV-vis） of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 （Ω·cm）^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.展开更多
低温喷雾热解(Low temperature spray pyrolysis,LTSP)制备ZnO薄膜具有低成本、可大面积制膜的优点,符合卷对卷生产技术要求,在柔性触摸显示、有机电致发光(OLED)、有机光伏(OPV)等领域中具有重要的应用前景。通过对前驱液配方的改进及...低温喷雾热解(Low temperature spray pyrolysis,LTSP)制备ZnO薄膜具有低成本、可大面积制膜的优点,符合卷对卷生产技术要求,在柔性触摸显示、有机电致发光(OLED)、有机光伏(OPV)等领域中具有重要的应用前景。通过对前驱液配方的改进及设备的优化,LTSP实现了在柔性衬底上制备ZnO薄膜。因此,从不同溶液体系讨论国内外近年来LTSP制备ZnO薄膜技术的研究现状、进展及其应用价值,同时介绍本课题组近期在该领域的研究进展,供有机光电器件领域同行参考。展开更多
文摘ZnO films were prepared at different substrate temperatures through spraying pyrolysis deposition of zinc chloride precursor onto glass substrate. Substrate temperature affects surface morphology of films and therefore their optical and electrical properties. All films are polycrystalline with Wurtzite crystal structure and preferentially grow along c-axis direction. Formation of ZnO rods start at about 500 °C. The diameter and length of rods deposited at 500 °C are350–500 and 550–700 nm, respectively. By increasing substrate temperature, film becomes more coverage and diameter of the rods reduces to 250–300 nm but their length increases to 1,000–1,200 nm, respectively. Optical transmission in visible region decreases with increasing substrate temperature. An ultraviolet emission and two visible emissions at 2.82 and2.37 eV are observed for photoluminescence spectra at room temperature. The resistivity of ZnO films increases with increasing substrate temperature due to surface morphology.
基金supported in part by the National Project Research (PNR)VTRS laboratory of El–Oued University, X-ray diffraction data in this work were acquired with an instrument supported by the University of Biskra
文摘Zinc oxide（ZnO） thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were deposited at two different temperatures： 300 and 350℃. The substrates were heated using the solar cells method.The substrate was R217102 glass, whose size was 30×17.5×1 mm^3. The films exhibit a hexagonal wurtzite structure with a strong（002） preferred orientation. The higher value of crystallite size is attained for sprayed films at 350℃, which is probably due to an improvement of the crystallinity of the films at this point. The average transmittance of obtain films is about 90%–95%, as measured by a UV–vis analyzer. The band gap energy varies from 3.265 to 3.294 e V for the deposited Zn O thin film at 300 and 350℃, respectively. The electrical resistivity measured of our films are in the order 0.36 Ω·cm.
文摘Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong （002） preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer （UV-vis） of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 （Ω·cm）^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.
文摘低温喷雾热解(Low temperature spray pyrolysis,LTSP)制备ZnO薄膜具有低成本、可大面积制膜的优点,符合卷对卷生产技术要求,在柔性触摸显示、有机电致发光(OLED)、有机光伏(OPV)等领域中具有重要的应用前景。通过对前驱液配方的改进及设备的优化,LTSP实现了在柔性衬底上制备ZnO薄膜。因此,从不同溶液体系讨论国内外近年来LTSP制备ZnO薄膜技术的研究现状、进展及其应用价值,同时介绍本课题组近期在该领域的研究进展,供有机光电器件领域同行参考。
