2D MXenes are highly attractive for fabricating high-precision gas sensors operated at room temperature(RT)due to their high surface-to-volume ratio.However,the limited selectivity and low sensitivity are still long-s...2D MXenes are highly attractive for fabricating high-precision gas sensors operated at room temperature(RT)due to their high surface-to-volume ratio.However,the limited selectivity and low sensitivity are still long-standing challenges for their further applications.Herein,the self-assembly of 0D-2D heterostructure for highly sensitive NO_(2) detection was achieved by integrating ZnO nanoparticles on Ti_(3)C_(2)Tx MXene-derived TiO_(2) nanosheets(designated as ZnO@MTiO_(2)).ZnO nanoparticles can not only act as spacers to prevent the restacking of MTiO_(2) nanosheets and ensure effective transfer for gas molecules,but also enhance the sensitivity of the sensor the through trapping effect on electrons.Meanwhile,MTiO_(2) nanosheets facilitate gas diffusion for rapid sensor response.Benefiting from the synergistic effect of individual components,the ZnO@MTiO_(2)0D-2D heterostructure-based sensors revealed remarkable sensitivity and excellent selectivity to low concentration NO_(2) at RT.This work may facilitate the sensing application of MXene derivative and provide a new avenue for the development of high-performance gas sensors in safety assurance and environmental monitoring.展开更多
Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limit...Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers.Here,we demonstrate high-performance Al NS/ZnO quantum dots(Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs.The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures,and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures.The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation.Consequently,the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~1.065 mA compared to that of the pristine ZnO device,and an outstanding photoresponsivity of 11.98 A W-1 is correspondingly achieved under 6.9 MW cm-2 UV light illumination at 10 V bias.In addition,a relatively fast response is similarly witnessed with the Al/ZnO devices,paving a path to fabricate the high-performance UV photodetectors for applications.展开更多
ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, t...ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.展开更多
The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a ...The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.展开更多
The paper reports the fabrication of Zn-doped TiO_2 nanotubes(Zn-TONT)/ZnO nanoflakes heterostructure for the first time,which shows improved performance as a photoanode in dye-sensitized solar cell(DSSC).The layered ...The paper reports the fabrication of Zn-doped TiO_2 nanotubes(Zn-TONT)/ZnO nanoflakes heterostructure for the first time,which shows improved performance as a photoanode in dye-sensitized solar cell(DSSC).The layered structure of this novel nanoporous structure has been analyzed unambiguously by Rutherford backscattering spectroscopy,scanning electron microscopy,and X-ray diffractometer.The cell using the heterostructure as photoanode manifests an enhancement of about an order in the magnitude of the short circuit current and a seven-fold increase in efficiency,over pure TiO_2 photoanodes.Characterizations further reveal that the Zn-TONT is preferentially oriented in [001] direction and there is a Ti metal-depleted interface layer which leads to better band alignment in DSSC.展开更多
The shuttle effect of polysulfides is one of the key factors hindering the commercialization of lithiumsulfur batteries(LSBs).Owing to their high conductivity and advantageous structure,heterostructures can be used in...The shuttle effect of polysulfides is one of the key factors hindering the commercialization of lithiumsulfur batteries(LSBs).Owing to their high conductivity and advantageous structure,heterostructures can be used in sulfur fixation and catalysis of LSBs.In this study,a flower-shaped ZnO/ZnS heterostructure on a nitrogendoped porous carbon(NPC) sulfur host was designed.The ZnO/ZnS heterostructure regulates the electronic structure of the material and exhibits higher metal-like properties.Moreover,the ZnO/ZnS heterostructure combines the strong adsorption property of ZnO and the high catalytic ability of ZnS to realize the anchoring-diffusionconversion of lithium poly sulfides(LiPSs).Results reveal that the developed ZnO/ZnS@NPC/S cathode has excellent electrochemical performance in LSBs,achieving a high discharge specific capacity of 1365.3 mAh·g^(-1) at 0.1C and excellent rate capability(719 mAh·g^(-1) at 2C;the capacity decay rate is only 0.042% per cycle after 1000 cycles).Even under a high sulfur loading-E/S(electrolyte/sulfur)ratio of 5.1 mg·cm^(-2)-6 μl·mg^(-1),a high specific capacity of 723.7 mAh·g^(-1) is maintained after 60 cycles.This study provides a new strategy for a multifunctional sulfur host that can effectively alleviate the shuttle effect of LiPSs and improve the utilization of sulfur active substances.展开更多
Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to ...Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.展开更多
基金supported by the National Natural Science Foundation of China(No.52103308)the Natural Science Foundation of Jiangsu Province of China(No.BK20210826)+4 种基金Outstanding Youth Foundation of Jiangsu Province of China(No.BK20211548)National Key Research and Development Program of China(No.2017YFE0115900)Innovative Science and Technology Platform Project of Cooperation between Yangzhou City and Yangzhou University(No.YZ2020266)Lvyang Jinfeng Plan for Excellent Doctor of Yangzhou City,Special Funds for Self-Made Experimental Equipment of Yangzhou Universitythe Doctor of Suzhou University Scientific Research Foundation Project(No.2022BSK003).
文摘2D MXenes are highly attractive for fabricating high-precision gas sensors operated at room temperature(RT)due to their high surface-to-volume ratio.However,the limited selectivity and low sensitivity are still long-standing challenges for their further applications.Herein,the self-assembly of 0D-2D heterostructure for highly sensitive NO_(2) detection was achieved by integrating ZnO nanoparticles on Ti_(3)C_(2)Tx MXene-derived TiO_(2) nanosheets(designated as ZnO@MTiO_(2)).ZnO nanoparticles can not only act as spacers to prevent the restacking of MTiO_(2) nanosheets and ensure effective transfer for gas molecules,but also enhance the sensitivity of the sensor the through trapping effect on electrons.Meanwhile,MTiO_(2) nanosheets facilitate gas diffusion for rapid sensor response.Benefiting from the synergistic effect of individual components,the ZnO@MTiO_(2)0D-2D heterostructure-based sensors revealed remarkable sensitivity and excellent selectivity to low concentration NO_(2) at RT.This work may facilitate the sensing application of MXene derivative and provide a new avenue for the development of high-performance gas sensors in safety assurance and environmental monitoring.
基金the National Natural Science Foundation of China(Grant Nos.61705070 and 61974052)China Postdoctoral Science Foundation(Grant Nos.2019M662594)National Research Foundation of Korea(NRF)Grant funded by the Korean Government(MSIP)(Nos.NRF2019R1A2C4069438 and NRF2018R1A6A1A03025242)。
文摘Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers.Here,we demonstrate high-performance Al NS/ZnO quantum dots(Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs.The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures,and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures.The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation.Consequently,the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~1.065 mA compared to that of the pristine ZnO device,and an outstanding photoresponsivity of 11.98 A W-1 is correspondingly achieved under 6.9 MW cm-2 UV light illumination at 10 V bias.In addition,a relatively fast response is similarly witnessed with the Al/ZnO devices,paving a path to fabricate the high-performance UV photodetectors for applications.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50472009, 10474091 and 50532070)
文摘ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.
基金Project supported by the Postdoctor Foundation of Hebei Province, Chinathe Natural Science Foundation of Hebei Province,China (Grant No. F2012201093)the Natural Science Foundation of Hebei University, China (Grant No. 2008127)
文摘The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.
基金UGC-DAE CSR,Indore,for funding through a collaborative project and SAIF IIT Bombay for the help with SEMsupported by the Michigan Space Grant Consortium+1 种基金by Hope CollegeDAE-BRNS for funding the preliminary works
文摘The paper reports the fabrication of Zn-doped TiO_2 nanotubes(Zn-TONT)/ZnO nanoflakes heterostructure for the first time,which shows improved performance as a photoanode in dye-sensitized solar cell(DSSC).The layered structure of this novel nanoporous structure has been analyzed unambiguously by Rutherford backscattering spectroscopy,scanning electron microscopy,and X-ray diffractometer.The cell using the heterostructure as photoanode manifests an enhancement of about an order in the magnitude of the short circuit current and a seven-fold increase in efficiency,over pure TiO_2 photoanodes.Characterizations further reveal that the Zn-TONT is preferentially oriented in [001] direction and there is a Ti metal-depleted interface layer which leads to better band alignment in DSSC.
基金financially supported by Yunnan Major Scientific and Technological Projects (No.202202AG050003)Yunnan Fundamental Research Projects (Nos.202101BE070001-018 and 202201AT070070)。
文摘The shuttle effect of polysulfides is one of the key factors hindering the commercialization of lithiumsulfur batteries(LSBs).Owing to their high conductivity and advantageous structure,heterostructures can be used in sulfur fixation and catalysis of LSBs.In this study,a flower-shaped ZnO/ZnS heterostructure on a nitrogendoped porous carbon(NPC) sulfur host was designed.The ZnO/ZnS heterostructure regulates the electronic structure of the material and exhibits higher metal-like properties.Moreover,the ZnO/ZnS heterostructure combines the strong adsorption property of ZnO and the high catalytic ability of ZnS to realize the anchoring-diffusionconversion of lithium poly sulfides(LiPSs).Results reveal that the developed ZnO/ZnS@NPC/S cathode has excellent electrochemical performance in LSBs,achieving a high discharge specific capacity of 1365.3 mAh·g^(-1) at 0.1C and excellent rate capability(719 mAh·g^(-1) at 2C;the capacity decay rate is only 0.042% per cycle after 1000 cycles).Even under a high sulfur loading-E/S(electrolyte/sulfur)ratio of 5.1 mg·cm^(-2)-6 μl·mg^(-1),a high specific capacity of 723.7 mAh·g^(-1) is maintained after 60 cycles.This study provides a new strategy for a multifunctional sulfur host that can effectively alleviate the shuttle effect of LiPSs and improve the utilization of sulfur active substances.
基金financially supported by the National Natural Science Foundation of China (Nos.52172094 and 22209105)Shanghai Municipal Natural Science Foundation (No.21ZR1426700)the “Shuguang” Program of Shanghai Education Commission (No.19SG46)。
文摘Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.
