Influence of size of seed grains and sintering condition on varistor properties of ZnO-Bi_2O_3-TiO_2-Sb_2O_3 ceramics

Varistor ceramics of ZnO Bi 2O 3 TiO 2 Sb 2O 3 system have been fabricated by introducing pre fabricated ZnO seed grains with different size distributions respectively. The results show that the varistor properties were significantly influenced by the size of introduced seed grains, and introducing larger seed grains is more advantageous to the modification of microstructure and the improvement of varistor properties. The varistor properties were considerably improved with a moderately increased sintering temperature or time, whereas degraded apparently when the sintering temperature or time was excessively increased. Compared with the sintering time, the sintering temperature plays a more critical role in determining the varistor properties. By introducing pre fabricated ZnO seed grains into the original powders, low voltage ZnO varistor ceramics possessing the desired electrical properties have been produced with a sintering temperature of about 1 210 ℃ and a sintering temperature of 2～2.5 h. [

BaTiO3和SrTiO3薄膜生长初期化学分子反应机理

本文采用B3LYP密度泛函方法,研究了BaO、SrO与TiO2形成BaTiO3、SrTiO3及TiO2二聚形成Ti2O4的微观反应机理,获得了相应的中间体、过渡态及反应活化能。采用自然键轨道NBO方法分析了反应过程中各中间体和过渡态的成键情况、轨道间的相互作用以及原子的电荷。计算结果表明,形成BaTiO3、SrTiO3和Ti2O4反应活化能分别为16.3、17.3和9.6 kJ/mol,TiO2形成二聚体活化能相对较小,从理论上解释了实验过程中观测到TiO2二聚体;但SrO、BaO和TiO2形成BaTiO3、SrTiO3的反应过程中,形成最初的稳定中间体时分别放热484.7和534.7 kJ/mol,且活化能较低,轨道间相互作用较强,静电引力作用显著,有利于SrTiO3和Ba-TiO3薄膜生长初期以TiO2为中心,结合BaO和SrO成核生长,从而有利于单元胞的进一步形成。

低压压敏电阻器材料与技术

综述了低压压敏材料及制备技术方面的研究进展情况。氧化锌半导体陶瓷压敏材料仍然占据主导地位，同时，氧化钛等非氧化锌材料也相继开发出来，作为对氧化锌的补充，也受到了不同程度的重视。