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Microstructures and characteristics of deep trap levels in ZnO varistors doped with Y_2O_3 被引量:5
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作者 LIU Jun 1 ,HU Jun 1 ,HE JinLiang 1 ,LIN YuanHua 2 &LONG WangCheng 1 1State Key Laboratory of Power Systems,Department of Electrical Engineering,Tsinghua University,Beijing 100084,China 2State Key Laboratory of New Ceramics and Fine Processing,Department of Material Science and Engineering,Tsinghua University, Beijing 100084,China 《Science China(Technological Sciences)》 SCIE EI CAS 2009年第12期3668-3673,共6页
In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented.Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the... In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented.Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3,and the average grain size of the specimens decreases from about 9.2μm to 4.5μm,with an increase in the addition of Y2O3 from 0 mol%to 3 mol%.The corresponding varistor’s voltage gradient markedly increases from 462 V/mm to 2340 V/mm,while the nonlinear coefficient decreases from 22.3 to 11.5,respectively.Furthermore,the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric spectroscopies.The trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 increases.These traps may be ascribed to the intrinsic defects of ZnO lattice. 展开更多
关键词 zno varistors y2o3 electrical properties deep trap levels
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