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Microstructure and electrical properties of Lu_2O_3-doped ZnO-Bi_2O_3-based varistor ceramics 被引量:8
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作者 徐东 史小锋 +4 位作者 程晓农 杨娟 樊曰娥 袁宏明 施利毅 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2010年第12期2303-2308,共6页
Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics sa... Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V-I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases. 展开更多
关键词 zno-bi2o3 ceramics varistor rare earth electrical properties
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Influence of size of seed grains and sintering condition on varistor properties of ZnO-Bi_2O_3-TiO_2-Sb_2O_3 ceramics 被引量:1
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作者 徐庆 陈文 袁润章 《中国有色金属学会会刊:英文版》 CSCD 2001年第3期328-332,共5页
Varistor ceramics of ZnO Bi 2O 3 TiO 2 Sb 2O 3 system have been fabricated by introducing pre fabricated ZnO seed grains with different size distributions respectively. The results show that the varistor properties we... Varistor ceramics of ZnO Bi 2O 3 TiO 2 Sb 2O 3 system have been fabricated by introducing pre fabricated ZnO seed grains with different size distributions respectively. The results show that the varistor properties were significantly influenced by the size of introduced seed grains, and introducing larger seed grains is more advantageous to the modification of microstructure and the improvement of varistor properties. The varistor properties were considerably improved with a moderately increased sintering temperature or time, whereas degraded apparently when the sintering temperature or time was excessively increased. Compared with the sintering time, the sintering temperature plays a more critical role in determining the varistor properties. By introducing pre fabricated ZnO seed grains into the original powders, low voltage ZnO varistor ceramics possessing the desired electrical properties have been produced with a sintering temperature of about 1 210 ℃ and a sintering temperature of 2~2.5 h. [ 展开更多
关键词 Zno Bi 2o 3 Tio 2 Sb 2o 3 ceramics seed grains sintering temperature sintering time low varistor voltage
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SiO_(2)掺杂对ZnO-Bi_(2)O_(3)基压敏陶瓷微观结构及电性能的影响
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作者 宋继光 李凯 +5 位作者 陈蕊 徐仲勋 姜珊盼 毛航银 赵霞 许东杰 《中国陶瓷》 CAS CSCD 北大核心 2022年第2期37-42,共6页
采用传统固相法成功制备了不同SiO_(2)掺杂量的ZnO-Bi_(2)O_(3)基压敏陶瓷。研究了SiO_(2)添加剂对ZnO-Bi_(2)O_(3)基压敏陶瓷物相组成、微观形貌和电性能的影响规律及作用机理。XRD结果表明,ZnO-Bi_(2)O_(3)基压敏陶瓷由ZnO主晶相和尖... 采用传统固相法成功制备了不同SiO_(2)掺杂量的ZnO-Bi_(2)O_(3)基压敏陶瓷。研究了SiO_(2)添加剂对ZnO-Bi_(2)O_(3)基压敏陶瓷物相组成、微观形貌和电性能的影响规律及作用机理。XRD结果表明,ZnO-Bi_(2)O_(3)基压敏陶瓷由ZnO主晶相和尖晶石相、富Bi相和含Si相等第二相组成。当SiO_(2)含量增加时,ZnO晶粒尺寸逐渐减小,压敏电压梯度E_(1m A)逐渐增大,这是由于二次相的钉扎效应所致。此外,随着SiO_(2)含量的增加,非线性系数α先增大后减小,而泄漏电流I_(L)先减小后增大,这是由于微观结构变化影响了晶界势垒高度。当SiO_(2)掺杂量为1.5 mol%时,ZnO压敏陶瓷的电性能最佳,E_(1mA)=504 V/mm,α=55,I_(L)=1.78μA。 展开更多
关键词 ZNo压敏陶瓷 Sio_(2)掺杂 电性能 微观结构
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Microhardness,microstructure and electrical properties of ZVM ceramics 被引量:2
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作者 Abdel-Mageed H.KHAFAGY Sanaa M.EL-RABAIE +1 位作者 Mohamed T.DAWOUD M.T.ATTIAb 《Journal of Advanced Ceramics》 SCIE CAS 2014年第4期287-296,共10页
The effect of Mn_(3)O_(4)addition on microhardness,microstructure and electrical properties of vanadium oxide doped zinc oxide varistor ceramics is systematically investigated.The Vicker’s microhardness HV has decrea... The effect of Mn_(3)O_(4)addition on microhardness,microstructure and electrical properties of vanadium oxide doped zinc oxide varistor ceramics is systematically investigated.The Vicker’s microhardness HV has decreased with increasing the amount of Mn3O4.Also,the average grain size has decreased from 27.51μm to 19.55μm with increasing the amount of Mn_(3)O_(4) up to 0.50 mol%,whereas an increase in Mn_(3)O_(4) up to 0.75 mol%has caused the average grain size to increase and then it decreases with increasing Mn_(3)O_(4)from 0.75 mol%to 1.00 mol%.The sintered density has decreased from 5.38 g/cm3 to 5.31 g/cm3 with increasing the amount of Mn_(3)O_(4).The varistor ceramic modified with 0.50 mol%Mn_(3)O_(4) has exhibited excellent nonlinear properties,with 16.29 for the nonlinear coefficient and 441.9μA/cm2 for the leakage current density.Furthermore,the sample doped with 0.50 mol%Mn_(3)O_(4) has been found to possess donor density as 0.77×10^(18) cm^(-3) and 0.916 eV barrier height. 展开更多
关键词 ceramics electrical properties MICRoSTRUCTURE varistor Mn3o4 doped Zno-V2o5 varistor
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