通过水热法和热还原法合成了Cu2O/ZnO异质结构纳米线阵列,研究了Cu2O/ZnO异质结构纳米线阵列的光电化学性能。与纯的ZnO纳米线阵列光阳极相比,这种Cu2O/ZnO异质结构光阳极在日光辐照时,展现出了更优异的光电化学性能。在1 V vs.Ag/Ag C...通过水热法和热还原法合成了Cu2O/ZnO异质结构纳米线阵列,研究了Cu2O/ZnO异质结构纳米线阵列的光电化学性能。与纯的ZnO纳米线阵列光阳极相比,这种Cu2O/ZnO异质结构光阳极在日光辐照时,展现出了更优异的光电化学性能。在1 V vs.Ag/Ag Cl偏压时,异质结构光阳极的光电流密度达到1.5 m A/cm2,是纯ZnO纳米线阵列的2倍多。这种光电化学性能的提高,一方面是由于Cu2O的加入,提高了光阳极对于可见光的吸收效率,增强了光生载流子的密度。另一方面,Cu2O和ZnO之间形成的空间电场加速了光生电子-空穴对的分离,从而提高了复合结构光阳极的光电化学性能。结果表明,用地球上储量丰富的元素合成的金属氧化物异质结,也可以实现利用太阳光分解水制备氢气。展开更多
With the increasing interest in Cu2O-based devices for photovoltaic applications,the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention.In this work,a high-quality Cu2O/ZnO heter...With the increasing interest in Cu2O-based devices for photovoltaic applications,the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention.In this work,a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2 O3 substrate by laser-molecular beam epitaxy,and the energy band alignment is determined by x-ray photoelectron spectroscopy.The valence band of ZnO is found to be 1.97 eV below that of Cu2O.A type-II band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV,which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.展开更多
文摘通过水热法和热还原法合成了Cu2O/ZnO异质结构纳米线阵列,研究了Cu2O/ZnO异质结构纳米线阵列的光电化学性能。与纯的ZnO纳米线阵列光阳极相比,这种Cu2O/ZnO异质结构光阳极在日光辐照时,展现出了更优异的光电化学性能。在1 V vs.Ag/Ag Cl偏压时,异质结构光阳极的光电流密度达到1.5 m A/cm2,是纯ZnO纳米线阵列的2倍多。这种光电化学性能的提高,一方面是由于Cu2O的加入,提高了光阳极对于可见光的吸收效率,增强了光生载流子的密度。另一方面,Cu2O和ZnO之间形成的空间电场加速了光生电子-空穴对的分离,从而提高了复合结构光阳极的光电化学性能。结果表明,用地球上储量丰富的元素合成的金属氧化物异质结,也可以实现利用太阳光分解水制备氢气。
基金Project supported by the National Natural Science Foundation of China(Grant No.11404302)the Laser Fusion Research Center Funds for Young Talents,China(Grant No.RCFPD1-2017-9)
文摘With the increasing interest in Cu2O-based devices for photovoltaic applications,the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention.In this work,a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2 O3 substrate by laser-molecular beam epitaxy,and the energy band alignment is determined by x-ray photoelectron spectroscopy.The valence band of ZnO is found to be 1.97 eV below that of Cu2O.A type-II band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV,which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.
