ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure,surface morphology, defects, and optical properties of the thin films were characterized by x-ray ...ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure,surface morphology, defects, and optical properties of the thin films were characterized by x-ray diffraction(XRD), scanning electron microscopy(SEM), positron annihilation Doppler broadening, and UV-Vis spectrophotometer, respectively.It was found that the(200)-plane preferred orientation of the ZnS thin films changed to(111)-plane with increasing sulfidation temperature. Moreover, a number of large holes were generated at 420?C and eliminated at 440?C. The concentration of defects was lowest when the sulfuration temperature was 440?C. The optical transmission of all samples was maintained at 60%–80% in the wavelength range of 400 nm–800 nm, and the band energy of the ZnS thin films was approximately3.5 e V for all treatment temperatures except 430?C.展开更多
N-ion-implantation to a fluence of 1 × 1015 ions/cm^2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-5...N-ion-implantation to a fluence of 1 × 1015 ions/cm^2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction （XRD）, photoluminescence （PL）, optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.展开更多
We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The en...We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.展开更多
采用磁控溅射技术在硅衬底上制备ZnS薄膜,探究了溅射功率对ZnS薄膜沉积速率、表面粗糙度和表面形貌的影响。采用台阶仪、原子力显微镜(Atomic Force Microscope,AFM)、扫描电子显微镜(Scanning Electron Microscope,SEM)、椭偏仪等表征...采用磁控溅射技术在硅衬底上制备ZnS薄膜,探究了溅射功率对ZnS薄膜沉积速率、表面粗糙度和表面形貌的影响。采用台阶仪、原子力显微镜(Atomic Force Microscope,AFM)、扫描电子显微镜(Scanning Electron Microscope,SEM)、椭偏仪等表征薄膜的表面形貌、微观结构和光学性能。结果表明,ZnS薄膜的沉积速率与溅射功率有关,随溅射功率的增加而线性增加;表面粗糙度与溅射功率相关,随溅射功率的增大呈现先增大后减小的趋势。在微观结构方面,薄膜晶粒尺寸也呈现先变大后减小的趋势。随着溅射功率的增大,ZnS膜层的折射率先减小后增大。因此,溅射功率对膜层生长具有重要的作用。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11705212 and 11675188)
文摘ZnS thin films were prepared by sulfuring zinc thin films at different sulfuration temperatures. The crystal structure,surface morphology, defects, and optical properties of the thin films were characterized by x-ray diffraction(XRD), scanning electron microscopy(SEM), positron annihilation Doppler broadening, and UV-Vis spectrophotometer, respectively.It was found that the(200)-plane preferred orientation of the ZnS thin films changed to(111)-plane with increasing sulfidation temperature. Moreover, a number of large holes were generated at 420?C and eliminated at 440?C. The concentration of defects was lowest when the sulfuration temperature was 440?C. The optical transmission of all samples was maintained at 60%–80% in the wavelength range of 400 nm–800 nm, and the band energy of the ZnS thin films was approximately3.5 e V for all treatment temperatures except 430?C.
基金Project supported by the National Natural Science Foundation of China(Grant No.11304276)the Natural Science Foundation of Guangdong Province of China(Grant No.S2013010014965)+2 种基金the Cultivation of Innovative Talents of the Colleges and Universities of Guangdong Province of China(Grant No.LYM10098)the China Postdoctoral Science Foundation(Grant No.20090461331)the Natural Science Foundation of Zhanjiang Normal College,China(Grant No.ZL1005)
文摘N-ion-implantation to a fluence of 1 × 1015 ions/cm^2 was performed on ZnS thin films deposited on glass substrates by using the vacuum evaporation method. The films were annealed in flowing nitrogen at 400 ℃-500 ℃ after N-ion-implantation to repair the ion-beam-induced structural destruction and electrically activate the dopants. Effects of ion-implantation and post-thermal annealing on ZnS films were investigated by X-ray diffraction （XRD）, photoluminescence （PL）, optical transmittance, and electrical measurements. Results showed that the diffraction peaks and PL intensities were decreased by N-ion-implantation, but fully recovered by further annealing at 500 ℃. In this experiment, all films exhibited high resistivity due to the partial dopant activation under 500 ℃.
基金This work was supported by the National Natural Science Foundation of China （No.60776039 and No.60406005）, the Natural Science Foundation of Beijing （No.3062016）, and the School Foundation of Beijing Jiaotong University.
文摘We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.
文摘采用磁控溅射技术在硅衬底上制备ZnS薄膜,探究了溅射功率对ZnS薄膜沉积速率、表面粗糙度和表面形貌的影响。采用台阶仪、原子力显微镜(Atomic Force Microscope,AFM)、扫描电子显微镜(Scanning Electron Microscope,SEM)、椭偏仪等表征薄膜的表面形貌、微观结构和光学性能。结果表明,ZnS薄膜的沉积速率与溅射功率有关,随溅射功率的增加而线性增加;表面粗糙度与溅射功率相关,随溅射功率的增大呈现先增大后减小的趋势。在微观结构方面,薄膜晶粒尺寸也呈现先变大后减小的趋势。随着溅射功率的增大,ZnS膜层的折射率先减小后增大。因此,溅射功率对膜层生长具有重要的作用。
