ZrCoCe getter films with thickness of ~2.3 lm were deposited on Si(100) wafers by direct current(DC)magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film w...ZrCoCe getter films with thickness of ~2.3 lm were deposited on Si(100) wafers by direct current(DC)magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film without exposure to atmosphere. Microstructure, surface morphology and surface chemical state of the films were analyzed. Moreover, hydrogen sorption properties were determined. The results show that the ZrCoCe film displays a cauliflower-like morphology and a porous columnar-like structure which is composed of nanocrystal grains. The Pd protection layer tightly adheres to the surface of the ZrCoCe film and efficiently prevents the oxidation of Zr under exposure to atmosphere. We find that the hydrogen sorption properties of the Pd-ZrCoCe film are significantly improved,in comparison with those of the as-deposited ZrCoCe film.展开更多
基金financially supported by the National Natural Science Foundation of China(No.61874137)。
文摘ZrCoCe getter films with thickness of ~2.3 lm were deposited on Si(100) wafers by direct current(DC)magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film without exposure to atmosphere. Microstructure, surface morphology and surface chemical state of the films were analyzed. Moreover, hydrogen sorption properties were determined. The results show that the ZrCoCe film displays a cauliflower-like morphology and a porous columnar-like structure which is composed of nanocrystal grains. The Pd protection layer tightly adheres to the surface of the ZrCoCe film and efficiently prevents the oxidation of Zr under exposure to atmosphere. We find that the hydrogen sorption properties of the Pd-ZrCoCe film are significantly improved,in comparison with those of the as-deposited ZrCoCe film.
