Half-Heusler(HH)合金由于其本身具有较为优异的力学性能和高温热稳定性,已成为目前最具有应用前景的中高温热电材料之一。然而,其本身较高的本征晶格热导率阻碍了热电性能的进一步提升。本文以P型Zr Co Sb0.85Sn0.15合金为研究对象,基...Half-Heusler(HH)合金由于其本身具有较为优异的力学性能和高温热稳定性,已成为目前最具有应用前景的中高温热电材料之一。然而,其本身较高的本征晶格热导率阻碍了热电性能的进一步提升。本文以P型Zr Co Sb0.85Sn0.15合金为研究对象,基于同构合金化具有优异P型热电性能的(Nb0.8Ta0.2)0.8Ti0.2Fe Sb,通过磁悬浮熔炼和放电等离子烧结设计并制备出一种(Zr Co Sb0.85Sn0.15)1-x[(Nb0.8Ta0.2)0.8Ti0.2Fe Sb]x(x=0,0.2,0.3,0.4,0.5)高熵HH合金。微观组织分析表明,同构合金化这一策略引入了大量多尺度多衬度的第二相,这将有效增强对声子的散射。其中,当同构合金化含量为0.3时,晶格热导率在923 K时从Zr Co Sb0.85Sn0.15的4.72 W·m-1·K-1降至3.07 W·m-1·K-1,降低了35%。然而,由于多位点合金化元素间存在较为复杂的掺杂效果,使其电导率和塞贝克系数同时降低,最终导致热电优值存在一定的降低。本研究工作表明,高熵合金设计思想是一种降低HH热电合金晶格热导率的有力措施。展开更多
Half-Heusler(HH)alloys constitute an important class of materials that exhibit promising potential in high-temperature thermoelectric(TE)power generation.In this work,we synthesized Zr_(1−x)Yb_(x)NiSn(x=0,0.01,0.02,0....Half-Heusler(HH)alloys constitute an important class of materials that exhibit promising potential in high-temperature thermoelectric(TE)power generation.In this work,we synthesized Zr_(1−x)Yb_(x)NiSn(x=0,0.01,0.02,0.04,0.06 and 0.10)HH alloys using a time-efficient levitation melting and spark plasma sintering procedure.X-ray diffraction showed that the samples were predominantly single phased,and that the lattice constant increased systematically with increasing Yb doping ratio.The doping effects of Yb on the thermoelectric properties were studied.It was found that Yb doping consistently decreased the electrical and thermal conductivities.On the other hand,the effects of Yb doping on the Seebeck coefficient were found to be non-monotonic.The magnitude of the Seebeck coefficient(n-type)was increased upon Yb doping up to x=0.02,above which Yb doping introduced notable p-type conduction.As a result,the room-temperature Seebeck coefficient of the x=0.10 sample became positive although the magnitude was not high.The thermoelectric figure of merit,ZT,reached a maximum of∼0.38 at 900 K for the x=0.01 sample.Selective doping on the Ni and Sn sites are necessary to further optimize the TE performance of Zr_(1−x)Yb_(x)NiSn alloys.展开更多
In contrary to the commonly used arc melting method, samples in the present paper were prepared by the solid state reaction from elemental powders at 1173 K under a flowing Ar atmosphere for 96-168 h. The constituent ...In contrary to the commonly used arc melting method, samples in the present paper were prepared by the solid state reaction from elemental powders at 1173 K under a flowing Ar atmosphere for 96-168 h. The constituent phases and the elemental compositions were determined and shown that the samples were of single phase and stoichiometry. Then the spark plasma sintering technique was used to consolidate them. It is found that, dense ZrNiSn-based compounds with fine grain size and homogeneous microstructure were achieved under the condition of 1123 K/40 MPa/25 min.展开更多
设计一种特别的TiCoSb复合靶材,通过调节各元素在复合靶材上所占面积的大小,可以方便地调节薄膜的成分.采用这种靶材,利用直流磁控溅射和快速退火成功制备单一物相的多晶TiCoSb薄膜;采用X射线衍射(X-raydiffraction,XRD)和原子力显微镜(...设计一种特别的TiCoSb复合靶材,通过调节各元素在复合靶材上所占面积的大小,可以方便地调节薄膜的成分.采用这种靶材,利用直流磁控溅射和快速退火成功制备单一物相的多晶TiCoSb薄膜;采用X射线衍射(X-raydiffraction,XRD)和原子力显微镜(atomic force microscopy,AFM)分析TiCoSb薄膜的结构和表面形貌;利用Hall测试仪初步研究薄膜的电学性质.结果表明,所制备的TiCoSb薄膜对石英玻璃衬底具有良好的粘附力,薄膜均匀致密.经600℃,5 min退火的TiCoSb薄膜的结晶质量较好,薄膜的室温电导率为13.7 S/cm.展开更多
TiCoSb-based half-Heusler compounds with the substitution of Zr for Ti have been prepared quickly by combining high-energy ball milling method with spark plasma sintering technique, and their thermal transport propert...TiCoSb-based half-Heusler compounds with the substitution of Zr for Ti have been prepared quickly by combining high-energy ball milling method with spark plasma sintering technique, and their thermal transport properties have been investigated. With the increase of the concentration of Zr, the thermal conductivity of Til-xZrxCoSb compounds decreases significantly. Compared with the thermal conductivity of TiCoSb compound, that of Ti0.5Zr0.5CoSb decreases by 200% at 1000 K.展开更多
文摘Half-Heusler(HH)合金由于其本身具有较为优异的力学性能和高温热稳定性,已成为目前最具有应用前景的中高温热电材料之一。然而,其本身较高的本征晶格热导率阻碍了热电性能的进一步提升。本文以P型Zr Co Sb0.85Sn0.15合金为研究对象,基于同构合金化具有优异P型热电性能的(Nb0.8Ta0.2)0.8Ti0.2Fe Sb,通过磁悬浮熔炼和放电等离子烧结设计并制备出一种(Zr Co Sb0.85Sn0.15)1-x[(Nb0.8Ta0.2)0.8Ti0.2Fe Sb]x(x=0,0.2,0.3,0.4,0.5)高熵HH合金。微观组织分析表明,同构合金化这一策略引入了大量多尺度多衬度的第二相,这将有效增强对声子的散射。其中,当同构合金化含量为0.3时,晶格热导率在923 K时从Zr Co Sb0.85Sn0.15的4.72 W·m-1·K-1降至3.07 W·m-1·K-1,降低了35%。然而,由于多位点合金化元素间存在较为复杂的掺杂效果,使其电导率和塞贝克系数同时降低,最终导致热电优值存在一定的降低。本研究工作表明,高熵合金设计思想是一种降低HH热电合金晶格热导率的有力措施。
基金supported by the Nature Science Foundation of China(Grant Nos.51171171 and 50971115)the National Basic Research Program of China(Grant No.2007CB607502)J.H.would like to thank the support by the National Science Foundation of the United States(Grant No.1008073).
文摘Half-Heusler(HH)alloys constitute an important class of materials that exhibit promising potential in high-temperature thermoelectric(TE)power generation.In this work,we synthesized Zr_(1−x)Yb_(x)NiSn(x=0,0.01,0.02,0.04,0.06 and 0.10)HH alloys using a time-efficient levitation melting and spark plasma sintering procedure.X-ray diffraction showed that the samples were predominantly single phased,and that the lattice constant increased systematically with increasing Yb doping ratio.The doping effects of Yb on the thermoelectric properties were studied.It was found that Yb doping consistently decreased the electrical and thermal conductivities.On the other hand,the effects of Yb doping on the Seebeck coefficient were found to be non-monotonic.The magnitude of the Seebeck coefficient(n-type)was increased upon Yb doping up to x=0.02,above which Yb doping introduced notable p-type conduction.As a result,the room-temperature Seebeck coefficient of the x=0.10 sample became positive although the magnitude was not high.The thermoelectric figure of merit,ZT,reached a maximum of∼0.38 at 900 K for the x=0.01 sample.Selective doping on the Ni and Sn sites are necessary to further optimize the TE performance of Zr_(1−x)Yb_(x)NiSn alloys.
文摘In contrary to the commonly used arc melting method, samples in the present paper were prepared by the solid state reaction from elemental powders at 1173 K under a flowing Ar atmosphere for 96-168 h. The constituent phases and the elemental compositions were determined and shown that the samples were of single phase and stoichiometry. Then the spark plasma sintering technique was used to consolidate them. It is found that, dense ZrNiSn-based compounds with fine grain size and homogeneous microstructure were achieved under the condition of 1123 K/40 MPa/25 min.
文摘设计一种特别的TiCoSb复合靶材,通过调节各元素在复合靶材上所占面积的大小,可以方便地调节薄膜的成分.采用这种靶材,利用直流磁控溅射和快速退火成功制备单一物相的多晶TiCoSb薄膜;采用X射线衍射(X-raydiffraction,XRD)和原子力显微镜(atomic force microscopy,AFM)分析TiCoSb薄膜的结构和表面形貌;利用Hall测试仪初步研究薄膜的电学性质.结果表明,所制备的TiCoSb薄膜对石英玻璃衬底具有良好的粘附力,薄膜均匀致密.经600℃,5 min退火的TiCoSb薄膜的结晶质量较好,薄膜的室温电导率为13.7 S/cm.
基金Project supported by the State Key Development Program for Basic Research of China （Grant No 2007CB607501）, the Major International Cooperation Program of the National Natural Science Foundation of China （Grant No 50310353） and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China （Grant No 705035）.
文摘TiCoSb-based half-Heusler compounds with the substitution of Zr for Ti have been prepared quickly by combining high-energy ball milling method with spark plasma sintering technique, and their thermal transport properties have been investigated. With the increase of the concentration of Zr, the thermal conductivity of Til-xZrxCoSb compounds decreases significantly. Compared with the thermal conductivity of TiCoSb compound, that of Ti0.5Zr0.5CoSb decreases by 200% at 1000 K.
