Room-temperature synthesis of ZrSnO4 nanoparticles for electron transport layer in efficient planar hetrojunction perovskite solar cells

The interface engineering plays a key role in controlled optoelectronic properties of perovskite photovoltaic devices,and thus the electron transport layer(ETL)material with tailored optoelectronic properties remains a challenge for achieving high photovoltaic performance of planar perovskite solar cells(PSCs).Here,the fine and crystalline zirconium stanate(ZrSnO4)nanoparticles(NPs)was synthesized at low temperature,and its optoelectronic properties are systematically investigated.Benefiting from the favorable electronic structure of ZrSnO4 NPs for applications in ETL,efficient electron transport and extraction with suppre s sed charge recombination are achieved at the interface of perovskite layer.As a result,the optimized ZrSnO4 NPs synthesized at room-temperature deliver the optimized power conversion efficiency up to 16.76%with acceptable stability.This work opens up a new class of ternary metal oxide for the use in ETL of the planar PSCs and should pave the way toward designing new interfacial materials for practical optoelectronic devices.

氧化锆陶瓷低温钎焊接头界面显微结构及性能研究

功能陶瓷的低温连接一直以来都是电子制造领域的难点。采用超声涂覆工艺实现了ZrO_2陶瓷与Sn基焊料的低温连接,并分析了接头的界面连接机理及力学行为。研究结果表明,超声涂覆1 200 s后能在ZrO_2陶瓷表面包覆均匀Sn镀层,并且在Sn/ZrO_2界面形成了ZrSnO_4三元相。ZrSnO_4相的形成与超声空化效应在Sn/ZrO_2界面形成的高温、高压声化学反应环境有关。剪切测试结果表明,ZrO_2/Sn/ZrO_2接头的剪切强度随超声涂覆时间的延长而不断增加,超声涂覆1 200 s时接头的强度达到了32 MPa,剪切失效发生在Sn焊料中。