Conductive n type a Si∶H∶Y alloy films with the conductivity as high as 60 S/cm have been deposited on Si substrate by radio frequency sputtering. In the temperature range 20～300 K, for samples with large Y conte...Conductive n type a Si∶H∶Y alloy films with the conductivity as high as 60 S/cm have been deposited on Si substrate by radio frequency sputtering. In the temperature range 20～300 K, for samples with large Y contents, the thermally activated conduction is also observed and the plots of lg σ vs. 1/ T can be fitted by two linear functions with different slopes. The corresponding temperatures of the kinks between the two straight lines depend on the Y contents in the samples. For small Y content films, the conductivities can be fitted to the funciton σ∝ exp (-1/ T 1/4 ). The present results are interpreted using different conduction mechanisms in different temperature ranges for samples with different Y contents.展开更多
The creep behaviour of β-Si3N4 whisker reinforced Al-8.5Fe-1.3V-1.7Si composite has been investigated at the temperature 773 and 823 K. The results are characterized by high stress exponent and high apparent creep ac...The creep behaviour of β-Si3N4 whisker reinforced Al-8.5Fe-1.3V-1.7Si composite has been investigated at the temperature 773 and 823 K. The results are characterized by high stress exponent and high apparent creep activation energy The creep data can be interpreted based on the incorporation of a threshold Stress and a load transfer coefficient into the power-law creep equation. A good correlation between the normalized creep rate and normalized effective stress is available which demonstrates that the creep behaviour of both the alloy and the composite is controlled by the matrix lattice self-diffusion in AI. EXamination on microstructure shows that edge dislocations exist at the interfaces between two adjacent whiskers and the intedeces emit edge dislocations in parallel paired-columns.展开更多
文摘Conductive n type a Si∶H∶Y alloy films with the conductivity as high as 60 S/cm have been deposited on Si substrate by radio frequency sputtering. In the temperature range 20～300 K, for samples with large Y contents, the thermally activated conduction is also observed and the plots of lg σ vs. 1/ T can be fitted by two linear functions with different slopes. The corresponding temperatures of the kinks between the two straight lines depend on the Y contents in the samples. For small Y content films, the conductivities can be fitted to the funciton σ∝ exp (-1/ T 1/4 ). The present results are interpreted using different conduction mechanisms in different temperature ranges for samples with different Y contents.
文摘The creep behaviour of β-Si3N4 whisker reinforced Al-8.5Fe-1.3V-1.7Si composite has been investigated at the temperature 773 and 823 K. The results are characterized by high stress exponent and high apparent creep activation energy The creep data can be interpreted based on the incorporation of a threshold Stress and a load transfer coefficient into the power-law creep equation. A good correlation between the normalized creep rate and normalized effective stress is available which demonstrates that the creep behaviour of both the alloy and the composite is controlled by the matrix lattice self-diffusion in AI. EXamination on microstructure shows that edge dislocations exist at the interfaces between two adjacent whiskers and the intedeces emit edge dislocations in parallel paired-columns.
