In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination...In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.展开更多
We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge....We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response.展开更多
基金supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707)the Natural Science Foundation of Tianjin City, China (Grant No. 12JCQNJC01000)the Fundamental Research Funds for the Central Universities of China (Grant No. 65012371)
文摘In this paper, a-Si：H/a-SiGe：H/μc-SiGe：H triple-junction solar cell structure is proposed. By the analyses of mi- croelectronic and photonic structures （AMPS-1D） and our TRJ-F/TRJ-M/TRJ-B tunneling-recombination junction （TRJ） model, the most preferably combined bandgap for this structure is found to be 1.85 eV/1.50 eV/1.0 eV. Using more realistic material properties, optimized thickness combination is investigated. Along this direction, a-Si：H/a-SiGe：H/μc-SiGe：H triple cell with an initial efficiency of 12.09% （Voc = 2.03 V, FF = 0.69, Jsc = 8.63 mA/cm^2, area = 1 cm^2） is achieved in our laboratory.
文摘We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response.
