本文中应用全部PECVD工艺沉积a-SiOx:H、a-SiNx:H,和a-SiOx:H/a-SiNx:H叠层系统,比较了不同钝化膜对多晶硅太阳能电池发射极和背面钝化效果,应用FGA、RTP等热处理方法对钝化膜进行处理,重点讨论了FGA(Forming gas annealing)温度和时间...本文中应用全部PECVD工艺沉积a-SiOx:H、a-SiNx:H,和a-SiOx:H/a-SiNx:H叠层系统,比较了不同钝化膜对多晶硅太阳能电池发射极和背面钝化效果,应用FGA、RTP等热处理方法对钝化膜进行处理,重点讨论了FGA(Forming gas annealing)温度和时间的长短对钝化的影响。结果表明:低温FGA对只有单面钝化膜的硅片钝化效果不明显,而在800℃下FGA有明显作用,而且钝化效果随着时间的增加呈现出先增大后减小然后再增大的现象;退火后降温环境中是否有H和降温时间对钝化效果有很大的影响,但是对于双面膜无论FGA温度高低对钝化都有帮助,文中对上述现象做了合理的解释。最后利用双面叠层钝化膜经过FGA处理后得到的多晶硅片的少子寿命达到14.2μs,比镀膜之前的3.0μs提高了11.2μs,使多晶硅太阳能电池暗电压Voc达到630mV。展开更多
This paper reports that amorphous silicon nitride （a-SiNx） overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm a-SiNs overcoat has better anti-corr...This paper reports that amorphous silicon nitride （a-SiNx） overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm a-SiNs overcoat has better anti-corrosion properties than that of reference a-CNx overcoats （2 4.5 nm）. The superior anti-corrosion performance is attributed to its stoichiometric bond structure, where 94.8% Si atoms form Si-N asymmetric stretching vibration bonds. The N/Si ratio is 1.33 as in the stoichiometry of Si3N4 and corresponds to the highest hardness of 25.0 GPa. The surface is atomically smooth with RMS 〈 0.2 nm. The ultra-thin a-SiNx overcoats are promising for hard disks and read/write heads protective coatings.展开更多
文摘本文中应用全部PECVD工艺沉积a-SiOx:H、a-SiNx:H,和a-SiOx:H/a-SiNx:H叠层系统,比较了不同钝化膜对多晶硅太阳能电池发射极和背面钝化效果,应用FGA、RTP等热处理方法对钝化膜进行处理,重点讨论了FGA(Forming gas annealing)温度和时间的长短对钝化的影响。结果表明:低温FGA对只有单面钝化膜的硅片钝化效果不明显,而在800℃下FGA有明显作用,而且钝化效果随着时间的增加呈现出先增大后减小然后再增大的现象;退火后降温环境中是否有H和降温时间对钝化效果有很大的影响,但是对于双面膜无论FGA温度高低对钝化都有帮助,文中对上述现象做了合理的解释。最后利用双面叠层钝化膜经过FGA处理后得到的多晶硅片的少子寿命达到14.2μs,比镀膜之前的3.0μs提高了11.2μs,使多晶硅太阳能电池暗电压Voc达到630mV。
基金Project supported by the Major Program of the National Natural Science Foundation of China (Grant No 50390060)the National Natural Science Foundation of China (Grant Nos 60576022 and 50572012)
文摘This paper reports that amorphous silicon nitride （a-SiNx） overcoats were deposited at room temperature by microwave ECR plasma enhanced unbalanced magnetron sputtering. The 2 nm a-SiNs overcoat has better anti-corrosion properties than that of reference a-CNx overcoats （2 4.5 nm）. The superior anti-corrosion performance is attributed to its stoichiometric bond structure, where 94.8% Si atoms form Si-N asymmetric stretching vibration bonds. The N/Si ratio is 1.33 as in the stoichiometry of Si3N4 and corresponds to the highest hardness of 25.0 GPa. The surface is atomically smooth with RMS 〈 0.2 nm. The ultra-thin a-SiNx overcoats are promising for hard disks and read/write heads protective coatings.
