Heat Transfer and Mode Transition for Laser Ablation Subjected to Supersonic Airflow

When laser ablation is subjected to supersonic flow, the influence mechanism of airflow on laser ablation behavior is still unclear. A coupled thermal-fluid-structure model is presented to investigate the influence of supersonic airflow on the development of a laser ablation pit. Results show that the aerodynamic convection cooling effect not only reduces the ablation velocity but also changes the symmetry morphology of the ablation pit due to the non-uniform convective heat transfer. Flow mode transition is also observed when the pit becomes deeper, and significant change in flow pattern and heat transfer behavior are found when the open mode is transformed into the closed mode.

Specifications of nanosecond laser ablation with solid targets,aluminum,silicon rubber,and polymethylmethacrylate(PMMA)

The ablation parameters such as threshold fluence, etch depth, ablation rate and the effect of material targets were investigated under the interaction of laser pulse with low intensity. The parameters of the laser system are： laser pulse energy in the range of 110–140 m J, wavelength1064 nm and pulse duration 20 ns. By macroscopic estimation of the outward images of the ablation and data obtained, we can conclude that the photothermal and photoionization processes have more influence for aluminum ablation. In contrast, for polymer samples, from the macroscopic observation of the border pattern at the irradiated spot, and also the data obtained from the experiment results, we deduce that both chemical change due to heating and photochemical dissociation were effective mechanisms of ablation. However, concerning the two polymer samples, apart from considering the same theoretical ablation model, it is conceived that the photomehanical specifications of PMMA are involved in the ablation parameters. The threshold fluence for an ablation rate of 30 laser shots were obtained as 12.4, 24.64, and 11.71 J cm^（-2）, for aluminum, silicon rubber and polymethylmethacrylate（PMMA） respectively.The ablation rate is exponentially decreased by the laser-shot number, especially for aluminum.Furthermore, the etch depth after 30 laser shots was measured as 180, 630 and 870 μm, for aluminum, silicon rubber and PMMA, respectively.

Deciphering the Origins of P1-Induced Power Losses in Cu(In_(x),Ga_(1–x))Se2(CIGS)Modules Through Hyperspectral Luminescence

In this report,we show that hyperspectral high-resolution photoluminescence mapping is a powerful tool for the selection and optimiz1ation of the laser ablation processes used for the patterning interconnections of subcells on Cu(Inx,Ga1-x)Se2(CIGS)modules.In this way,we show that in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying mechanisms can be accomplished.Specifically,by analyzing the standard P1 patterning line ablated before the CIGS deposition,we reveal an anomalous emission-quenching effect that follows the edge of the molybdenum groove underneath.We further rationalize the origins of this effect by comparing the topography of the P1 edge through a scanning electron microscope(SEM)cross-section,where a reduction of the photoemission cannot be explained by a thickness variation.We also investigate the laser-induced damage on P1 patterning lines performed after the deposition of CIGS.We then document,for the first time,the existence of a short-range damaged area,which is independent of the application of an optical aperture on the laser path.Our findings pave the way for a better understanding of P1-induced power losses and introduce new insights into the improvement of current strategies for industry-relevant module interconnection schemes.

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy

We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor（Ge and Si） plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity.The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.