Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the conta...Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the contact resistance testing,the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking of the AlGaN layer during RTP,flowing of Ti/Al metallic liquid along the crevices,and continuous reaction of the metallic liquid with AlGaN/GaN. Such processes result in abnormal conduction channels. The possible mechanism of the crevice formation was discussed,and the possible solutions to avoid the crevices were proposed.展开更多
By measuring M-T curves, ρ-T curves and MR-T curves of the samples under different temperatures, the influence of Dy doping （0.00 ≤ x ≤0.30） on the magnetic and electric properties of La0.7-xDyxSr0.3MnO3 has been...By measuring M-T curves, ρ-T curves and MR-T curves of the samples under different temperatures, the influence of Dy doping （0.00 ≤ x ≤0.30） on the magnetic and electric properties of La0.7-xDyxSr0.3MnO3 has been studied. The experimental results show that, with the increase of the Dy content, the system undergoes a transition from long range ferromagnetic order to the cluster-spin glass state and further to antiferromagnetic order. For the samples with x=0.20 and 0.30, their magnetic behaviors are abnormal at low temperature, and their resistivities at low temperature have a minimum value. These peculiar phenomena not only come from the lattice effect induced by doping, but also from extra magnetic coupling induced by doping.展开更多
文摘Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the contact resistance testing,the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking of the AlGaN layer during RTP,flowing of Ti/Al metallic liquid along the crevices,and continuous reaction of the metallic liquid with AlGaN/GaN. Such processes result in abnormal conduction channels. The possible mechanism of the crevice formation was discussed,and the possible solutions to avoid the crevices were proposed.
基金This work was supported by the National Nature Science Foundation of China （No. 19934003） the State Key Project of Fundamental Research of China （No.001CB610604） the Item of Nature Science Research of Anhui （No. 2001kj244）.
文摘By measuring M-T curves, ρ-T curves and MR-T curves of the samples under different temperatures, the influence of Dy doping （0.00 ≤ x ≤0.30） on the magnetic and electric properties of La0.7-xDyxSr0.3MnO3 has been studied. The experimental results show that, with the increase of the Dy content, the system undergoes a transition from long range ferromagnetic order to the cluster-spin glass state and further to antiferromagnetic order. For the samples with x=0.20 and 0.30, their magnetic behaviors are abnormal at low temperature, and their resistivities at low temperature have a minimum value. These peculiar phenomena not only come from the lattice effect induced by doping, but also from extra magnetic coupling induced by doping.
