Effect of AIBI as Free Radical Initiator on Abrasive-Free Polishing of Hard Disk Substrate

To optimize the existing slurry for abrasive-free polishing(AFP)of hard disk substrate,a water-soluble free radical initiator,2,2-azobis[2-(2-imidazolin-2-yl)propane]dihydrochloride(AIBI)is introduced to the H2O2-based slurry.The polishing results show that,the material removal rate(MRR)of hard disk substrate polished with H2O2-based slurry containing AIBI is obviously higher than that without AIBI.The acting mechanism of the improved MRR is investigated.Electron paramagnetic resonances tests show that,by comparison with H2O2 slurry,H2O2-AIBI slurry provides higher concentration of hydroxyl radicals.Auger electron spectrometer analyses further demonstrate that the oxidation ability of H2O2-AIBI slurry is much greater than H2O2 slurry.In addition,potentiodynamic polarization tests show that the corrosion dissolution rate of hard disk substrate in H2O2-AIBI slurry is increased.Therefore that stronger oxidation ability and a higher corrosion dissolution rate of H2O2-AIBI slurry lead to higher MRR can be concluded.

Abrasive-free polishing of hard disk substrate with H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry

The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing results show that the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry exhibits a material removal rate(MRR)that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate.In addition,the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry.Further,we investigate the polishing mechanism of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry.Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry is much greater than that of the H2O2 slurry.The results of potentiodynamic polarization measurements show that the hard disk substrate in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry can be rapidly etched,and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry may be loose,and can be removed easily during polishing.The better oxidizing and etching ability of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry leads to a higher MRR in AFP for hard disk substrates.