To optimize the existing slurry for abrasive-free polishing(AFP)of hard disk substrate,a water-soluble free radical initiator,2,2-azobis[2-(2-imidazolin-2-yl)propane]dihydrochloride(AIBI)is introduced to the H2O2-base...To optimize the existing slurry for abrasive-free polishing(AFP)of hard disk substrate,a water-soluble free radical initiator,2,2-azobis[2-(2-imidazolin-2-yl)propane]dihydrochloride(AIBI)is introduced to the H2O2-based slurry.The polishing results show that,the material removal rate(MRR)of hard disk substrate polished with H2O2-based slurry containing AIBI is obviously higher than that without AIBI.The acting mechanism of the improved MRR is investigated.Electron paramagnetic resonances tests show that,by comparison with H2O2 slurry,H2O2-AIBI slurry provides higher concentration of hydroxyl radicals.Auger electron spectrometer analyses further demonstrate that the oxidation ability of H2O2-AIBI slurry is much greater than H2O2 slurry.In addition,potentiodynamic polarization tests show that the corrosion dissolution rate of hard disk substrate in H2O2-AIBI slurry is increased.Therefore that stronger oxidation ability and a higher corrosion dissolution rate of H2O2-AIBI slurry lead to higher MRR can be concluded.展开更多
The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing resu...The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing results show that the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry exhibits a material removal rate(MRR)that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate.In addition,the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry.Further,we investigate the polishing mechanism of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry.Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry is much greater than that of the H2O2 slurry.The results of potentiodynamic polarization measurements show that the hard disk substrate in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry can be rapidly etched,and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry may be loose,and can be removed easily during polishing.The better oxidizing and etching ability of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry leads to a higher MRR in AFP for hard disk substrates.展开更多
基金Project supported by the National Natural Science Foundation of China(51175317)the Doctoral Program of Higher Education of China(20123108110016)
文摘To optimize the existing slurry for abrasive-free polishing(AFP)of hard disk substrate,a water-soluble free radical initiator,2,2-azobis[2-(2-imidazolin-2-yl)propane]dihydrochloride(AIBI)is introduced to the H2O2-based slurry.The polishing results show that,the material removal rate(MRR)of hard disk substrate polished with H2O2-based slurry containing AIBI is obviously higher than that without AIBI.The acting mechanism of the improved MRR is investigated.Electron paramagnetic resonances tests show that,by comparison with H2O2 slurry,H2O2-AIBI slurry provides higher concentration of hydroxyl radicals.Auger electron spectrometer analyses further demonstrate that the oxidation ability of H2O2-AIBI slurry is much greater than H2O2 slurry.In addition,potentiodynamic polarization tests show that the corrosion dissolution rate of hard disk substrate in H2O2-AIBI slurry is increased.Therefore that stronger oxidation ability and a higher corrosion dissolution rate of H2O2-AIBI slurry lead to higher MRR can be concluded.
基金supported by the National Natural Science Foundation of China(Grant No.51175317)Research Fund for the Doctoral Program of Higher Education of China(Grant No.20123108110016)Tribology Science Fund of State Key Laboratory of Tribology(No.SKLTKF11B06).
文摘The effect of tert-butyl hydroperoxide-sodium pyrosulfite((CH3)3COOH-Na2S2O5)as an initiator system in H2O2-based slurry was investigated for the abrasive-free polishing(AFP)of a hard disk substrate.The polishing results show that the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry exhibits a material removal rate(MRR)that is nearly 5 times higher than that of the H2O2 slurry in the AFP of the hard disk substrate.In addition,the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H2O2 slurry.Further,we investigate the polishing mechanism of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry.Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry is much greater than that of the H2O2 slurry.The results of potentiodynamic polarization measurements show that the hard disk substrate in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry can be rapidly etched,and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry may be loose,and can be removed easily during polishing.The better oxidizing and etching ability of H_(2)O_(2)-C_(4)H_(10)O_(2)-Na_(2)S_(2)O_(5) slurry leads to a higher MRR in AFP for hard disk substrates.