As few or no failures occur during accelerated life test,it is difficult to assess reliability for long-life products with traditional life tests.Reliability assessment using degradation data of product performance ov...As few or no failures occur during accelerated life test,it is difficult to assess reliability for long-life products with traditional life tests.Reliability assessment using degradation data of product performance over time becomes a significant approach.Aerospace electrical connector is researched in this paper.Through the analysis of failure mechanism,the performance degradation law is obtained and the statistical model for degradation failure is set up; according to the research on statistical analysis methods for degradation data,accelerated life test theory and method for aerospace electrical connector based on performance degradation is proposed by improving time series analysis method,and the storage reliability is assessed for Y11X series of aerospace electrical connector with degradation data from accelerated degradation test.The result obtained is basically consistent with that obtained from accelerated life test based on failure data,and the two estimates of product＇s characteristic life only have a difference of 8.7%,but the test time shortens about a half.As a result,a systemic approach is proposed for reliability assessment of highly reliable and long-life aerospace product.展开更多
In order to get a rapid assessment on the storage reliability of high-reliable and long-life products within the storage period, accelerated degradation test data with a large amount of reliability information of prod...In order to get a rapid assessment on the storage reliability of high-reliable and long-life products within the storage period, accelerated degradation test data with a large amount of reliability information of product is adopted. Conducting a constant-stress accelerated degradation test（CSADT） is generally very costly as it requires a large sample size and long time for test. To overcome this problem, it is necessary to carry out research on modeling and statistical analysis methods of step-stress accelerated degradation test （SSADT）. Taking electrical connectors as the object, a research is conducted on statistical model and assessment method for SSADT. On the basis of mixed-effect degradation path model, the statistical model of SSADT for electrical connectors is presented, the maximum likelihood method for SSADT data based on mixed-effect degradation model is proposed. SSADT accelerated by temperature stress is conducted to Y11X-1419 type of electrical connectors, and the storage reliability is assessed with the SSADT data. Compared with the result obtained from accelerated life test, the reliability estimation of 32-year storage period for electrical connectors obtained from S SADT data only have a difference of 0.869%, which validates the accuracy of the degradation model and the feasibility of the test data statistic analysis method put forward.展开更多
NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperatur...NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperature-humidity constant stresses, the failure sensitive parameters of transistors are identified and the lifetime of samples is extrapolated from the performance degradation data. Average lifetimes in three common distributions are given, when, combined with the Hallberg-Peck temperature-humidity model, the storage lifetime of transistor samples in the natural storage condition is extrapolated between 105-10^7 h. According to its definition, the accelerating factor is 1462 in 100 ℃/100% relative humidity （RH） stress condition, and 25 ℃/25% RH stress con- dition. Finally, the degradation causes of performance parameters of the test samples are analyzed. The findings can provide certain references for the storage reliability of domestic transistors.展开更多
基金supported by National Natural Science Foundation of China (Grant No. 50935002,Grant No. 51075370,Grant No. 51105341)National Hi-tech Research and Development Program of China (863 Program,Grant No. 2007AA04Z409)Civil Aerospace Science and Technology Pre-research Project of China (Grant No. B122006 2302)
文摘As few or no failures occur during accelerated life test,it is difficult to assess reliability for long-life products with traditional life tests.Reliability assessment using degradation data of product performance over time becomes a significant approach.Aerospace electrical connector is researched in this paper.Through the analysis of failure mechanism,the performance degradation law is obtained and the statistical model for degradation failure is set up; according to the research on statistical analysis methods for degradation data,accelerated life test theory and method for aerospace electrical connector based on performance degradation is proposed by improving time series analysis method,and the storage reliability is assessed for Y11X series of aerospace electrical connector with degradation data from accelerated degradation test.The result obtained is basically consistent with that obtained from accelerated life test based on failure data,and the two estimates of product＇s characteristic life only have a difference of 8.7%,but the test time shortens about a half.As a result,a systemic approach is proposed for reliability assessment of highly reliable and long-life aerospace product.
基金supported by National Natural Science Foundation of China(Grant Nos.50935002,51075370,51105341,51275480)Zhejiang Provincial Natural Science Foundation of China(Grant No.Y1100777)Zhejiang Provincial Key Scientific and Technological Innovation Team(Grant No.2010R50005)
文摘In order to get a rapid assessment on the storage reliability of high-reliable and long-life products within the storage period, accelerated degradation test data with a large amount of reliability information of product is adopted. Conducting a constant-stress accelerated degradation test（CSADT） is generally very costly as it requires a large sample size and long time for test. To overcome this problem, it is necessary to carry out research on modeling and statistical analysis methods of step-stress accelerated degradation test （SSADT）. Taking electrical connectors as the object, a research is conducted on statistical model and assessment method for SSADT. On the basis of mixed-effect degradation path model, the statistical model of SSADT for electrical connectors is presented, the maximum likelihood method for SSADT data based on mixed-effect degradation model is proposed. SSADT accelerated by temperature stress is conducted to Y11X-1419 type of electrical connectors, and the storage reliability is assessed with the SSADT data. Compared with the result obtained from accelerated life test, the reliability estimation of 32-year storage period for electrical connectors obtained from S SADT data only have a difference of 0.869%, which validates the accuracy of the degradation model and the feasibility of the test data statistic analysis method put forward.
文摘NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperature-humidity constant stresses, the failure sensitive parameters of transistors are identified and the lifetime of samples is extrapolated from the performance degradation data. Average lifetimes in three common distributions are given, when, combined with the Hallberg-Peck temperature-humidity model, the storage lifetime of transistor samples in the natural storage condition is extrapolated between 105-10^7 h. According to its definition, the accelerating factor is 1462 in 100 ℃/100% relative humidity （RH） stress condition, and 25 ℃/25% RH stress con- dition. Finally, the degradation causes of performance parameters of the test samples are analyzed. The findings can provide certain references for the storage reliability of domestic transistors.
