A new design solution of data access layer for N-tier architecture is presented. It can solve the problems such as low efficiency of development and difficulties in transplantation, update and reuse. The solution util...A new design solution of data access layer for N-tier architecture is presented. It can solve the problems such as low efficiency of development and difficulties in transplantation, update and reuse. The solution utilizes the reflection technology of .NET and design pattern. A typical application of the solution demonstrates that the new solution of data access layer performs better than the current N-tier architecture. More importantly, the application suggests that the new solution of data access layer can be reused effectively.展开更多
An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell ...An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.展开更多
As an industry accepted storage scheme, hafnium oxide（HfO_x） based resistive random access memory（RRAM）should further improve its thermal stability and data retention for practical applications. We therefore fabri...As an industry accepted storage scheme, hafnium oxide（HfO_x） based resistive random access memory（RRAM）should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current（〈 3 μA） with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures（up to 180℃）, which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs.展开更多
The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching...The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state （LRS） and Schottky emission in the high resistive state （HRS）, while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.展开更多
With the rapid development of the Internet of Things (IoT), non-Orthogonal Multiple Access (NOMA) technology and cognitive wireless network are two promising technologies to improve the spectral efficiency of the syst...With the rapid development of the Internet of Things (IoT), non-Orthogonal Multiple Access (NOMA) technology and cognitive wireless network are two promising technologies to improve the spectral efficiency of the system, which have been widely concerned in the field of wireless communication. However, due to the importance of ownership and privacy protection, the IoT system must provide corresponding security mechanisms. From the perspective of improving the transmission security of CR-NOMA system based on cognitive wireless network, and considering the shortcomings of traditional relay cooperative NOMA system, this paper mainly analyzes the eavesdropping channel model of multi-user CR-NOMA system and derives the expressions of system security and rate to improve the security performance of CR-NOMA system. The basic idea of DC planning algorithm and the scheme of sub-carrier power allocation to improve the transmission security of the system were introduced. An algorithm for DC-CR-NOMA was proposed to maximize the SSR of the system and minimize the energy loss. The simulation results show that under the same complexity, the security and speed of the system can be greatly improved compared with the traditional scheme.展开更多
TCP performance degrades when end-to-end connections extend over wireless links which are characterized by high Bit Error Rate and intermittent connectivity. Such degradation is mainly accounted for TCP’s unnecessary...TCP performance degrades when end-to-end connections extend over wireless links which are characterized by high Bit Error Rate and intermittent connectivity. Such degradation is mainly accounted for TCP’s unnecessary congestion control actions while attempting TCP loss recovery. Several independent link loss recovery approaches are proposed by researchers to reduce number of losses visible at TCP. In this paper we first presented a survey of loss mitigation techniques at wireless link layer. Secondly performance evaluation for TCP through Type 0 Automatic Retransmission Request mechanism in erroneous Wireless LAN is presented. In particular, simulations are performed taking into account the wireless errors introduced over IEEE 802.11 link using a well-established 2-State Markov model. TCP performance is evaluated under different settings for maximum link retransmissions allowed for each frame. Simulation results show that, link retransmission improves TCP performance by reducing losses perceived at TCP sender. However, such improvement is often associated with adverse effect on other TCP parameters that may cost a lot in return under extreme network conditions. In this paper an attempt is made to observe impact of link retransmissions on the performance of multiple TCP flows competing with each other. The analysis presented in this paper signifies the scope for maximizing TCP’s throughput at the least possible cost.展开更多
为了探求影响电力通信系统数据安全传输的关键因素,构建基于解码转发(decode-and-forward,DF)中继和非正交多址接入(non-orthogonal multiple access,NOMA)技术辅助的电力线通信(power line communication,PLC)系统,并研究其安全传输性...为了探求影响电力通信系统数据安全传输的关键因素,构建基于解码转发(decode-and-forward,DF)中继和非正交多址接入(non-orthogonal multiple access,NOMA)技术辅助的电力线通信(power line communication,PLC)系统,并研究其安全传输性能.针对外部窃听和内部窃听两种情况,联合考虑背景噪声和脉冲噪声的影响,分析系统的可达速率、遍历安全速率和安全中断概率等性能,并利用高斯-切比雪夫求积方法获得其相应的闭合表达式.结果表明:较高的脉冲噪声会降低系统的频谱效率和安全传输性能;功率分配系数以及源用户到中继用户的距离均对系统安全传输产生显著影响.进一步地,通过蒙特卡罗仿真实验验证了理论分析的正确性.展开更多
基金the Foundation for Key Teachers of Chongqing University (200209055).
文摘A new design solution of data access layer for N-tier architecture is presented. It can solve the problems such as low efficiency of development and difficulties in transplantation, update and reuse. The solution utilizes the reflection technology of .NET and design pattern. A typical application of the solution demonstrates that the new solution of data access layer performs better than the current N-tier architecture. More importantly, the application suggests that the new solution of data access layer can be reused effectively.
基金Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No XDA09020402the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003+1 种基金the National Natural Science Foundation of China under Grant Nos 61261160500,61376006,61401444 and 61504157the Science and Technology Council of Shanghai under Grant Nos 14DZ2294900,15DZ2270900 and 14ZR1447500
文摘An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.
基金supported by the National Natural Science Foundation of China(Grant Nos.61006003 and 61674038)the Natural Science Foundation of Fujian Province,China(Grant Nos.2015J01249 and 2010J05134)+1 种基金the Science Foundation of Fujian Education Department of China(Grant No.JAT160073)the Science Foundation of Fujian Provincial Economic and Information Technology Commission of China(Grant No.83016006)
文摘As an industry accepted storage scheme, hafnium oxide（HfO_x） based resistive random access memory（RRAM）should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current（〈 3 μA） with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures（up to 180℃）, which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017yfb0405600)the National Natural Science Foundation of China(Grant Nos.61404091,61274113,61505144,51502203,and 51502204)the Natural Science Foundation of Tianjin City(Grant Nos.17JCYBJC16100 and 17JCZDJC31700)
文摘The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory （TRRAM） device were investigated in this paper. The bipolar resistive switching behavior of a single ZnO film and bilayer HfOx/ZnO films as active layers for TRRAM devices was demonstrated. It was revealed that the bilayer TRRAM device with a 10-nm HfOx inserted layer had a more stable resistive switching behavior than other devices including the single layer device, as well as being forming free, and the transmittance was more than 80% in the visible region. For the HfOx/ZnO devices, the current conduction behavior was dominated by the space-charge-limited current mechanism in the low resistive state （LRS） and Schottky emission in the high resistive state （HRS）, while the mechanism for single layer devices was controlled by ohmic conduction in the LRS and Poole-Frenkel emission in the HRS.
文摘With the rapid development of the Internet of Things (IoT), non-Orthogonal Multiple Access (NOMA) technology and cognitive wireless network are two promising technologies to improve the spectral efficiency of the system, which have been widely concerned in the field of wireless communication. However, due to the importance of ownership and privacy protection, the IoT system must provide corresponding security mechanisms. From the perspective of improving the transmission security of CR-NOMA system based on cognitive wireless network, and considering the shortcomings of traditional relay cooperative NOMA system, this paper mainly analyzes the eavesdropping channel model of multi-user CR-NOMA system and derives the expressions of system security and rate to improve the security performance of CR-NOMA system. The basic idea of DC planning algorithm and the scheme of sub-carrier power allocation to improve the transmission security of the system were introduced. An algorithm for DC-CR-NOMA was proposed to maximize the SSR of the system and minimize the energy loss. The simulation results show that under the same complexity, the security and speed of the system can be greatly improved compared with the traditional scheme.
文摘TCP performance degrades when end-to-end connections extend over wireless links which are characterized by high Bit Error Rate and intermittent connectivity. Such degradation is mainly accounted for TCP’s unnecessary congestion control actions while attempting TCP loss recovery. Several independent link loss recovery approaches are proposed by researchers to reduce number of losses visible at TCP. In this paper we first presented a survey of loss mitigation techniques at wireless link layer. Secondly performance evaluation for TCP through Type 0 Automatic Retransmission Request mechanism in erroneous Wireless LAN is presented. In particular, simulations are performed taking into account the wireless errors introduced over IEEE 802.11 link using a well-established 2-State Markov model. TCP performance is evaluated under different settings for maximum link retransmissions allowed for each frame. Simulation results show that, link retransmission improves TCP performance by reducing losses perceived at TCP sender. However, such improvement is often associated with adverse effect on other TCP parameters that may cost a lot in return under extreme network conditions. In this paper an attempt is made to observe impact of link retransmissions on the performance of multiple TCP flows competing with each other. The analysis presented in this paper signifies the scope for maximizing TCP’s throughput at the least possible cost.
文摘为了探求影响电力通信系统数据安全传输的关键因素,构建基于解码转发(decode-and-forward,DF)中继和非正交多址接入(non-orthogonal multiple access,NOMA)技术辅助的电力线通信(power line communication,PLC)系统,并研究其安全传输性能.针对外部窃听和内部窃听两种情况,联合考虑背景噪声和脉冲噪声的影响,分析系统的可达速率、遍历安全速率和安全中断概率等性能,并利用高斯-切比雪夫求积方法获得其相应的闭合表达式.结果表明:较高的脉冲噪声会降低系统的频谱效率和安全传输性能;功率分配系数以及源用户到中继用户的距离均对系统安全传输产生显著影响.进一步地,通过蒙特卡罗仿真实验验证了理论分析的正确性.
