To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by depl...To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by deploying a large number of Access Points(APs)in the service area.However,since the energy consumption of APs generally accounts for a substantial part of the communication system,how to deal with the consequent energy issue is a challenging task for a mobile network with densely deployed APs.In this paper,we propose an intelligent AP switching on/off scheme to reduce the system energy consumption with the prerequisite of guaranteeing the quality of service,where the signaling overhead is also taken into consideration to ensure the stability of the network.First,based on historical traffic data,a long short-term memory method is introduced to predict the future traffic distribution,by which we can roughly determine when the AP switching operation should be triggered;second,we present an efficient three-step AP selection strategy to determine which of the APs would be switched on or off;third,an AP switching scheme with a threshold is proposed to adjust the switching frequency so as to improve the stability of the system.Experiment results indicate that our proposed traffic forecasting method performs well in practical scenarios,where the normalized root mean square error is within 10%.Furthermore,the achieved energy-saving is more than 28% on average with a reasonable outage probability and switching frequency for an area served by 40 APs in a commercial mobile network.展开更多
Memory access fast switching structures in cluster are studied,and three kinds of fast switching structures（ FS,LR2 SS,and LAPS） are proposed. A mixed simulation test bench is constructed and used for statistic of d...Memory access fast switching structures in cluster are studied,and three kinds of fast switching structures（ FS,LR2 SS,and LAPS） are proposed. A mixed simulation test bench is constructed and used for statistic of data access delay among these three structures in various cases. Finally these structures are realized on Xilinx FPGA development board and DCT,FFT,SAD,IME,FME,and de-blocking filtering algorithms are mapped onto the structures. Compared with available architectures,our proposed structures have lower data access delay and lower area.展开更多
With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
In this paper, an Independent Window-Access(IWA) scheme is proposed, and the performance of an input-buffered ATM switching fabric with the IWA scheme is analysed by means of a probability generating function approach...In this paper, an Independent Window-Access(IWA) scheme is proposed, and the performance of an input-buffered ATM switching fabric with the IWA scheme is analysed by means of a probability generating function approach, the closed formulas of the average cell delay and the maximum throughput are given, and results show that the IWA scheme makes the switching fabric have better performances than traditional window-access scheme. The computer simulation results are in good agreement with these analytical results.展开更多
Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of swit...Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.展开更多
随着中小企业(Small and Midium-sized Business,SMB)接入交换机市场规模的扩大,行业标准接入交换机已难以满足客户对低价格、高质量、高易用性的要求。本文根据运用场景制定质量策略,通过电路重构、设计精简、去除过设计和功能重定义...随着中小企业(Small and Midium-sized Business,SMB)接入交换机市场规模的扩大,行业标准接入交换机已难以满足客户对低价格、高质量、高易用性的要求。本文根据运用场景制定质量策略,通过电路重构、设计精简、去除过设计和功能重定义等方法降低成本,通过产品使用旅程挖掘易用性痛点,完成了对SMB接入交换机的质量提高、成本降低和易用性改善的目标,在高质量、高易用的前提下实现了低价格。展开更多
In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room tempe...In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.展开更多
In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductiv...In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.展开更多
We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stab...We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.展开更多
We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro...We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.展开更多
The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light...The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.展开更多
In this paper we present the performance analysis of a novel channel assignment scheme where two non-cooperative independent users simultaneously communicate with their destination through a single relay by using only...In this paper we present the performance analysis of a novel channel assignment scheme where two non-cooperative independent users simultaneously communicate with their destination through a single relay by using only two frequency channels. The analytic derivation of the probability of symbol error for two main relay techniques will be provided, namely Amplify-and-Forward (AF) and Decode-and-Forward (DF). As shown by the obtained results, our switched-frequency approach results in a model that can achieve full- diversity by means of maximum-likelihood decoding at the receiver. Our results are especially important in the DF case, since in traditional techniques (such as half-duplex two-time slot approaches) two sources si-multaneously transmit on the same channel through the first time slot, which necessitates some sort of su-perposition coding. However, since in our scheme both users transmit over orthogonal channels, such a coding scheme is not required. In addition, it is shown that the DF approach based on our novel channel assign-ment scheme outperforms the AF scheme, especially in scenarios where the relay is closer to the receiver.展开更多
基金partially supported by the National Natural Science Foundation of China under Grants 61801208,61931023,and U1936202.
文摘To meet the ever-increasing traffic demand and enhance the coverage of cellular networks,network densification is one of the crucial paradigms of 5G and beyond mobile networks,which can improve system capacity by deploying a large number of Access Points(APs)in the service area.However,since the energy consumption of APs generally accounts for a substantial part of the communication system,how to deal with the consequent energy issue is a challenging task for a mobile network with densely deployed APs.In this paper,we propose an intelligent AP switching on/off scheme to reduce the system energy consumption with the prerequisite of guaranteeing the quality of service,where the signaling overhead is also taken into consideration to ensure the stability of the network.First,based on historical traffic data,a long short-term memory method is introduced to predict the future traffic distribution,by which we can roughly determine when the AP switching operation should be triggered;second,we present an efficient three-step AP selection strategy to determine which of the APs would be switched on or off;third,an AP switching scheme with a threshold is proposed to adjust the switching frequency so as to improve the stability of the system.Experiment results indicate that our proposed traffic forecasting method performs well in practical scenarios,where the normalized root mean square error is within 10%.Furthermore,the achieved energy-saving is more than 28% on average with a reasonable outage probability and switching frequency for an area served by 40 APs in a commercial mobile network.
基金Supported by the National Natural Science Foundation of China(61272120,61634004,61602377)the Shaanxi Provincial Co-ordination Innovation Project of Science and Technology(2016KTZDGY02-04-02)Scientific Research Program Funded by Shannxi Provincial Education Department(17JK0689)
文摘Memory access fast switching structures in cluster are studied,and three kinds of fast switching structures（ FS,LR2 SS,and LAPS） are proposed. A mixed simulation test bench is constructed and used for statistic of data access delay among these three structures in various cases. Finally these structures are realized on Xilinx FPGA development board and DCT,FFT,SAD,IME,FME,and de-blocking filtering algorithms are mapped onto the structures. Compared with available architectures,our proposed structures have lower data access delay and lower area.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
文摘In this paper, an Independent Window-Access(IWA) scheme is proposed, and the performance of an input-buffered ATM switching fabric with the IWA scheme is analysed by means of a probability generating function approach, the closed formulas of the average cell delay and the maximum throughput are given, and results show that the IWA scheme makes the switching fabric have better performances than traditional window-access scheme. The computer simulation results are in good agreement with these analytical results.
基金Supported by the National Natural Science Foundation of China under Grant No 51202196the National Aerospace Science Foundation of China under Grant No 2013ZF53067+2 种基金the Natural Science Basic Research Plan in Shaanxi Province of China under Grant No 2014JQ6204the Fundamental Research Funds for the Central Universities under Grant No 3102014JCQ01032the 111 Project under Grant No B08040
文摘Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.
文摘随着中小企业(Small and Midium-sized Business,SMB)接入交换机市场规模的扩大,行业标准接入交换机已难以满足客户对低价格、高质量、高易用性的要求。本文根据运用场景制定质量策略,通过电路重构、设计精简、去除过设计和功能重定义等方法降低成本,通过产品使用旅程挖掘易用性痛点,完成了对SMB接入交换机的质量提高、成本降低和易用性改善的目标,在高质量、高易用的前提下实现了低价格。
基金Project supported by the National Basic Research Program of China(Grant Nos.2008CB925002 and 2010CB934200)the National Natural Science Foundation of China(Grant Nos.60825403 and 50972160)the National High Technology Research and Development Program of China(Grant No.2009AA03Z306)
文摘In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.
基金supported by the National Basic Research Program of China(Grant No.2011CBA00606)the National Natural Science Foundation of China(Grant Nos.61106106,11304237,61376099,and 11235008)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant Nos.20130203130002 and 20110203110012)
文摘In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.
基金Project supported by the National Basic Research Program of China (Grant No. 2007CB925002)the National High Technology Research and Development Program of China (Grant No. 2008AA031401)and Chinese Academy of Sciences
文摘We report that fully transparent resistive random access memory （TRRAM） devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region （400 800 nm in wavelength） the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the filament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
基金Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064)the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055,61274113,and 11204212)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029)Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700)
文摘We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11174135 and 60976016)the National 973 Project,China(Gant No.0213117005)+3 种基金the State Key Program for Basic Research of China(Grant No.2010CB630704)the Science Foundation of Henan Province,China(Grant No.14A430020)the Science Foundation of Henan University,China(Grant No.SBGJ090503)China Postdoctoral Science Foundation(Grant No.2012M511250)
文摘The fully transparent indium-tin-oxide/BaSnO3/F-doped SnO2 devices that show a stable bipolar resistance switching effect are successfully fabricated. In addition to the transmittance being above 87% for visible light, an initial forming process is unnecessary for the production of transparent memory. Fittings to the current-voltage curves reveal the interfacial conduction in the devices. The first-principles calculation indicates that the oxygen vacancies in cubic BaSnO3 will form the defective energy level below the bottom of conduction band. The field-induced resistance change can be explained based on the change of the interracial Schottky barrier, due to the migration of oxygen vacancies in the vicinity of the interface. This work presents a candidate material BaSnO3 for the application of resistive random access memory to transparent electronics.
文摘In this paper we present the performance analysis of a novel channel assignment scheme where two non-cooperative independent users simultaneously communicate with their destination through a single relay by using only two frequency channels. The analytic derivation of the probability of symbol error for two main relay techniques will be provided, namely Amplify-and-Forward (AF) and Decode-and-Forward (DF). As shown by the obtained results, our switched-frequency approach results in a model that can achieve full- diversity by means of maximum-likelihood decoding at the receiver. Our results are especially important in the DF case, since in traditional techniques (such as half-duplex two-time slot approaches) two sources si-multaneously transmit on the same channel through the first time slot, which necessitates some sort of su-perposition coding. However, since in our scheme both users transmit over orthogonal channels, such a coding scheme is not required. In addition, it is shown that the DF approach based on our novel channel assign-ment scheme outperforms the AF scheme, especially in scenarios where the relay is closer to the receiver.
