Thin-film accumulation-mode SOI pMOSFETs are fabricated and investigated.Their characteristics are compared with those of thin-film inversion-mode pMOSFETs.The subthreshold slope is 69mV/decade,and it almost has no DI...Thin-film accumulation-mode SOI pMOSFETs are fabricated and investigated.Their characteristics are compared with those of thin-film inversion-mode pMOSFETs.The subthreshold slope is 69mV/decade,and it almost has no DIBL effect.The breakdown voltage is 10.5V,which is increased by 40% relative to thin-film inversion-mode pMOSFET.The saturation current is 130μA/μm,which is enhanced by 27% compared with inversion-mode pMOSFET.The per-stage propagation delay of 101-stage SOI CMOS ring oscillator is 56ps with 3V supply voltage.展开更多
The characteristics of N-type accumulation-mode MOS (NMOS) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping. The problem of wide pulse br...The characteristics of N-type accumulation-mode MOS (NMOS) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping. The problem of wide pulse breaking up into multiple pulses rather than a single is solved. Applying perturbative analysis, we show that the dynamics of the nonlinear transmission line (NLTL) is reduced to expanded Korteweg-de Vries (KdV) equation. Moreover, numerical integration of nonlinear differential and difference equations that result from the mathematical analysis of the line is discussed. As results, NLTL can simultaneously sharpen both leading and trailing of pulse edges and one could obtain a rising and sharpening step pulse.展开更多
文摘Thin-film accumulation-mode SOI pMOSFETs are fabricated and investigated.Their characteristics are compared with those of thin-film inversion-mode pMOSFETs.The subthreshold slope is 69mV/decade,and it almost has no DIBL effect.The breakdown voltage is 10.5V,which is increased by 40% relative to thin-film inversion-mode pMOSFET.The saturation current is 130μA/μm,which is enhanced by 27% compared with inversion-mode pMOSFET.The per-stage propagation delay of 101-stage SOI CMOS ring oscillator is 56ps with 3V supply voltage.
文摘The characteristics of N-type accumulation-mode MOS (NMOS) varactors line periodically loaded with resonant tunneling diodes (RTDs) are used for soliton-like pulses generation and shaping. The problem of wide pulse breaking up into multiple pulses rather than a single is solved. Applying perturbative analysis, we show that the dynamics of the nonlinear transmission line (NLTL) is reduced to expanded Korteweg-de Vries (KdV) equation. Moreover, numerical integration of nonlinear differential and difference equations that result from the mathematical analysis of the line is discussed. As results, NLTL can simultaneously sharpen both leading and trailing of pulse edges and one could obtain a rising and sharpening step pulse.
