Novel One-component Positive-tone Chemically Amplified I-Line Molecular Glass Photoresist Based on Tannic Acid

Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoaetive compound was obtained by the esterification of tannic acid with 2-diazo-1- naphthoquinone-4-sulfonyl chloride（2,1,4-DNQ-Cl） and ditertbutyl dicarbonate. The new obtained compound pos- sessed both a photosensitive group of diazonaphthoquinone sulfonate（2,1,4-DNQ） and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The expe- rimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.

酸增殖剂的合成及其应用原理

综述了酸增殖剂研究新进展 ,重点介绍了几种有应用前景的酸增殖剂及其反应机理 .讨论了酸增殖剂在化学增幅型抗蚀剂体系、UV紫外光固化材料、CTP制版中的应用 .

面向21世纪的酸增殖辐射固化与成像技术

介绍了市村国宏教授率先在 20世纪 90年代末期提出的酸增殖 (Acid proliferation)、酸增殖源、酸增殖型光致抗蚀剂等新概念，列出了几种有用的酸增殖源及它们酸致产酸发生增殖反应的机理，讨论了酸增殖源在光致抗蚀剂 (特别是化学增幅抗蚀剂 )和计算机直接制版 (CTP)技术等方面的应用，说明这是一项在 21世纪有发展前景的成像技术——信息记录技术。

DUV光致抗蚀剂的研究进展(Ⅰ)——主体成膜高分子部分

综述了近十年来DUV抗蚀剂体系的进展 ,特别对DUV区化学增幅抗蚀剂的矩阵树脂、产酸源、阻溶剂作了详细的阐述。并指出 ,通过改进感光高分子的结构与组成 。

酸增殖剂及其应用

基于自催化酸解反应的酸增殖是新的提高成像灵敏度的方法。目前发现有实用价值的酸增殖剂绝大多数为磺酸酯类化合物。本文详细介绍了酸增殖机理和酸增殖剂的种类,比较了2-甲基-2-(对甲苯磺酰氧甲基)-3-酮-丁酸叔丁酯、环己二醇二甲苯磺酸酯、三聚羟基丙醛三对甲苯磺酸酯在化学增幅抗蚀剂体系中的应用性能,认为环己二醇二碳酸酯的灵敏度高,更具有实用价值。